Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device

• US 20050270020A1
• Filed: 06/03/2004
• Published: 12/08/2005
• Est. Priority Date: 06/03/2004
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Peczalski, Andrzej, Wan, Hong, Detry, James F., Witcraft, William F.
• Granted Patent: US 7,126,330 B2
• Time in Patent Office: Days
• US Class Current: 324/247
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/02 Measuring direction or magnitude of magnetic fields or magnetic flux G01R33/20 takes precedence
• CPC Class Codes: G01R 33/0206 Three-component magnetometers
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00

Abstract

An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least a first surface area and at least one sloped surface which is sloped with respect to the first surface area. Two magnetic sensing units could be arranged on the first surface area to provide first and second orthogonal sensing directions, and a third magnetic sensing unit could be arranged on the at least one sloped surface to provide sensing in at least a third sensing direction which is orthogonal to the first and second orthogonal sensing directions. Bias could be applied to the third magnetic sensing unit to cancel a component of the magnetic field sensed by the third magnetic sensing unit so that the third magnetic sensor unit only provides sensing in the third direction.

Claims

1. An integrated three-dimensional generic field sensing device comprising:

a first field sensor unit and a second field sensor unit formed in a common plane on a single substrate; and

a third field sensor unit formed on a surface sloped with respect to the common plane, wherein the single substrate defines the surface sloped with respect to the common plane,

wherein the first field sensor unit is arranged to sense a component of a field in a first direction, the second field sensor unit is arranged to sense a component of the field in a second direction, and the third field sensor unit is arranged to sense a component of the field in a third direction, and

wherein the first, second, and third directions are substantially mutually orthogonal.

2. An integrated three-dimensional magnetic sensing device comprising:

a first magnetic sensor unit and a second magnetic sensor unit formed in a common plane on a single substrate; and

a third magnetic sensor unit formed on a surface sloped with respect to the common plane, wherein the single substrate defines the surface sloped with respect to the common plane,

wherein the first magnetic sensor unit is arranged to sense a component of a magnetic field in a first direction, the second magnetic sensor unit is arranged to sense a component of the magnetic field in a second direction, and the third magnetic sensor unit is arranged to sense a component of the magnetic field in a third direction, and

wherein the first, second, and third directions are substantially mutually orthogonal.

3. The integrated three-dimensional magnetic sensing device of claim 2,

wherein the first magnetic sensor unit comprises a first plurality of magnetoresistive strips and a first set of interconnections to couple the first plurality of magnetoresistive strips as a first electrical circuit,

wherein the second magnetic sensor unit comprises a second plurality of magnetoresistive strips and a second set of interconnections to couple the second plurality of magnetoresistive strips as a second electrical circuit, and

wherein the third magnetic sensor unit comprises a third plurality of magnetoresistive strips and a third set of interconnections to couple the third plurality of magnetoresistive strips as a third electrical circuit.

4. The integrated three-dimensional magnetic sensing device of claim 3,

wherein the first electrical circuit is arranged as a first Wheatstone bridge, wherein the second electrical circuit is arranged as a second Wheatstone bridge, and the third electrical circuit is arranged as a third Wheatstone bridge.

5. The integrated three-dimension magnetic sensing device of claim 2, wherein the first, second, and third plurality of magnetoresistive strips comprise anisotropic magnetoresistive (AMR) material.

6. The integrated three-dimensional magnetic sensing device of claim 2,

wherein the first magnetic sensor unit comprises a first sensor output for outputting a first signal that represents the component of the magnetic field in the first direction,

wherein the second magnetic sensor unit comprises a second sensor output for outputting a second signal that represents the component of the magnetic field in the second direction, and

wherein the third magnetic sensor unit comprises a third sensor output for outputting a signal representing the component of the magnetic field in the third direction.

7. The integrated three-dimensional magnetic sensing device of claim 2, wherein the first magnetic sensor unit comprises a first Hall-effect sensor, the second magnetic sensor unit comprises a second Hall-effect sensor, and the third magnetic sensor unit comprises a third Hall-effect sensor.

8. The integrated three-dimensional magnetic sensing device of claim 2, wherein the first magnetic sensor unit comprises a first giant magnetoresistive sensor, the second magnetic sensor unit comprises a second giant magnetoresistive sensor, and the third magnetic sensor unit comprises a third giant magnetoresistive sensor.

