Wafer clean process
First Claim
1. A method for cleaning a wafer, comprising:
- providing a cleaning fluid;
dissolving an ion-forming gas in said cleaning fluid;
rotating said wafer; and
dispensing said cleaning fluid onto said wafer.
1 Assignment
0 Petitions
Accused Products
Abstract
A novel process for cleaning a semiconductor wafer is disclosed. The process of the invention reduces or eliminates charge-up damage caused by friction which is generated between the wafer and rinsing water or other fluid as the wafer is rotated during the cleaning process. In one embodiment of the invention, the wafer is placed on a rotatable chuck or support inside a cleaning chamber. An ion-forming gas is introduced into the chamber as the cleaning fluid is dispensed onto the wafer. The gas increases the electrical conductivity of the cleaning fluid by forming ions in the fluid, thereby reducing or eliminating cleaning fluid charge-up and preventing breakdown of dielectric materials and/or corrosion of metal on the wafer. In another embodiment, the gas is dissolved in the cleaning fluid, which is dispensed on the rotating wafer. In still another embodiment, the cleaning fluid is heated and then dispensed onto the wafer.
25 Citations
21 Claims
-
1. A method for cleaning a wafer, comprising:
-
providing a cleaning fluid;
dissolving an ion-forming gas in said cleaning fluid;
rotating said wafer; and
dispensing said cleaning fluid onto said wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. A method for cleaning a wafer, comprising:
-
applying a solvent to said wafer;
providing a cleaning fluid;
dissolving an ion-forming gas in said cleaning fluid;
rotating said wafer; and
dispensing said cleaning fluid onto said wafer. - View Dependent Claims (18)
-
-
19. A method for cleaning a wafer, comprising:
-
providing deionized water;
providing a viscosity of less than about 500 μ
Pa s to said deionized water;
rotating said wafer; and
dispensing said deionized water onto said wafer. - View Dependent Claims (20, 21)
-
Specification