Methods for wet cleaning quartz surfaces of components for plasma processing chambers

• US 20050274396A1
• Filed: 06/09/2004
• Published: 12/15/2005
• Est. Priority Date: 06/09/2004
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Huang, Tuochuan, Liu, Shenjian, Kuo, Jack, Shih, Hong, Morel, Bruno, Chen, Anthony, Outka, Duane
• Application Number:
  US10/863,360
• Publication Number:
  US 20050274396A1
• Time in Patent Office: Days
• US Class Current: 134/29
• CPC Class Codes: C23C 16/4407 Cleaning of reactor or reactor parts by using wet or mechanical methods
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts

Abstract

Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.

Claims

1. A method for wet cleaning at least one quartz surface of a component for a plasma processing chamber in which semiconductor substrates are processed, the method comprising:

a) contacting the at least one quartz surface of the component with at least one organic solvent effective to degrease and remove organic contaminants from the quartz surface;

b) after a), contacting the quartz surface with a weak basic solution which is effective to remove organic and metallic contaminants from the quartz surface;

c) after b), contacting the quartz surface with a first acid solution which is effective to remove metallic contaminants from the quartz surface;

d) after c), contacting the quartz surface with a second acid solution comprising hydrofluoric acid and nitric acid to remove metal contaminants from the quartz surface; and

e) optionally repeating d) at least once.

2. The method of claim 1, wherein a) comprises:

contacting the quartz surface with isopropyl alcohol by wiping or immersion;

then rinsing the quartz surface;

then contacting the quartz surface with acetone by wiping or immersion; and

then ultrasonically cleaning the component in deionized water.

Patent

3. The method of claim 1, wherein the basic solution comprises ammonium hydroxide, hydrogen peroxide and water in a respective volume ratio of about 1:

1;

2-8 or 1;

2-7;

8.

4. The method of claim 1, wherein the first acid solution comprises hydrochloric acid.

5. The method of claim 1, wherein:

the second acid solution comprises from about 1 wt % to about 5 wt % hydrofluoric acid and from about 5 wt % to about 20 wt % nitric acid, or about 1 wt % of hydrofluoric acid and about 10 wt % of nitric acid;

d) comprises immersing the component in the second acid solution for from about 10 minutes to about 20 minutes; and

e) comprises repeating d) twice such that the component is immersed in the second acid solution for a total of from about 30 to about 60 minutes.

6. The method of claim 1, further comprising after e):

rinsing the component with ultra-pure water;

then ultrasonically cleaning the component with ultra-pure water;

then rinsing component with ultra-pure water;

then drying the component at an elevated temperature; and

then packaging the component.

7. The method of claim 1, further comprising, prior to a), pre-cleaning the component by:

spraying the component with high-pressure deionized water; and

drying the component.

8. The method of claim 1, wherein the amounts (units:

x10¹⁰ atoms/cm²) of the following elements on the as-cleaned quartz surface are;

Al<

300;

Ca≦

95;

Cr≦

50;

Cu≦

50;

Fe≦

65;

Li≦

50;

Mg≦

50;

Ni≦

50;

K≦

100;

Na≦

100;

Ti≦

60, Zn≦

50, Co≦

30 and Mo≦

30.

9. The method of claim 1, wherein the component is selected from the group consisting of a dielectric window, gas injector, view port, plasma confinement ring, focus ring, edge ring, gas distribution plate and baffle.

10. A component comprising at least one quartz surface that has been wet cleaned by the method according to claim 1.

23. A plasma processing chamber comprising at least one component including at least one quartz surface that has been cleaned by the method according to claim 1, the quartz surface being exposed to plasma and/or process gases in the plasma processing chamber.

24. The plasma processing apparatus of claim 23, wherein the component is selected from the group consisting of a dielectric window, gas injector, view port, plasma confinement ring, focus ring, edge ring, gas distribution plate and baffle.

25. A method of processing a semiconductor substrate in a plasma processing chamber, comprising:

cleaning at least one component having at least one quartz surface by the method according to claim 1;

placing the at least one as-cleaned component in the plasma processing chamber such that the component is exposed to plasma and/or process gas, the plasma processing chamber containing a semiconductor substrate;

energizing a process gas into the plasma state remote from or inside the plasma processing chamber and processing the semiconductor substrate.

