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Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress

  • US 20050263825A1
  • Filed: 02/15/2005
  • Published: 12/01/2005
  • Est. Priority Date: 05/28/2004
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a first dielectric layer over a first transistor element and a second transistor element, said first dielectric layer having a first specified intrinsic mechanical stress;

    forming a mask layer above said first and second transistor elements to expose a first portion of said first dielectric layer formed above said first transistor element and cover a second portion of said first dielectric layer formed above said second transistor element; and

    modifying said first intrinsic stress in said first portion to a modified intrinsic stress by ion bombardment of said first portion.

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