Input buffer with automatic switching point adjustment circuitry, and synchronous dram device including same

• US 20050253629A1
• Filed: 07/25/2005
• Published: 11/17/2005
• Est. Priority Date: 06/13/2001
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Zivanovic, Branimir M.
• Granted Patent: US 7,154,289 B2
• Time in Patent Office: Days
• US Class Current: 327/108
• CPC Class Codes: G01R 31/31924 Voltage or current aspects, e.g. driver, receiver
• CPC Class Codes: G01R 31/3193 with comparison between actual response and known fault free response receiver details G01R31/31924
• CPC Class Codes: G11C 7/1078 Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
• CPC Class Codes: G11C 7/1084 Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
• CPC Class Codes: G11C 7/22 Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
• CPC Class Codes: G11C 7/225 Clock input buffers
• CPC Class Codes: H03K 5/082 with an adaptive threshold
• CPC Class Codes: H03K 5/086 generated by feedback
• CPC Class Codes: H03K 5/1565 the output pulses having a constant duty cycle

Abstract

An input buffer is presented for buffering an input signal having a voltage magnitude which alternates between a first voltage level and a second voltage level, where the first and second voltage levels may vary over time. In one embodiment, the input buffer includes a first and second detector circuits, an average generator circuit, and a differential amplifier. The first detector circuit receives the input signal and produces a first signal having a magnitude indicative of the first voltage level. The second detector circuit receives the input signal and produces a second signal having a magnitude indicative of the second voltage level. The average generator circuit receives the first and second signals, and uses the magnitudes of the first and second signals to produce a third signal having a magnitude indicative of a third voltage level substantially mid way between the first voltage level and the second voltage level. The third voltage level defines a variable an automatically adjusted “switching point”. The differential amplifier receives the input signal, the third signal, and a first and second power supply voltages. The differential amplifier amplifies a difference between the voltage magnitude of the input signal and the third voltage level in order to produce an output signal which alternates between the first and second power supply voltages. An integrated circuit is described including the input buffer coupled between one of a set of input/output pads and circuitry, wherein the circuitry may be synchronous dynamic random access memory (SDRAM) circuitry.

Claims

1-54. -54. (canceled)

55. A semiconductor device, comprising:

a semiconductor substrate;

a detector circuit formed in or on the semiconductor substrate, the detector circuit being adapted to receive an input signal, wherein a voltage magnitude of the input signal alternates between a first voltage level and a second voltage level, and wherein the detector circuit is configured to produce a first signal having a magnitude indicative of the first voltage level and a second signal having a magnitude indicative of the second voltage level; and

an average generator circuit formed in or on the semiconductor substrate, the average generator circuit being adapted to receive the first and second signals and configured to use the magnitudes of the first and second signals to produce a third signal having a magnitude indicative of a third voltage level substantially mid way between the first voltage level and the second voltage level.

56. The semiconductor device as recited in claim 55, wherein the input signal alternates between the first voltage level and the second voltage level periodically and has a period and a duty cycle.

57. The semiconductor device as recited in claim 55, wherein the third voltage level defines a switching point, and wherein a first noise margin exists between the switching point and the first voltage level of the input signal, and wherein a second noise margin exists between the switching point and the second voltage level of the input signal, and wherein the switching point varies with changes in the first and second voltage levels of the input signal such that the first and second noise margins are maintained substantially equal.

58. The semiconductor device as recited in claim 55, wherein the first voltage level is greater than the second voltage level.

59. The semiconductor device as recited in claim 55, wherein the first signal is substantially equal to the first voltage level.

60. The semiconductor device as recited in claim 55, wherein the second signal is substantially equal to the second voltage level.

61. The semiconductor device as recited in claim 55, wherein the third voltage signal is substantially equal to the third voltage level.

62. The semiconductor device of claim 55, wherein the detector circuit comprises a first detector circuit configured to produce the first signal and a second detector circuit configured to produce the second signal.

63. The semiconductor device of claim 62, wherein the first detector circuit is configured to produce the first signal having the magnitude substantially equal to the first voltage level, and wherein the second detector circuit is configured to produce the second signal having the magnitude substantially equal to the second voltage level.

64. The semiconductor device as recited in claim 63, wherein the first detector circuit comprises a p-channel metal oxide semiconductor (pMOS) transistor and a capacitor, and wherein a source terminal of the pMOS transistor is coupled to receive the input signal, and wherein the capacitor is coupled between a drain terminal of the pMOS transistor and the second power supply voltage, and wherein electrical current flows through the pMOS transistor and charges the capacitor when the voltage magnitude of the input signal is the first voltage level and a voltage across the capacitor is substantially less that the first voltage level.

65. The semiconductor device as recited in claim 63, wherein the second detector circuit comprises a p-channel metal oxide semiconductor (pMOS) transistor and a capacitor, and wherein a drain terminal of the pMOS transistor is coupled to receive the input signal, and wherein the capacitor is coupled between a source terminal of the pMOS transistor and the first power supply voltage, and wherein electrical current flows through the pMOS transistor and charges the capacitor when the voltage magnitude of the input signal is the second voltage level and a voltage between the source terminal and the second power supply voltage is substantially greater than the second voltage level.

