Semiconductor light emitting element and method for manufacturing the same

• US 20050255615A1
• Filed: 07/22/2005
• Published: 11/17/2005
• Est. Priority Date: 04/05/2002
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Abe, Hirohisa, Konno, Kuniaki, Sugawara, Hideto, Watanabe, Yukio
• Application Number:
  US11/187,072
• Publication Number:
  US 20050255615A1
• Time in Patent Office: Days
• US Class Current: 438/21
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10155 being other than a cuboid
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

Claims

1-6. -6. (canceled)

7. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by regrowing GaP thereon by MOCVD using source material gases of a group V source material including phosphorus and a group III source material including gallium at a growth temperature in a range from a lower limit equal to or higher than 350°

C. to an upper limit equal to or lower than 700°

C.

8. A method for manufacturing a semiconductor light emitting element according to claim 7 wherein the depressions and protrusions have a height in a range from a lower limit equal to or higher than 0.1λ

to an upper limit equal to or lower than 3λ

.

9. A method for manufacturing a semiconductor light emitting element according to claim 7 wherein the GaP substrate is an off-axis (100) GaP substrate with the off-axis angle of θ

(5°

≦

θ

≦

20°

) along the [011] direction.

20. A method for manufacturing a semiconductor light emitting element according to claim 7, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.

10. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by thermal decomposition of the side surfaces of the GaP substrate in a mixed gas of a group V source material including phosphorus with hydrogen, or hydrogen, used as the atmospheric gas, which is controlled in temperature in a range from a lower limit equal to or higher than 350°

C. to an upper limit equal to or lower than 1000°

C., and by removing droplets of gallium as residues of the thermal decomposition by etching with an etchant.

11. A method for manufacturing a semiconductor light emitting element according to claim 10 wherein the depressions and protrusions have a height in a range from a lower limit equal to or higher than 0.1λ

to an upper limit equal to or lower than 3λ

.

12. A method for manufacturing a semiconductor light emitting element according to claim 10 wherein the GaP substrate is an off-axis (100) GaP substrate with the off-axis angle of θ

(5°

≦

θ

≦

20°

) along the [011] direction.

21. A method for manufacturing a semiconductor light emitting element according to claim 10, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.

13. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by forming a metal layer of any of Al, Ti, Sn, Ag and Au by vapor deposition of sputtering and removing the metal layer by etching with an etchant.

14. A method for manufacturing a semiconductor light emitting element according to claim 13 wherein the depressions and protrusions have a height in a range from a lower limit equal to or higher than 0.1λ

to an upper limit equal to or lower than 3λ

.

22. A method for manufacturing a semiconductor light emitting element according to claim 13, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.

15. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by blasting the side surfaces with particles containing alumina adjusted in diameter in a range from a smaller limit equal to or larger than 2 μ

m to a larger limit equal to or smaller than 3 μ

m, and etching them with an etchant.

16. A method for manufacturing a semiconductor light emitting element according to claim 15 wherein the depressions and protrusions have a height in a range from a lower limit equal to or higher than 0.1λ

to an upper limit equal to or lower than 3λ

.

23. A method for manufacturing a semiconductor light emitting element according to claim 15, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.

17. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface by using a dicing blade having depressions and protrusions on an outer surface thereof; and

forming a plurality of depressions and protrusions on the side surfaces by etching them with an etchant.

24. A method for manufacturing a semiconductor light emitting element according to claim 17, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.

18. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by etching with an etchant while irradiating halogen light.

25. A method for manufacturing a semiconductor light emitting element according to claim 18, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.

19. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by heating them to a softening point of the GaP crystal and pressing a die defining depressions and protrusions onto the heated side surfaces.

26. A method for manufacturing a semiconductor light emitting element according to claim 19, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.