9. The integrated three-dimensional magnetic sensing device of claim 2, wherein the first magnetic sensor unit comprises a first spin tunnel device sensor, the second magnetic sensor unit comprises a second spin tunnel device sensor, and the third magnetic sensor unit comprises a third spin tunnel device sensor.

10. The integrated three-dimensional magnetic sensing device of claim 2, wherein the first magnetic sensor unit comprises a first giant magneto-impedance device sensor, the second magnetic sensor unit comprises a second giant magneto-impedance sensor, and the third magnetic sensor unit comprises a third giant magneto-impedance sensor.

11. An integrated three-dimensional magnetic sensing device comprising:

a first magnetic sensor unit formed on a first surface area of a single substrate;

a second magnetic sensor unit formed on a second surface area of the single substrate; and

a third magnetic sensor unit formed at least in part on a first sloped surface and a second sloped surface, wherein the first and second sloped surfaces are sloped with respect to the first and second surface areas of the single substrate,

wherein the first magnetic sensor unit is arranged to sense a component of a magnetic field in a first direction, the second magnetic sensor unit is arranged to sense a component of the magnetic field in a second direction, and the third magnetic sensor unit is arranged to sense a component of the magnetic field in a third direction, and

wherein the first, second, and third directions are substantially mutually orthogonal.

12. The integrated three-dimensional magnetic sensing device of claim 11, wherein the first and second surface areas of the single substrate are within a common plane.

13. The integrated three-dimensional magnetic sensing device of claim 11, wherein the first and second surface areas of the single substrate are in substantially parallel planes.

14. The integrated three-dimensional magnetic sensing device of claim 11,

wherein the first magnetic sensor unit comprises a first plurality of magnetoresistive strips and a first set of interconnections to couple the first plurality of magnetoresistive strips as a first electrical circuit,

wherein the second magnetic sensor unit comprises a second plurality of magnetoresistive strips and a second set of interconnections to couple the second plurality of magnetoresistive strips as a second electrical circuit, and

wherein the third magnetic sensor unit comprises a third plurality of magnetoresistive strips and a third set of interconnections to couple the third plurality of magnetoresistive strips as a third electrical circuit.

15. The integrated three-dimensional magnetic sensing device of claim 14,

wherein the first electrical circuit is arranged as a first Wheatstone bridge, wherein the second electrical circuit is arranged as a second Wheatstone bridge, and the third electrical circuit is arranged as a third Wheatstone bridge, wherein the third Wheatstone bridge comprises first, second, third, and fourth bridge elements.

16. The integrated three-dimensional magnetic sensing device of claim 15, wherein the third magnetic sensor unit further comprises a biasing means selected to change an angle between a current in the first, second, third, and fourth bridge elements and a direction of magnetization in the first, second, third, and fourth bridge elements to provide linear operation.

17. The integrated three-dimension magnetic sensing device of claim 16, wherein the biasing means comprises conductive straps extending across at least a portion of the first, second, third, and fourth bridge elements at an angle of approximately 45°

.

18. The integrated three-dimensional magnetic sensing device of claim 17,

wherein the third magnetic sensor unit further comprises an output for outputting a signal and the third magnetic sensor unit further senses a component of the magnetic field in a fourth direction, and

wherein the biasing means is arranged to provide a positive bias in the first and third bridge elements and a negative bias in the second and fourth bridge elements in order to cancel the component of the magnetic field in the fourth direction so that the output signal does not include the component of the magnetic field in the fourth direction.

19. The integrated three-dimensional magnetic sensing device of claim 11, further comprising third and fourth surfaces sloped with respect to the first and second surface areas of the single substrate;

wherein the third magnetic sensor unit comprises a first magnetoresistive strip at the first sloped surface, a second magnetoresistive strip at the second sloped surface, a third magnetoresistive strip at the third sloped surface, and a fourth magnetoresistive strip at the fourth sloped surface, and interconnections to couple first, second, third, and fourth magnetoresistive strips as an electrical circuit.

20. The integrated three-dimensional magnetic sensing device of claim 19, wherein the third magnetic sensor unit further comprises a first biasing means selected to change an angle between a current in the first, second, third, and fourth bridge elements and a direction of magnetization in the first, second, third, and fourth bridge elements to provide linear operation.

