Techniques for operating semiconductor devices
First Claim
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1. A method for writing one or more magnetic memory cells, the method comprising the steps of:
- writing data to one or more of the magnetic memory cells;
detecting whether there are any errors in the data written to the one or more magnetic memory cells; and
rewriting the data to each of the one or more previously written magnetic memory cells in which an error is detected.
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Abstract
Techniques for data storage are provided. In one aspect, a method for writing one or more magnetic memory cells comprises the following steps. Data is written to one or more of the magnetic memory cells. It is detected whether there are any errors in the data written to the one or more magnetic memory cells. The data is rewritten to each of the one or more previously written magnetic memory cells in which an error is detected.
20 Citations
16 Claims
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1. A method for writing one or more magnetic memory cells, the method comprising the steps of:
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writing data to one or more of the magnetic memory cells;
detecting whether there are any errors in the data written to the one or more magnetic memory cells; and
rewriting the data to each of the one or more previously written magnetic memory cells in which an error is detected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for writing one or more memory cells, the method comprising the steps of:
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writing data to one or more of the memory cells;
detecting whether there are any errors in the data written to the one or more memory cells using error correction code; and
rewriting the data to each of the one or more previously written memory cells in which an error is detected when a number of errors detected is greater than or equal to two.
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14. An apparatus for writing one or more magnetic memory cells, the apparatus comprising:
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a memory; and
at least one processor, coupled to the memory, operative to;
write data to one or more of the magnetic memory cells;
detect whether there are any errors in the data written to the one or more magnetic memory cells; and
rewrite the data to each of the one or more previously written magnetic memory cells in which an error is detected.
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15. An article of manufacture for writing one or more magnetic memory cells, comprising a machine readable medium containing one or more programs which when executed implement the steps of:
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writing data to one or more of the magnetic memory cells;
detecting whether there are any errors in the data written to the one or more magnetic memory cells; and
rewriting the data to each of the one or more previously written magnetic memory cells in which an error is detected.
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16. An integrated circuit including at least one magnetic random access memory circuit, the at least one random access memory circuit comprising:
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a plurality of magnetic memory cells;
a plurality of bit lines and word lines for selectively accessing one or more of the memory cells; and
a write circuit coupled to at least a portion of the bit lines and word lines, the write circuit being adapted to;
write data to one or more of the magnetic memory cells;
detect whether there are any errors in the data written to the one or more magnetic memory cells; and
rewrite the data to each of the one or more previously written magnetic memory cells in which an error is detected.
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Specification