Group III-nitride layers with patterned surfaces
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Accused Products
Abstract
A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
25 Citations
20 Claims
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1-12. -12. (canceled)
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13. An apparatus, comprising:
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a crystalline substrate with a planar surface; and
a plurality of pyramidal field-emitters located over a portion the surface;
a layer of a first group III-nitride located on another portion of the surface, the field-emitters comprising a second group III-nitride;
a layer of the second group-III nitride semiconductor being over the layer of a first group III-nitride and being free of pyramidal surface structures; and
wherein the first and second group III-nitrides have different alloy compositions. - View Dependent Claims (14, 15, 16)
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17. An apparatus, comprising:
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a crystalline substrate having a planar surface;
a mechanically patterned layer of a first group III-nitride being located on the planar surface; and
a layer of a second group III-nitride being located on the mechanically patterned layer of a first group III-nitride, the layer of a second group III-nitride having a thickness of about 2 μ
m or more and having a pattern of columnar holes or trenches therein; and
wherein the holes or trenches form a regular array; and
wherein the first and second group III-nitrides have different alloy compositions. - View Dependent Claims (18, 19, 20)
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Specification