Getter deposition for vacuum packaging

• US 20050253283A1
• Filed: 09/02/2004
• Published: 11/17/2005
• Est. Priority Date: 05/13/2004
• Status: Abandoned Application

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Glenn, Max. C., DCamp, Jon B., Curtis, Harlan L., Koland, Lisa P.
• Application Number:
  US10/932,906
• Publication Number:
  US 20050253283A1
• Time in Patent Office: Days
• US Class Current: 257/787
• CPC Class Codes: B65D 81/2038 with means for establishing or improving vacuum
• CPC Class Codes: B65D 85/38 for delicate optical, measuring, calculating or control apparatus
• CPC Class Codes: B81B 7/0038 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters

Abstract

A device package that includes a thin film getter that is deposited on an inside surfaces of a device receiving vacuum sealed cavity or chamber. The thin film getter is deposited using, for example, sputtering, resistive evaporation, e-beam evaporation, or any other suitable deposition technique.

Claims

1. A package for a device, comprising:

one or more walls defining a device cavity; and

a getter deposited directly on one or more of the walls.

2. The package of claim 1, wherein the package includes a package housing and a package lid, and the one or more walls includes an inner surface of a package lid.

3. The package of claim 1, wherein the package includes a package housing that has a number of walls that define a device receiving cavity, the package further having a package lid for sealing the device receiving cavity, the getter deposited on one or more of the walls of the package housing.

4. The package of claim 3 wherein the one or more walls of the package housing include a bottom wall and side walls.

5. The package of claim 4 wherein the getter is deposited on at least part of the bottom wall.

6. The package of claim 4 wherein the getter is deposited on at least part of at least one of the side walls.

7. The package of claim 1 wherein the getter is deposited by sputtering.

8. The package of claim 1 wherein the getter is deposited by evaporation

9. The package of claim 8 wherein the getter is deposited by resistive evaporation

10. The package of claim 8 wherein the getter is deposited by e-beam evaporation.

11. The package of claim 1 wherein the getter is deposited by vapor deposition.

12. The package of claim 1 wherein the getter is deposited by atomic layer deposition.

13. The package of claim 1 wherein the package includes two or more wafers that are ultimately wafer bonded together to define the device cavity.

14. The package of claim 1 wherein the device includes a MEMS device.

15. The package of claim 1 wherein the device includes a MEMS gyroscope.

16. The package of claim 1 wherein the device includes a MEMS accelerometer.

17. The package of claim 1 wherein the device includes an IR sensor device.

18. The package of claim 1 wherein the getter is Zirconium.

19. The package of claim 1 wherein the getter is Titanium.

20. The package of claim 1 wherein the getter is Boron.

21. A device comprising:

a die having a first side and a second side;

one or more devices fabricated on the first side of the die; and

a getter deposited on the die.

22. The device of claim 21 wherein the getter is deposited on the first side of the die.

23. The device of claim 21 wherein the getter is deposited on the second side of the die.

24. The device of claim 21 wherein the die is provided in a device receiving cavity of a package, wherein the device receiving cavity is adapted to provide a reduced pressure environment for the die.

25. A package comprising:

a first substrate including one or more MEMS devices;

a second substrate bonded to the first substrate;

wherein the first substrate and the second substrate are configured such that a cavity is formed around the one or more MEMS devices when the first substrate and second substrate are bonded together; and

a getter deposited on the first substrate and/or the second substrate such that the getter is exposed to the cavity when the first substrate and second substrate are bonded together.

26. The package of claim 25 wherein the getter is deposited by sputtering.

27. The package of claim 25 wherein the getter is deposited by evaporation

28. The package of claim 27 wherein the getter is deposited by resistive evaporation

29. The package of claim 27 wherein the getter is deposited by e-beam evaporation.

30. The package of claim 25 wherein the getter is deposited by vapor deposition.

31. The package of claim 25 wherein the getter is deposited by atomic layer deposition.

32. The package of claim 25 wherein the getter is Zirconium.

33. The package of claim 25 wherein the getter is Titanium.

34. The package of claim 25 wherein the getter is Boron.

35. A method of packaging a device in a device cavity, the method comprising:

providing a first substrate and a second substrate, wherein the first substrate and the second substrate are adapted to form the device cavity therebetween when the first substrate and the second substrate are bonded together;

depositing a getter on the first substrate and/or the second substrate such that at least part of the getter will be in the device cavity when the first substrate and the second substrate are bonded together;

bonding the first substrate to the second substrate in a reduced pressure environment to form the device cavity; and

activating the getter.

36. The method of claim 35 wherein the getter is activated by heat.

37. The method of claim 35 wherein the getter is activated during the bonding step.

38. The method of claim 35 wherein the getter is activated before the bonding step.

39. The method of claim 35 wherein the getter is activated after the bonding step.

40. The method of claim 35, wherein the first substrate includes a package housing and the second substrate includes a package lid.

41. The method of claim 35, wherein the first substrate includes a first wafer and the second substrate includes a second wafer.

42. The package of claim 35 wherein the getter is deposited by sputtering.

43. The package of claim 35 wherein the getter is deposited by evaporation

44. The package of claim 35 wherein the getter is deposited by vapor deposition.

45. The package of claim 35 wherein the getter is deposited by atomic layer deposition.

46. The package of claim 35 wherein the getter is Zirconium.

47. The package of claim 35 wherein the getter is Titanium.

48. The package of claim 35 wherein the getter is Boron.