Laser irradiation method and method for manufacturing semiconductor device using the same
First Claim
1. A laser irradiation method comprising:
- emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of an irradiation object; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam;
wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism before the irradiation object is moved.
1 Assignment
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Accused Products
Abstract
The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.
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Citations
93 Claims
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1. A laser irradiation method comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of an irradiation object; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam;
wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism before the irradiation object is moved. - View Dependent Claims (4, 5, 6, 7)
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2. A laser irradiation method comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of an irradiation object where a swell exists along a first direction; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
wherein a distance between the lens and the irradiation object is controlled by an autofocusing mechanism before the irradiation object is moved in the second direction. - View Dependent Claims (42, 43, 44, 45)
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3. A laser irradiation method comprising:
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emitting a first laser beam from a laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of an irradiation object where a swell exists along a first direction; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
wherein a distance between the lens and the irradiation object is controlled by an autofocusing mechanism when the irradiation object is moved in the first direction. - View Dependent Claims (46, 47, 48, 49)
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8. A laser irradiation method comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of an irradiation object; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam;
wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism before the irradiation object is moved. - View Dependent Claims (11, 12, 13, 14, 15, 19, 20)
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9. A laser irradiation method comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of an irradiation object where a swell exists along a first direction; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and a second direction perpendicular to the first direction;
wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism before the irradiation object is moved in the second direction. - View Dependent Claims (16, 17, 18, 50, 51, 52, 53, 54, 63, 64)
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10. A laser irradiation method comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot on a surface of an irradiation object by condensing the first laser beam with a lens to make the first laser beam incident obliquely into the surface of the irradiation object where a swell exists along a first direction; and
irradiating the irradiation object with the first laser beam by moving the irradiation object relative to the first laser beam in the first direction and in a second direction perpendicular to the first direction;
wherein a distance between the irradiation object and the lens is controlled by an autofocusing mechanism when the irradiation object is moved in the first direction. - View Dependent Claims (55, 56, 57, 58, 59, 60, 61, 62, 65, 66)
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21. A method for manufacturing a semiconductor device comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of a semiconductor film; and
irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam so as to anneal the semiconductor film;
wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved. - View Dependent Claims (24, 25, 26, 27)
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22. A method for manufacturing a semiconductor device comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of a semiconductor film where a swell exists along a first direction; and
irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved in the second direction. - View Dependent Claims (67, 68, 69, 70)
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23. A method for manufacturing a semiconductor device comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident vertically into a surface of a semiconductor film where a swell exists along a first direction; and
irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism when the semiconductor film is moved in the first direction. - View Dependent Claims (71, 72, 73, 74)
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28. A method for manufacturing a semiconductor device comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of a semiconductor film; and
irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam so as to anneal the semiconductor film;
wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved. - View Dependent Claims (31, 32, 33, 34, 35, 36, 40, 41)
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29. A method for manufacturing a semiconductor device comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of a semiconductor film where a swell exists along a first direction; and
irradiating the semiconductor film with the first laser beam by moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism before the semiconductor film is moved in the second direction. - View Dependent Claims (37, 38, 39, 75, 76, 77, 78, 79, 88, 89, 90)
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30. A method for manufacturing a semiconductor device comprising:
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emitting a first laser beam from a first laser oscillator;
forming a beam spot by condensing the first laser beam with a lens to make the first laser beam incident obliquely into a surface of a semiconductor film where a swell exists along a first direction; and
by irradiating the semiconductor film with the first laser beam while moving the semiconductor film relative to the first laser beam in the first direction and a second direction perpendicular to the first direction so as to anneal the semiconductor film;
wherein a distance between the semiconductor film and the lens is controlled by an autofocusing mechanism when the semiconductor film is moved in the first direction. - View Dependent Claims (80, 81, 82, 83, 84, 85, 86, 87, 91, 92, 93)
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Specification