Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
First Claim
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1. A method of depositing a thin film of germanium oxide and an oxide of a non-germanium metal by atomic layer deposition (ALD) onto a substrate in an ALD chamber, comprising the steps of:
- a) chemisorbing a first precursor compound onto the substrate, the first precursor compound including the non-germanium metal;
b) allowing a first co-reactant compound to react with the first precursor compound chemisorbed onto the substrate thereby forming a thin film of an oxide of the non-germanium metal, the first co-reactant compound including oxygen;
c) chemisorbing a second precursor compound onto the thin film of the oxide of the non-germanium metal, the second precursor compound including germanium; and
d) allowing a second co-reactant compound to react with the second precursor compound chemisorbed onto the thin film of an oxide of the non-germanium metal thereby forming a thin film of germanium oxide on the thin film of the oxide of the non-germanium metal.
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Abstract
Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor compound includes germanium.
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25 Claims
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1. A method of depositing a thin film of germanium oxide and an oxide of a non-germanium metal by atomic layer deposition (ALD) onto a substrate in an ALD chamber, comprising the steps of:
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a) chemisorbing a first precursor compound onto the substrate, the first precursor compound including the non-germanium metal;
b) allowing a first co-reactant compound to react with the first precursor compound chemisorbed onto the substrate thereby forming a thin film of an oxide of the non-germanium metal, the first co-reactant compound including oxygen;
c) chemisorbing a second precursor compound onto the thin film of the oxide of the non-germanium metal, the second precursor compound including germanium; and
d) allowing a second co-reactant compound to react with the second precursor compound chemisorbed onto the thin film of an oxide of the non-germanium metal thereby forming a thin film of germanium oxide on the thin film of the oxide of the non-germanium metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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