21. The integrated three-dimensional magnetic sensing device of claim 20 further comprising a second biasing means selectable to change the direction of magnetization in the first, second, third, and fourth bridge elements.

22. The integrated three-dimensional magnetic sensing device of claim 21,

wherein the first biasing means comprises conductive straps at least a portion of the first, second, third, and fourth bridge elements at an angle of approximately 45°

,

wherein the second biasing means comprises a conductor in proximity to the first, second, third, and fourth bridge elements, and

wherein the conductor comprises first and second ends, and

wherein the conductor is coupled to at least one power source so that conductor can pass current in a direction from the first end to the second end and in a direction from the second end to the first end.

23. An integrated three-dimensional magnetic sensing device comprising:

a monolithic substrate defining (i) a plane of the sensing device, (ii) a first surface parallel to the plane, and (iii) second and third surfaces sloped with respect to the first surface;

a first magnetic sensor formed at the first surface for producing a first output signal that represents a magnetic field component in a first direction, wherein the first direction is substantially parallel to the plane;

a second magnetic sensor formed at the first surface for producing a second output signal that represents a magnetic field component in a second direction, wherein the second direction is substantially parallel to the plane and wherein the second direction is substantially orthogonal to the first direction; and

a third magnetic sensor formed at least in part on the second and third surfaces for producing a third output signal that represents a magnetic field component in a third direction, wherein the third direction is substantially orthogonal to the first surface.

24. The integrated three-dimensional magnetic sensing device of claim 23,

wherein the first magnetic sensor comprises a first plurality of magnetoresistive strips arranged as a first bridge circuit;

wherein the second magnetic sensor comprises a second plurality of magnetoresistive strips arranged as a second bridge circuit; and

wherein the third magnetic sensor comprises a third bridge circuit having at least a first magnetoresistive strip at the second surface and at least a second magnetoresistive strip at the third surface.

25. The integrated three-dimensional magnetic sensing device of claim 24, wherein the first, second, and third bridge circuits are arranged as Wheatstone bridge circuits.

26. A method of fabricating an integrated three-dimensional magnetic sensing device, the method comprising:

forming a first magnetic sensor unit on a first surface area of a single substrate;

forming a second magnetic sensor unit on a second surface area of the single substrate; and

forming a third magnetic sensor unit on at least one sloped surface of the single substrate, wherein the at least one sloped surface is sloped with respect to the first and second surface areas,

wherein forming the first, second, and third magnetic sensor units comprises arranging the first, second, and third magnetic sensor units respectively so that the first, second, and third magnetic sensor units sense magnetic field components in mutually orthogonal directions.

27. The method of claim 26, wherein forming the first magnetic sensor unit further comprises depositing a first set of magnetoresistive strips on the first surface area,

wherein forming the second magnetic sensor unit further comprises depositing a second set of magnetoresistive strips on the second surface area, and

wherein forming the third magnetic sensor unit further comprises depositing a third set of magnetoresistive strips on the at least one sloped surface.

28. The method of claim 27, wherein forming the first magnetic sensor unit further comprises depositing a first set of conductive straps on the first set of magnetoresistive strips,

wherein forming the second magnetic sensor unit further comprises depositing a second set of conductive straps on the second set of magnetoresistive strips,

wherein forming the third magnetic sensor unit further comprises depositing a third set of conductive straps on the third set of magnetoresistive strips, and

wherein the first, second, and third sets of conductive straps are arranged to form angles of approximately 45 degrees with respect to the first, second, and third sets of magnetoresistive strips respectively, and

wherein the first, second, and third sets of conductive straps provide a linear operating range for the first, second, and third sets of magnetoresistive strips.

29. The method of claim 28, further comprising arranging a conductor in proximity to the third magnetic sensor unit, wherein passing a current through the conductor aligns a magnetization vector of the third magnetic sensor unit.

30. The method of claim 29, further comprising coupling interconnections to the first set of magnetoresistive strips to form a first resistor bridge network, coupling interconnections to the second set of magnetoresistive strips to form a second resistor bridge network, and coupling interconnections to the third set of magnetoresistive strips to form a third resistor bridge network.

31. The method of claim 30, further comprising etching the single substrate to form the at least one sloped surface.

32. The method of claim 31, wherein etching the single substrate comprises etching a single semiconductor chip via KOH etching.