Tuneable laser

• US 20050271089A1
• Filed: 05/15/2003
• Published: 12/08/2005
• Est. Priority Date: 05/15/2002
• Status: Abandoned Application

• Current Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Original Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Inventors: Robbins, David James, Holden, Anthony James, Zakhleniuk, Nickolay
• Application Number:
  US10/514,670
• Publication Number:
  US 20050271089A1
• Time in Patent Office: Days
• US Class Current: 372/20
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/06256 with DBR-structure
• CPC Class Codes: H01S 5/3412 quantum box or quantum dash

Abstract

A tuneable laser including; a light creating section to generate light, the light creating section including a waveguide, and a tuneable section in which there is a waveguide connected to the waveguide in the light creating section, characterised in that the tuneable section waveguide contains a plurality of quantum dots.

Claims

1. A tuneable laser, comprising a light creating section to generate light, the light creating section including a waveguide, and a tuneable section in which there is a waveguide connected to the waveguide in the light creating section, wherein the tuneable section includes a plurality of quantum dots.

2. A tuneable laser as claimed in claim 1, wherein the plurality of quantum dots are located in the waveguide of the tuneable section.

3. A tuneable laser as claimed in claim 1, wherein the laser is tuned by current injection utilizing the free plasma effect and the plurality of quantum dots have enhanced polarisability compared to a material of the waveguide surrounding the quantum dots.

4. A tuneable laser as claimed in claim 1, wherein the laser is tuned by electro-modification of a refractive index of a material in one of the waveguides and the plurality of quantum dots enhance the electro-optical effect within the waveguide.

5. A tuneable laser as claimed in claim 1, wherein the tuneable section is a tuning section of the laser.

6. A tuneable laser as claimed in claim 5, wherein the tuneable section comprises a distributed Bragg reflector.

7. A tuneable laser as claimed in claim 6, wherein the distributed Bragg reflector is formed between two layers of different refractive indices and at least some quantum dots of the plurality of quantum dots are provided in one of the layers between which the Bragg grating is formed.

8. A tuneable laser as claimed in claim 1, wherein the tuneable laser incorporates a phase change section and the phase change section is a tuneable section.

9. A tuneable laser as claimed in claim 1, wherein at least one of the waveguides is formed of a III-V semiconductor material.

10. A tuneable laser as claimed in claim 9, wherein the III-V semiconductor material is based on a system selected from one of GaAs, InAs based materials and InP based materials.

11. A tuneable laser as claimed in claim 1, wherein the laser is a three or four section laser, or has more than four sections.

12. A tuneable laser as claimed in claim 1, wherein the plurality of quantum dots are self-assembled quantum dots.

13. A tuneable laser as claimed in claim 1, wherein any the self-assembled quantum dots are formed of an InAs based material in a host GaAs based semiconductor material.

14. A tuneable laser as claimed in claim 13, wherein the host material is formed on a GaAs substrate.

15. A tuneable laser as claimed in claim 12, wherein the self-assembled quantum dots are formed of an InGaAs based material in a host GaAs based semiconductor material.

16. A tuneable laser as claimed in claim 15, wherein the host material is formed on a GaAs substrate.

17. A tuneable laser as claimed in claim 12, wherein the self-assembled quantum dots are formed of an InAs based material in a host InGaAsP based semiconductor material.

18. A tuneable laser as claimed in claim 17, wherein the host material is formed on an InP substrate.

19. A tuneable laser as claimed claim 12, wherein the self-assembled quantum dots are formed of an InGaAs based material in a host InGaAsP based semiconductor material.

20. A tuneable laser as claimed in claim 19, wherein the host material is formed on an InP substrate.

21. A tuneable laser as claimed in claim 1, wherein the plurality of quantum dots are formed by a chemical etching process.

22. A tuneable laser as claimed in claim 1, further comprising a plurality of layers of quantum dots.

23. A tuneable laser, comprising a light creating section to generate light, a tuneable section and a phase change section, wherein the tuneable section and the phase change section have waveguides connected to a waveguide of the light creating section, wherein the waveguide of the phase change section includes a plurality of quantum dots.

24. In a tuneable laser, comprising a gain section having a waveguide, a tuneable section having a waveguide and a phase change section having a waveguide, wherein a material of the waveguide of the tuning section has a refractive index n, which has a fixed background part n₀ and a part Δ

n which is variable under an external influence, wherein the amount of variation Δ

n is a function of the value of the external influence, the improvement comprises decoupling the value of Δ

n from n₀ by incorporating quantum dots into the waveguide.

25. A tuneable laser as claimed in claim 24, wherein the external influence is one of heat, injected current or applied field.

26. A tuneable laser as claimed in claim 24, wherein the waveguide is a rib waveguide.