Tandem OLED having stable intermediate connectors

• US 20050264174A1
• Filed: 05/28/2004
• Published: 12/01/2005
• Est. Priority Date: 05/28/2004
• Status: Active Grant

• Current Assignee: Global OLED Technology LLC (LG Display Co., Ltd.)
• Original Assignee: Eastman Kodak Company
• Inventors: Liao, Liang-Sheng, Tang, Ching W.
• Granted Patent: US 7,126,267 B2
• Time in Patent Office: Days
• US Class Current: 313/500
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/19 Tandem OLEDs

Abstract

A tandem OLED includes an anode, a cathode, and a plurality of organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer, and an intermediate connector disposed between each adjacent organic electroluminescent unit, wherein the intermediate connector includes at least a high work function metal layer having a work function of no less than 4.0 eV and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 kΩ per square, and wherein the high work function metal layer improves the operational stability of the OLED.

Claims

1. A tandem OLED comprising:

a) an anode;

b) a cathode;

c) a plurality of organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer; and

d) an intermediate connector disposed between each adjacent organic electroluminescent unit, wherein the intermediate connector includes at least a high work function metal layer having a work function of no less than 4.0 eV and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 kΩ

per square, and wherein the high work function metal layer improves the operational stability of the OLED.

2. The tandem OLED of claim 1 wherein each organic electroluminescent unit includes at least a hole-transporting layer, a light-emitting layer, and an electron-transporting layer, and wherein each intermediate connector includes, in sequence, a low work function metal layer having a work function of less than 4.0 eV disposed adjacent to the electron-transporting layer in the organic electroluminescent unit, a high work function metal layer having a work function of no less than 4.0 eV, and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 kΩ

per square, and wherein the high work function metal layer improves the operational stability of the OLED.

3. The tandem OLED of claim 1 wherein each organic electroluminescent unit includes at least a hole-transporting layer, a light-emitting layer, and an electron-transporting layer, and wherein each intermediate connector includes, in sequence, an n-type semiconductor layer disposed adjacent to the electron-transporting layer in the organic electroluminescent unit, a high work function metal layer having a work function of no less than 4.0 eV, and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 kΩ

per square, and wherein the high work function metal layer improves the operational stability of the OLED.

4. The tandem OLED of claim 1 wherein each organic electroluminescent unit includes at least a hole-transporting layer, a light-emitting layer, and an electron-transporting layer, and wherein the electron-transporting layer is an n-type doped organic layer, and wherein each intermediate connector includes, in sequence, a high work function metal layer having a work function of no less than 4.0 eV disposed adjacent to the electron-transporting layer of the organic electroluminescent unit and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 kΩ

per square, and wherein the high work function metal layer improves the operational stability of the OLED.

5. The tandem OLED of claim 1 wherein the thickness of the high work function metal layer in the intermediate connector is in the range of from 0.1 nm to 5.0 nm.

6. The tandem OLED of claim 1 wherein the thickness of the high work function metal layer in the intermediate connector is in the range of from 0.2 nm to 2.0 nm.

7. The tandem OLED of claim 1 wherein the thickness of the metal compound layer in the intermediate connector is in the range of from 0.5 nm to 20 nm.

8. The tandem OLED of claim 1 wherein the thickness of the metal compound layer in the intermediate connector is in the range of from 1.0 nm to 5 nm.

9. The tandem OLED of claim 2 wherein the thickness of the low work function metal layer in the intermediate connector is in the range of from 0.1 nm to 10 nm.

10. The tandem OLED of claim 2 wherein the thickness of the low work function metal layer in the intermediate connector is in the range of from 0.2 nm to 2.0 nm.

11. The tandem OLED of claim 3 wherein the thickness of the n-type semiconductor layer in the intermediate connector is in the range of from 0.5 nm to 20 nm.

12. The tandem OLED of claim 3 wherein the thickness of the n-type semiconductor layer in the intermediate connector is in the range of from 1.0 nm to 5.0 nm.

13. The tandem OLED of claim 1 wherein the intermediate connector has at least 75% optical transmission in the visible region of the spectrum.

14. The tandem OLED of claim 1 wherein the high work function metal layer includes Ti, Zr, Ti, Nb, Ta, Cr, Mo, W, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Al, In, or Sn.

15. The tandem OLED of claim 1 wherein the high work function metal layer includes Ag, Al, Cu, Au, Zn, In, or Sn.

16. The tandem OLED of claim 1 wherein the high work function metal layer includes Ag or Al.

17. The tandem OLED of claim 1 wherein the metal compound layer is selected from the stoichiometric oxides or nonstoichiometric oxides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, silicon, or germanium, or combinations thereof.

18. The tandem OLED of claim 1 wherein the metal compound layer is selected from the stoichiometric sulfides or nonstoichiometric sulfides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof.

19. The tandem OLED of claim 1 wherein the metal compound layer is selected from the stoichiometric selenides or nonstoichiometric selenides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof.

20. The tandem OLED of claim 1 wherein the metal compound layer is selected from the stoichiometric tellurides or nonstoichiometric tellurides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof.

21. The tandem OLED of claim 1 wherein the metal compound layer is selected from the stoichiometric nitrides or nonstoichiometric nitrides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, gallium, silicon, or germanium, or combinations thereof.

22. The tandem OLED of claim 1 wherein the metal compound layer is selected from the stoichiometric carbides or nonstoichiometric carbides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, aluminum, silicon, or germanium, or combinations thereof.

23. The tandem OLED of claim 1 wherein the metal compound layer is selected from MoO₃, NiMoO₄, CuMoO₄, WO₃, ZnTe, Al₄C₃, AIF₃, B₂S₃, CuS, GaP, InP, or SnTe.

24. The tandem OLED of claim 1 wherein the metal compound layer is selected from MoO₃, NiMoO₄, CuMoO₄, or WO₃.

25. The tandem OLED of claim 2 wherein the low work function metal layer includes Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, Nd, Sm, Eu, Tb, Dy, or Yb.

26. The tandem OLED of claim 2 wherein the low work function metal layer includes Li, Na, Cs, Ca, Ba, or Yb.

27. The tandem OLED of claim 3 wherein the n-type semiconductor layer includes ZnSe, ZnS, ZnSSe, SnSe, SnS, SnSSe, LaCuO₃, or La₄Ru₆O₁₉.

28. The tandem OLED of claim 3 wherein the n-type semiconductor layer includes ZnSe or ZnS.

29. The tandem OLED of claim 1 wherein the intermediate connector is produced by thermal evaporation.

30. The tandem OLED of claim 1 wherein the intermediate connector is produced by electron beam evaporation.

31. The tandem OLED of claim 1 wherein the intermediate connector is produced by ion sputtering technique.