11. A method for wet cleaning at least one quartz surface of a component for a plasma processing chamber in which semiconductor substrates are processed, the method comprising:

a) contacting the at least one quartz surface of the component with isopropyl alcohol and then with acetone to degrease and remove organic contaminants from the quartz surface;

b) after a), contacting the quartz surface with a solution comprising ammonium hydroxide and hydrogen peroxide to remove organic and metallic contaminants from the quartz surface;

c) after b), contacting the quartz surface with a first acid solution comprising hydrochloric acid to remove metallic contaminants from the quartz surface;

d) after c), contacting the quartz surface with a mixed second acid solution comprising hydrofluoric acid and nitric acid to remove metallic contaminants from the quartz surface; and

e) optionally repeating d) at least once.

12. The method of claim 11, wherein:

the second acid solution comprises from about 1 wt % to about 5 wt % hydrofluoric acid and from about 5 wt % to about 20 wt % nitric acid, or about 1 wt % of hydrofluoric acid and about 10 wt % of nitric acid;

d) comprises immersing the component in the second acid solution for from about 10 minutes to about 20 minutes; and

e) comprises repeating d) twice, wherein the component is immersed in the second acid solution for a total of from about 30 to about 60 minutes for the three immersions.

13. The method of claim 11, further comprising after e):

rinsing the component with ultrapure water;

then ultrasonically cleaning the component with ultrapure water;

then rinsing component with ultrapure water;

then drying the component at an elevated temperature; and

then packaging the component.

14. The method of claim 11, further comprising prior to a) pre-cleaning the component by:

spraying the component with high-pressure deionized water; and

then drying the component.

15. The method of claim 11, wherein the component is selected from the group consisting of a dielectric window, gas injector, view port, plasma confinement ring, focus ring, edge ring, gas distribution plate and baffle.

16. The method of claim 11, wherein the amounts (units:

x10¹⁰ atoms/cm²) of the following elements on the as-cleaned quartz surface are;

(x10¹⁰ atoms/cm²);

Al≦

300;

Ca≦

95;

Cr≦

50;

Cu≦

50;

Fe≦

65;

Li≦

50;

Mg≦

50;

Ni≦

s50;

K≦

100;

Na≦

100;

Ti≦

60, Zn≦

50, Co≦

30 and Mo≦

30.

17. A component comprising at least one quartz surface that has been wet cleaned by the method according to claim 11.

18. A component for a plasma processing chamber in which semiconductor substrates are processed, the component comprising at least one quartz surface on which the amounts of Al, Ca, Cr, Cu, Fe, Li, Mg, Ni, K, Na, Ti, Zn, Co and Mo are as follows (x10¹⁰ atoms/cm²):

Al≦

300;

Ca≦

95;

Cr≦

50;

Cu≦

50;

Fe≦

65;

Li≦

50;

Mg≦

50;

Ni≦

50;

K≦

100;

Na≦

100;

Ti≦

60, Zn≦

50, Co≦

30 and Mo≦

30.

19. The component of claim 18, wherein the component is a baffle for a resist stripping chamber, the baffle includes an inner portion and a peripheral portion, wherein the inner portion includes an opaque central projection and a plurality of concentric rows of the gas passages surrounding the central projection, the central projection includes an upper surface and a plurality of through passages oriented at an acute angle relative to the upper surface such that the through passages extend in radial outward directions toward the peripheral portion.

20. The component of claim 19, further comprising a liner adapted to be supported by a plurality of liner supports on an upper surface of the baffle adjacent to a cover of the resist stripping chamber such that a plenum is defined between a bottom surface of the liner and an upper surface of the baffle when the baffle is disposed in the resist stripping chamber, the plenum being in fluid communication with the remote plasma source and the resist stripping chamber.

21. The component of claim 18, wherein the component is selected from the group consisting of a dielectric window, gas injector, gas injection ring, view port, plasma confinement ring, focus ring, edge ring, gas distribution plate and baffle.

22. A resist stripping apparatus, comprising:

a resist stripping chamber;

a remote plasma source operable to generate a plasma and introduce reactive species into the resist stripping chamber; and

a baffle according to claim 19 disposed in the resist stripping chamber.