In-situ process chamber preparation methods for plasma ion implantation systems
First Claim
1. A method for plasma ion implantation of a substrate, comprising:
- providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a voltage source for accelerating ions from the plasma into the substrate;
depositing on interior surfaces of the process chamber a coating that is compatible with a plasma ion implantation process performed in the process chamber; and
plasma ion implantation of the substrate according to the plasma ion implantation process.
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Abstract
A method for plasma ion implantation of a substrate includes providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding the substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate, depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate, before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors, plasma ion implantation of the substrate according to a plasma ion implantation process, and repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
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Citations
52 Claims
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1. A method for plasma ion implantation of a substrate, comprising:
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providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a voltage source for accelerating ions from the plasma into the substrate;
depositing on interior surfaces of the process chamber a coating that is compatible with a plasma ion implantation process performed in the process chamber; and
plasma ion implantation of the substrate according to the plasma ion implantation process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for plasma ion implantation of a substrate, comprising:
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providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a voltage source for accelerating ions from the plasma into the substrate;
depositing on interior surfaces of the process chamber a dopant-containing coating that is compatible with a plasma ion implantation process performed in the process chamber; and
plasma ion implantation of the substrate according to the plasma ion implantation process. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method for plasma ion implantation of a substrate, comprising:
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providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate;
cleaning interior surfaces of the process chamber with a cleaning gas that is compatible with a plasma ion implantation process performed in the process chamber; and
plasma ion implantation of the substrate according to the plasma ion implantation process. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A method for plasma ion implantation of a substrate, comprising:
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providing a plasma ion implantation system including a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber, and a voltage source for accelerating ions from the plasma into the substrate;
depositing on interior surfaces of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate;
before depositing the fresh coating, cleaning interior surfaces of the process chamber by removing an old film using one or more activated cleaning precursors;
plasma ion implantation of the substrate according to a plasma ion implantation process; and
repeating the steps of cleaning interior surfaces of the process chamber and depositing a fresh coating following plasma ion implantation of one or more substrates.
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49. A plasma ion implantation system comprising:
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a process chamber;
a source for producing a plasma in the process chamber;
a platen for holding a substrate in the process chamber;
a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate; and
means for depositing on interior surfaces of the process chamber a coating that is compatible with a plasma ion implantation process performed in the process chamber.
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50. A plasma ion implantation system comprising:
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a process chamber;
a source for producing a plasma in the process chamber;
a platen for holding a substrate in the process chamber;
a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate; and
means for depositing on interior surfaces of the process chamber a dopant-containing coating that is compatible with a plasma ion implantation process performed in the process chamber.
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51. A plasma ion implantation system comprising:
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a process chamber;
a source for producing a plasma in the process chamber;
a platen for holding a substrate in the process chamber;
a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate; and
means for cleaning interior surfaces of the process chamber with a cleaning gas that is compatible with a plasma ion implantation process performed in the process chamber.
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52. A plasma ion implantation system comprising:
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a process chamber;
a source for producing a plasma in the process chamber;
a platen for holding a substrate in the process chamber;
a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate;
means for depositing on an interior surface of the process chamber a fresh coating that is similar in composition to a deposited film that results from plasma ion implantation of the substrate; and
means for cleaning interior surfaces of the process chamber, before depositing the fresh coating, by removing an old film using one or more activated cleaning precursors.
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Specification