Multi-station deposition apparatus and method
First Claim
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1. A method of depositing a material on a wafer in a deposition chamber having a plurality of deposition stations comprising:
- (a) forming a gas curtain between deposition stations;
(b) positioning a wafer on one of a plurality of wafer supports in a first deposition position;
(c) introducing a first deposition gas proximate said first wafer;
(d) rotating the wafer into a second deposition position; and
(e) introducing a second deposition gas proximate said first wafer.
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Abstract
A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
85 Citations
12 Claims
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1. A method of depositing a material on a wafer in a deposition chamber having a plurality of deposition stations comprising:
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(a) forming a gas curtain between deposition stations;
(b) positioning a wafer on one of a plurality of wafer supports in a first deposition position;
(c) introducing a first deposition gas proximate said first wafer;
(d) rotating the wafer into a second deposition position; and
(e) introducing a second deposition gas proximate said first wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 12)
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9. A method of processing a substrate comprising:
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supplying a plurality of gases to a multi-zone nozzle, where a different gas is supplied to each zone in a plurality of zones; and
disbursing gas upon a substrate from each of the zones as the substrate moves beneath the multi-zone nozzle, where each of the gases contacts the substrate in a sequential order. - View Dependent Claims (10, 11)
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Specification