Massively parallel atomic layer deposition/chemical vapor deposition system
First Claim
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1. An apparatus comprising:
- a load lock unit to receive a material and to load the material into a processing chamber to deposit a film layer thereon; and
a plurality of vertically stacked deposition reactors to receive the material from said load lock unit to place the material in one of said reactors, said plurality of stacked deposition reactors having a low vertical profile relative to length and width dimensions, but in which the reactors have separate internal gas inlet at one vertical end and separate internal exhaust at an opposite vertical end of the processing chambers of said reactors to provide a generally axi-symmetric vertical gas flow across the material when the material is placed in one of the processing chambers for processing.
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Abstract
A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.
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Citations
19 Claims
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1. An apparatus comprising:
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a load lock unit to receive a material and to load the material into a processing chamber to deposit a film layer thereon; and
a plurality of vertically stacked deposition reactors to receive the material from said load lock unit to place the material in one of said reactors, said plurality of stacked deposition reactors having a low vertical profile relative to length and width dimensions, but in which the reactors have separate internal gas inlet at one vertical end and separate internal exhaust at an opposite vertical end of the processing chambers of said reactors to provide a generally axi-symmetric vertical gas flow across the material when the material is placed in one of the processing chambers for processing. - View Dependent Claims (2, 3)
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- 4. The apparatus of claim I wherein materials are to be loaded into individual reactors and processed separately in the individual reactors.
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7. An apparatus to perform atomic layer deposition or chemical vapor deposition comprising:
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a load lock unit to receive a plurality of substrates and to load the substrates into processing chambers to deposit a film layer thereon; and
a plurality of vertically stacked deposition reactors to receive the substrates from said load lock unit to place the substrate in individual ones of said reactors, said plurality of stacked deposition reactors having a low vertical profile relative to length and width dimensions, but in which the reactors have separate internal gas inlet at a top of the processing chamber and separate internal exhaust at a bottom of the processing chamber to provide a generally axis-symmetric vertical gas flow across the substrates when the substrates are placed in the processing chambers of individual reactors, the individual reactors having horizontally disposed passages to the internal gas inlet and internal exhaust, wherein the inlet passages and exhaust passages are integrated therein. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification