Tb, b-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same
First Claim
1. A terbium borate-based yellow phosphor represented by the following general formula:
-
(Tb1-x-y-zRexAy)3DaBbO12;
Cezwherein;
RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb;
A is at least one typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr;
D is at least one typical amphoteric element selected from the group consisting of Al, In and Ga;
0≦
x<
0.5;
0≦
y<
0.5;
0<
z<
0.5;
0<
a<
5; and
0<
b<
5.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0≦x<0.5; 0≦y<0.5; 0<z<0.5; 0<a<5; and 0<b<5). The white semiconductor light emitting device of the present invention comprises a semiconductor light emitting diode and the yellow phosphor, which absorbs a portion of light emitted by the semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light. It offers white light from the combination of the light emitted by the semiconductor light emitting diode and the light emitted by the yellow phosphor. The white semiconductor light emitting device of the present invention offers a greatly improved color rendering and experiences less deterioration in light emission efficiency over a long period of service.
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Citations
17 Claims
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1. A terbium borate-based yellow phosphor represented by the following general formula:
(Tb1-x-y-zRexAy)3DaBbO12;
Cezwherein;
RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb;
A is at least one typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr;
D is at least one typical amphoteric element selected from the group consisting of Al, In and Ga;
0≦
x<
0.5;
0≦
y<
0.5;
0<
z<
0.5;
0<
a<
5; and
0<
b<
5.- View Dependent Claims (2, 3)
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4. A preparation method of a terbium borate-based yellow phosphor comprising:
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preparing a precursor solution containing a compound containing at least one element selected from the group consisting of aluminum, indium and gallium, a terbium-containing compound, a cerium-containing compound and boric acid;
forming droplets by spraying said precursor solution; and
drying and pyrolyzing said droplets at 200 to 1,500°
C. and heat treating the same at 800 to 1,800°
C.
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5. A white semiconductor light emitting device comprising:
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a semiconductor light emitting diode; and
a phosphor coating layer comprising a yellow phosphor that absorbs a portion of light emitted by said semiconductor light emitting diode and emits light of wavelength different from that of the absorbed light and a transparent resin;
wherein said yellow phosphor comprises cerium-activated terbium, boron and amphoteric typical element, and said amphoteric typical element is selected from a group consisting of Al, In and Ga, and the mixture of the foregoing. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 17)
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14. A lead type white semiconductor light emitting device comprising:
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a mount lead comprising a lead and a recess portion on said lead;
a blue light emitting LED chip which is disposed in said recess portion, and anode and cathode of which are connected to the lead of said mount lead by metal wires;
a phosphor coating layer filled inside said recess portion to cover said LED chip; and
a casing that seals the mount lead excluding lower portions of said mount lead, said LED chip and phosphor coating layer;
wherein said phosphor coating layer comprises a transparent resin and a terbium borate-based yellow phosphor represented by the following general formula;
(Tb1-x-y-zRexAy)3DaBbO12;
Cezwherein;
RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb;
A is at least one typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr;
D is at least one typical amphoteric element selected from the group consisting of Al, In and Ga;
0≦
x<
0.5;
0≦
y<
0.5;
0<
z<
0.5;
0<
a<
5; and
0<
b<
5.
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15. A surface mount type white semiconductor light emitting device of an injection-molded reflector type comprising:
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a casing having a recess portion at a top thereof and equipped with metal terminals;
a blue light emitting LED chip which is located in said recess portion, and anode and cathode of which are connected to said metal terminals by metal wires; and
a phosphor coating layer filled inside said recess portion to cover said LED chip;
wherein said phosphor coating layer comprises a transparent resin and a terbium borate-based yellow phosphor represented by the following general formula;
(Tb1-x-y-zRexAy)3DaBbO12;
Cezwherein;
RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb;
A is at least one typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr, D is at least one typical amphoteric element selected from the group consisting of Al, In and Ga;
0≦
x<
0.5;
0≦
y<
0.5;
0<
z<
0.5;
0<
a<
5; and
0<
b<
5.
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16. A surface mount type white semiconductor light emitting device of the PCB (printed circuit board) type comprising a blue LED chip and a phosphor coating layer on a PCB layer, wherein said phosphor coating layer comprises a terbium borate-based yellow phosphor represented by the following general formula:
(Tb1-x-y-zRexAy)3DaBbO12;
Cezwherein;
RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb;
A is at least one typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr;
D is at least one typical amphoteric element selected from the group consisting of Al, In and Ga;
0≦
x<
0.5;
0≦
y<
0.5;
0<
z<
0.5;
0<
a<
5; and
0<
b<
5.
Specification