66. The semiconductor device as recited in claim 55, wherein the average generator circuit comprises a pair of resistors connected in series between the first and second signals, and wherein the third signal is produced at a connection point between the pair of resistors, and wherein the pair of resistors have substantially equal resistance values such that the third signal is substantially mid way between the first voltage level and the second voltage level.

67. The semiconductor device of claim 55, further comprising a differential amplifier adapted to receive the input signal, the third signal, a first power supply voltage, and a second power supply voltage, wherein the differential amplifier is configured to amplify a difference between the magnitude of the input signal and the third voltage level in order to produce an output signal which alternates between the first and second power supply voltages.

68. The semiconductor device of claim 67, wherein the first power supply voltage is greater than or equal to the first voltage level, and wherein the second power supply voltage is less than or equal to the second voltage level.

69. The semiconductor device of claim 67, wherein the differential amplifier is configured to amplify the difference between the voltage magnitude of the input signal and the third voltage level to vary a rise time and a fall time of the output signal.

70. The semiconductor device as recited in claim 67, wherein the output signal alternates between the first and second power supply voltages periodically and has a period substantially equal to a period of the input signal and a duty cycle substantially equal to a duty cycle of the input signal.

71. The semiconductor device as recited in claim 67, wherein the differential amplifier comprises a plurality of metal oxide semiconductor (MOS) transistors, connected together to form a differential network, and an inverter, and wherein the differential network is coupled to receive the input signal and the third signal and configured to amplify the difference between the magnitudes of the input signal and the third signal to produce an intermediate signal, and wherein the inverter is coupled to receive the intermediate signal at an input terminal and the first and second power supply voltages, and wherein the inverter is configured to produce the output signal at an output terminal, and wherein the output signal alternates between the first and second power supply voltages.

72. A memory device, comprising:

an input/output pad adapted to receive an input signal, wherein a voltage magnitude of the input signal alternates between a first voltage level and a second voltage level;

an input buffer, comprising;

a first detector circuit coupled to the input/output pad and configured to produce a first signal having a magnitude indicative of the first voltage level of the input signal;

a second detector circuit coupled to the input/output pad and configured to produce a second signal having a magnitude indicative of the second voltage level of the input signal;

an average generator circuit coupled to receive the first and second signals and configured to use the magnitudes of the first and second signals to produce a third signal having a magnitude indicative of a third voltage level substantially mid way between the first voltage level and the second voltage level; and

at least one memory element coupled to receive the third signal and configured to perform a function dependent upon the third signal.

73. The memory device as recited in claim 71, wherein the input signal is a first serial data stream, and the output signal is a second serial data stream.

74. The memory device as recited in claim 71, wherein the input signal is a first clock signal, and the output signal is a second clock signal.

75. The memory device as recited in claim 71, wherein said at least one memory element further comprises synchronous dynamic random access memory (SDRAM) circuitry, and wherein the SDRAM circuitry uses the second clock signal to synchronize internal operations.

72-1. The memory device of claim 71, further comprising a differential amplifier coupled to the input/output pad and coupled to receive the third signal, a first power supply voltage, and a second power supply voltage, wherein the differential amplifier is configured to amplify a difference between the voltage magnitude of the input signal and the third voltage level in order to produce an output signal which alternates between the first and second power supply voltages.

76. A dynamic random access memory device, comprising:

an input/output pad adapted to receive an input signal, wherein a voltage magnitude of the input signal alternates between a first voltage level and a second voltage level;

an input buffer, comprising;

a first detector circuit coupled to the input/output pad and configured to produce a first signal having a magnitude indicative of the first voltage level of the input signal;

a second detector circuit coupled to the input/output pad and configured to produce a second signal having a magnitude indicative of the second voltage level of the input signal;

an average generator circuit coupled to receive the first and second signals and configured to use the magnitudes of the first and second signals to produce a third signal having a magnitude indicative of a third voltage level substantially mid way between the first voltage level and the second voltage level; and

at least one dynamic random access memory element coupled to receive the third signal and configured to perform a function dependent upon the third signal.

77. The dynamic random access memory device of claim 76, further comprising a differential amplifier coupled to the input/output pad and coupled to receive the third signal, a first power supply voltage, and a second power supply voltage, wherein the differential amplifier is configured to amplify a difference between the voltage magnitude of the input signal and the third voltage level in order to produce an output signal which alternates between the first and second power supply voltages.

78. The dynamic random access memory device as recited in claim 76, wherein the input signal is a first serial data stream, and the output signal is a second serial data stream.

79. The dynamic random access memory device as recited in claim 76, wherein the input signal is a first clock signal, and the output signal is a second clock signal.

80. The dynamic random access memory device as recited in claim 76, wherein said at least one dynamic random access memory element further comprises synchronous dynamic random access memory (SDRAM) circuitry, and wherein the SDRAM circuitry uses the second clock signal to synchronize internal operations.