Semiconductor light emitting element and method for manufacturing the same
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Abstract
A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.
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Citations
26 Claims
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1-6. -6. (canceled)
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7. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by regrowing GaP thereon by MOCVD using source material gases of a group V source material including phosphorus and a group III source material including gallium at a growth temperature in a range from a lower limit equal to or higher than 350°
C. to an upper limit equal to or lower than 700°
C. - View Dependent Claims (8, 9, 20)
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10. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by thermal decomposition of the side surfaces of the GaP substrate in a mixed gas of a group V source material including phosphorus with hydrogen, or hydrogen, used as the atmospheric gas, which is controlled in temperature in a range from a lower limit equal to or higher than 350°
C. to an upper limit equal to or lower than 1000°
C., and by removing droplets of gallium as residues of the thermal decomposition by etching with an etchant. - View Dependent Claims (11, 12, 21)
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13. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by forming a metal layer of any of Al, Ti, Sn, Ag and Au by vapor deposition of sputtering and removing the metal layer by etching with an etchant. - View Dependent Claims (14, 22)
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15. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by blasting the side surfaces with particles containing alumina adjusted in diameter in a range from a smaller limit equal to or larger than 2 μ
m to a larger limit equal to or smaller than 3 μ
m, and etching them with an etchant. - View Dependent Claims (16, 23)
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17. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface by using a dicing blade having depressions and protrusions on an outer surface thereof; and
forming a plurality of depressions and protrusions on the side surfaces by etching them with an etchant. - View Dependent Claims (24)
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18. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by etching with an etchant while irradiating halogen light. - View Dependent Claims (25)
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19. A method for manufacturing a semiconductor light emitting element, comprising:
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forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ
permitted to pass through the GaP substrate;
forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface; and
forming a plurality of depressions and protrusions on the side surfaces by heating them to a softening point of the GaP crystal and pressing a die defining depressions and protrusions onto the heated side surfaces. - View Dependent Claims (26)
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Specification