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Semiconductor device having silicon carbide and conductive pathway interface

  • US 20050263900A1
  • Filed: 06/29/2005
  • Published: 12/01/2005
  • Est. Priority Date: 11/17/1998
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an interface defined by a first insulating layer comprising silicon carbide and one or more conductive pathways disposed within said layer, the interface having oxidation reduced portions; and

    a second insulating layer disposed upon said interface coincident with removal of said oxidation reduced portions.

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