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Optical proximity correction method utilizing phase-edges as sub-resolution assist features

  • US 20050271953A1
  • Filed: 07/26/2005
  • Published: 12/08/2005
  • Est. Priority Date: 09/28/2001
  • Status: Active Grant
First Claim
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1. A photolithography mask for optically transferring a pattern formed in said mask onto a substrate, said mask comprising:

  • a plurality of resolvable features to be printed on said substrate; and

    at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge, wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.

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