Organic light emitting diode display device and method of manufacturing the same

• US 20050258745A1
• Filed: 09/02/2003
• Published: 11/24/2005
• Est. Priority Date: 09/03/2002
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: CHI MEI Optoelectronics Corporation
• Inventors: Kohara, Sayuri, Sueoka, Kuniaki, Tsujimura, Takatoshi, Morooka, Mitsuo
• Granted Patent: US 7,221,089 B2
• Time in Patent Office: Days
• US Class Current: 313/506
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

An organic light emitting diode display device includes a plurality of organic light emitting diode elements that are arranged in a matrix; a plurality of protective layers, each of the protective layers covering at least one of the organic light emitting diode elements; and a stress relaxation layer that is formed between the protective layers, for relaxing a stress caused by the protective layers. The stress relaxation layer may surround the protective layer. Moreover, the stress relaxation layer may be made of a shading material, and serve as a mask for forming the organic light emitting diode elements.

Claims

1. An organic light emitting diode display device comprising:

an organic light emitting diode element;

a protective layer covering the organic light emitting diode element; and

a stress relaxation layer adjacent to sides of the protective layer, for relaxing a stress caused by the protective layer.

2. The organic light emitting diode display device according to claim 1, wherein

the stress relaxation layer surrounds the protective layer.

3. The organic light emitting diode display device according to claim 1, wherein

there is a space between the sides of the protective layer and the stress relaxation layer.

4. The organic light emitting diode display device according to claim 1, wherein

the stress relaxation layer is made of a material different from that of the protective layer.

5. The organic light emitting diode display device according to claim 1, wherein

the stress relaxation layer is made of a shading material.

6. The organic light emitting diode display device according to claim 1, wherein

the protective layer is made of an inorganic material, and the stress relaxation layer is made of an organic material.

7. The organic light emitting diode display device according to claim 1, wherein

the protective layer is made of a silicon nitride, and the stress relaxation layer is made of a photoresist.

8. The organic light emitting diode display device according to claim 1, wherein

a top face of the stress relaxation layer is above the protective layer.

9. The organic light emitting diode display device according to claim 1, wherein

a vertical cross section of the stress relaxation layer is a trapezoid with a top wider than a base.

10. An organic light emitting diode display device comprising:

a plurality of organic light emitting diode elements that are arranged in a matrix;

a plurality of protective layers, each of the protective layers covering at least one of the organic light emitting diode elements; and

a stress relaxation layer that is formed between the protective layers, for relaxing a stress caused by the protective layers.

11. The organic light emitting diode display device according to claim 10, wherein

the stress relaxation layer serves as a mask for forming the organic light emitting diode elements.

12. The organic light emitting diode display device according to claim 10, further comprising:

a substrate;

a plurality of driver elements formed on the substrate, each of driver elements driving the corresponding organic light emitting diode element;

a plurality of switching elements formed on the substrate, each of switching elements controlling the corresponding organic light emitting diode element; and

an insulating layer covering the driver elements and the switching elements, wherein

the organic light emitting diode elements are formed on the insulating layer.

13. The organic light emitting diode display device according to claim 12, wherein

the switching elements and the driver elements are made of thin film transistors.

14. A method of manufacturing an organic light emitting diode display device, comprising:

forming on a substrate thin film transistors for driving an organic light emitting diode element;

forming an insulating layer to cover the thin film transistors;

forming a stress relaxation layer to surround area where a protective layer is formed, for relaxing a stress caused by the protective layer;

forming an organic light emitting diode element on a part of the area; and

forming the protective layer on the area to cover the organic light emitting diode element.