Light emitting diode and method of making the same

• US 20050274971A1
• Filed: 06/10/2004
• Published: 12/15/2005
• Est. Priority Date: 06/10/2004
• Status: Abandoned Application

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Chang, Chih-Sung, Wang, Pai-Hsiang, Chen, Tzer-Perng
• Application Number:
  US10/866,472
• Publication Number:
  US 20050274971A1
• Time in Patent Office: Days
• US Class Current: 257/100
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/641 characterized by the materials

Abstract

A light emitting diode (LED) and a method of making the same are disclosed. The present invention is featured in that the LED comprises a transparent heat-conductive glue, a reflective layer, and a carrier, etc, wherein the transparent heat-conductive glue is used to adhere the epitaxial structure and the carrier of the LED; the reflective layer can make the light emitted by the epitaxial structure to be reflected more efficiently; and the carrier is used to enhance the heat-dissipation effect of the LED. Moreover, the transparent heat-conductive glue and the reflective layer can be replaced with one single adhesive reflective layer having functions of adhesion and reflection simultaneously.

Claims

1. A light emitting diode (LED), comprising:

a carrier used to transfer heat generated by the LED, wherein a reflective layer is located on the carrier; and

an epitaxial structure disposed on the carrier by a transparent heat-conductive glue, wherein the epitaxial structure comprises a plurality of III-V compound semiconductor epitaxial layers, wherein light is generated when a current enters the LED.

2. The LED according to claim 1, wherein the material of the carrier is selected from a group consisting of copper, silver, aluminum, and gold.

3. The LED according to claim 1, wherein the material of the carrier is selected from a group consisting of silicon, GaN, AlN, diamond, and SiC.

4. The LED according to claim 1, wherein the material of the reflective layer is selected from a group consisting of silver, gold, and aluminum.

5. The LED according to claim 1, further comprising a substrate located between the epitaxial structure and the transparent heat-conductive glue.

6. The LED according to claim 5, wherein the thickness of the substrate is less than 50 μ

m.

7. A LED, comprising:

a carrier used to transfer heat generated by the LED;

an adhesive reflective layer located on the carrier; and

an epitaxial structure disposed on the adhesive reflective layer, wherein the epitaxial structure comprises a plurality of III-V compound semiconductor epitaxial layers, wherein light is generated when a current enters the LED.

8. The LED according to claim 7, wherein the adhesive reflective layer is made of metal.

9. The LED according to claim 7, wherein the material of the carrier is selected from a group consisting of copper, silver, aluminum, and gold.

10. The LED according to claim 7, wherein the material of the carrier is selected from a group consisting of silicon, GaN, AlN, diamond, and SiC.

11. The LED according to claim 7, further comprising a substrate located between the epitaxial structure and the adhesive reflective layer.

12. The LED according to claim 11, wherein the thickness of the substrate is less than 50 μ

m.

13. A method of making a LED, comprising:

providing a carrier used to transfer heat generated by the LED;

providing an epitaxial structure comprising a plurality of III-V compound semiconductor epitaxial layers, wherein light is generated when a current enters the LED; and

using an adhesive reflective layer to adhere the carrier and the epitaxial structure.

14. The method of making the LED according to claim 13, wherein the step of providing the epitaxial structure further comprises providing a substrate, wherein a portion of a thickness of the substrate is polished or etched;

the epitaxial structure is located on the substrate; and

afterwards, the substrate is located between the epitaxial structure and the adhesive reflective layer.

15. The method of making the LED according to claim 14, wherein the thickness of the substrate is less than 50 μ

m.

16. The method of making the LED according to claim 13, wherein the material of the carrier is selected from a group consisting of silicon, GaN, AlN, diamond, and SiC.

17. The method of making the LED according to claim 13, wherein the material of the carrier is selected from a group consisting of copper, silver, aluminum, and gold.

18. The method of making the LED according to claim 13, wherein the adhesive reflective layer is made of metal.

19. The method of making the LED according to claim 13, wherein the adhesive reflective layer further comprises a reflective layer and a transparent heat-conductive glue;

the reflective layer is located on the carrier; and

the transparent heat-conductive glue is used to adhere the carrier and the epitaxial structure.

20. The method of making the LED according to claim 19, wherein the material of the reflective layer is selected from a group consisting of silver, gold, and aluminum.