Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals

• US 20050265916A1
• Filed: 05/25/2004
• Published: 12/01/2005
• Est. Priority Date: 05/25/2004
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Crystal Technology, Incorporated (Gooch & Housego PLC)
• Inventors: Jundt, Dieter Hans, Kajiyama, Maria Claudia Custodio, Spitzer, Jason Louis
• Granted Patent: US 7,153,487 B2
• Time in Patent Office: Days
• US Class Current: 423/594.800
• CPC Class Codes: C01G 33/00 Compounds of niobium
• CPC Class Codes: C01G 35/00 Compounds of tantalum
• CPC Class Codes: C01P 2006/40 Electric properties
• CPC Class Codes: Y10S 117/90 Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Abstract

Methods and apparatus for preconditioning a lithium niobate or lithium tantalate crystal. At least a portion of a surface of the crystal is covered with a condensed material including one or more active chemicals. The crystal is heated in a non-oxidizing environment above an activating temperature at which the active chemicals contribute to reducing the crystal beneath the covered surface portion. The crystal is cooled from above the activating temperature to below a quenching temperature at which the active chemicals become essentially inactive for reducing the crystal.

Claims

1. A method for preconditioning a lithium niobate or lithium tantalate crystal, the method comprising:

covering at least a portion of a surface of the crystal with a condensed material including one or more active chemicals;

heating the crystal in a non-oxidizing environment above an activating temperature at which the active chemicals contribute to reducing the crystal beneath the covered surface portion; and

cooling the crystal from above the activating temperature to below a quenching temperature at which the active chemicals become essentially inactive for reducing the crystal.

2. The method of claim 1, wherein reducing the crystal includes reducing the crystal by a reducing reaction in which one or more of the active chemicals participate.

3. The method of claim 2, wherein the reducing reaction includes a plurality of chemical reactions and at least one active chemical participates in a chemical reaction in the plurality of chemical reactions.

4. The method of claim 1, wherein the active chemicals contribute to reducing the crystal by accelerating the reduction of the crystal.

5. The method of claim 1, wherein one or more active chemicals are selected from the group consisting of sodium bicarbonate, potassium carbonate, calcium carbonate, calcium hydride, magnesium carbonate, lithium hydride and lithium carbonate, and combinations thereof.

6. The method of claim 5, wherein one or more active chemicals include sodium bicarbonate, calcium hydride, lithium hydride, or lithium carbonate.

7. The method of claim 6, wherein one or more active chemicals include lithium hydride or lithium carbonate.

8. The method of claim 7, wherein one or more active chemicals include lithium hydride.

9. The method of claim 1, wherein one or more active chemicals include a hydride.

10. The method of claim 9, wherein the hydride is lithium hydride or calcium hydride.

11. The method of claim 1, wherein one or more active chemicals include a carbonate.

12. The method of claim 11, wherein the carbonate is lithium carbonate, potassium carbonate, calcium carbonate, or magnesium carbonate.

13. The method of claim 1, wherein:

covering the surface portion with a condensed material includes covering the surface portion with a condensed material including an inactive component that does not contribute to reducing the crystal at the activating temperature.

14. The method of claim 1, wherein:

covering the surface portion with a condensed material includes depositing a thin film of the condensed material onto the surface portion.

15. The method of claim 14, wherein:

covering the surface portion with a condensed material includes depositing the condensed material by condensation onto the surface portion.

16. The method of claim 15, wherein:

depositing the condensed material by condensation onto the surface portion includes depositing the condensed material during the heating of the crystal in the non-oxidizing environment.

17. The method of claim 15, wherein:

depositing the thin film includes physical vapor deposition of the condensed material onto the surface portion.

18. The method of claim 14, wherein:

depositing the thin film includes spin coating the surface portion with the condensed material.

19. The method of claim 14, wherein:

depositing the thin film includes dip coating the surface portion with the condensed material.

20. The method of claim 1, wherein:

covering the surface portion with a condensed material includes covering the surface portion with a powder of the condensed material.

21. The method of claim 1, wherein:

covering the surface portion with a condensed material includes preparing a solution or dispersion by dissolving or dispersing the active chemicals in a liquid matrix, respectively, and spinning the solution or dispersion onto the surface portion.

22. The method of claim 1, wherein:

heating the crystal above an activating temperature includes heating the crystal to a temperature that is below a ferroelectric phase transition temperature of the crystal.

23. The method of claim 1, wherein:

heating the crystal above an activating temperature includes heating the crystal above about 250 Celsius.

24. The method of claim 1, wherein:

heating the crystal in a non-oxidizing environment includes heating the crystal in a reducing atmosphere.

25. The method of claim 1, wherein:

heating the crystal in a non-oxidizing environment includes heating the crystal in an inert atmosphere.

26. The method of claim 1, wherein:

heating the crystal above an activating temperature includes keeping the crystal above the activating temperature during a predetermined activating time.

27. The method of claim 26, further comprising:

determining the activating time based on the active chemicals in the condensed material.

28. The method of claim 26, wherein:

cooling the crystal from above the activating temperature below a quenching temperature includes cooling the crystal from above the activating temperature below a quenching temperature within a quenching time that is substantially smaller than the activating time.

29. The method of claim 1, wherein the crystal is a crystal wafer.