SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FORMING THE SAME

• US 20050263776A1
• Filed: 06/29/2005
• Published: 12/01/2005
• Est. Priority Date: 07/15/2002
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Hsieh, Min-Hsun, TSAI, CHIA-FEN
• Granted Patent: US 7,928,455 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil

Abstract

A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.

Claims

1. A semiconductor light-emitting device comprising:

a light-impervious substrate;

a bonding structure;

a semiconductor light-emitting stack for emitting original light, separated from a growth substrate and bonded to the light-impervious substrate through the bonding structure; and

a fluorescent material structure overlaying the semiconductor light-emitting stack, comprising a fluorescent material for absorbing the original light and generating converted light, and being substantially in contour conformity with the semiconductor light-emitting stack.

2. The semiconductor light-emitting device of claim 1, wherein the light-impervious substrate comprises a material selected from a group consisting of semiconductor, metal, Si, GaN/Si, and GaAs.

3. The semiconductor light-emitting device of claim 1, wherein the light-impervious substrate is reflective.

4. The semiconductor light-emitting device of claim 1, wherein the light-impervious substrate comprises:

a transparent substrate; and

a reflective layer.

5. The semiconductor light-emitting device of claim 4, wherein the transparent substrate comprises a material selected from a group consisting of GaP, SiC, ZnO, GaAsP, AlGaAs, Al₂O₃, and glass.

6. The semiconductor light-emitting device of claim 1, wherein the bonding structure is transparent.

7. The semiconductor light-emitting device of claim 1, wherein the light-impervious substrate is electrically connected to the semiconductor light-emitting stack.

8. The semiconductor light-emitting device of claim 1, wherein the bonding structure is reflective.

9. The semiconductor light-emitting device of claim 1, wherein the bonding structure comprises a material selected from a group consisting of metal, epoxy, PI, BCB, and PFCB.

10. The semiconductor light-emitting device of claim 1, wherein the bonding structure is a region adjacent to an interface where the light-impervious substrate directly contacts the semiconductor light-emitting stack.

11. The semiconductor light-emitting device of claim 1, wherein the bonding structure comprises:

a first intermediate layer;

an adhesive layer; and

a second intermediate layer.

12. The semiconductor light-emitting device of claim 11, wherein each of the first and second intermediate layers comprises a material selected from a group consisting of SiN_x, Ti, and Cr.

13. The semiconductor light-emitting device of claim 11, wherein the adhesive layer comprises a material selected from a group consisting of epoxy, PI, BCB, and PFCB.

14. The semiconductor light-emitting device of claim 1, wherein the fluorescent material structure further comprises a binder.

15. The semiconductor light-emitting device of claim 1, wherein the fluorescent material structure is a non-glued fluorescent material structure.

16. The semiconductor light-emitting device of claim 1, wherein the fluorescent material is in the form of powder.

17. The semiconductor light-emitting device of claim 16, wherein an average diameter of the powder is in the range of about 0.1˜

100 micrometers.

18. The semiconductor light-emitting device of claim 1, further comprising a protection structure formed over the fluorescent material structure.

19. The semiconductor light-emitting device of claim 18, wherein the protection structure comprises a plurality of optical layers.

20. The semiconductor light-emitting device of claim 18, wherein thicknesses of the plurality of optical layers increase with their respective distance from the semiconductor light-emitting stack.

21. The semiconductor light-emitting device of claim 18, wherein the protection structure comprises a material selected from a group consisting of Su8, BCB, PFCB, epoxy, acrylic resin, COC, PMMA, PET, PC, polyetherimide, fluorocarbon polymer, silicone, and glass.

22. The semiconductor light-emitting device of claim 1, further comprising a reflective layer between the light-impervious substrate and the semiconductor light-emitting stack.

23. The semiconductor light-emitting device of claim 1, wherein the semiconductor light-emitting stack comprises a transparent conductive layer.

24. The semiconductor light-emitting device of claim 23, wherein the transparent conductive layer comprises a material selected from a group consisting of indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, zinc oxide, zinc tin oxide, Ni/Au, NiO/Au, and TiWN.

25. A method for producing a semiconductor light-emitting device comprising:

separating a semiconductor light-emitting stack from a growth substrate;

bonding the semiconductor light-emitting stack to a light-impervious substrate; and

forming a fluorescent material structure over the semiconductor light-emitting stack.

26. The method of claim 25, wherein the bonding step comprises forming a bonding structure between the semiconductor light-emitting stack and the light-impervious substrate.

27. The method of claim 26, wherein the bonding structure comprises a material selected from a group consisting of an adhesive, solder, semiconductor, reflective layer, SiN_x, Ti, and Cr.

28. The method of claim 26, wherein the bonding structure is a region substantially adjacent to an interface where the light-impervious substrate directly contacts the semiconductor light-emitting stack.

29. The method of claim 25, wherein the bonding step comprises:

forming a first intermediate layer over the light-impervious substrate;

forming a second intermediate layer over the semiconductor light-emitting stack; and

bonding the light-impervious substrate to the semiconductor light-emitting stack through an adhesive between the first and second intermediate layers.

30. The method of claim 25, wherein the forming step comprises disposing a fluorescent material over the semiconductor light-emitting stack to form the fluorescent material structure.

31. The method of claim 26, wherein the fluorescent material structure comprises a fluorescent material and a binder.

32. The method of claim 25, further comprising forming a trench on the semiconductor light-emitting stack.

33. The method of claim 25, further comprising dicing the semiconductor light-emitting stack.

34. The method of claim 25, further comprising forming a protection layer over the fluorescent material structure.

35. The method of claim 26, further comprising forming a reflective layer between the light-impervious substrate and the semiconductor light-emitting stack.