Voltage level translator circuitry

• US 20050275389A1
• Filed: 06/09/2004
• Published: 12/15/2005
• Est. Priority Date: 06/09/2004
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Cordoba, Michael V.
• Granted Patent: US 7,071,730 B2
• Time in Patent Office: Days
• US Class Current: 323/282
• CPC Class Codes: H03K 3/02335 provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
• CPC Class Codes: H03K 3/35613 the input circuit having a differential configuration

Abstract

Circuitry and methods for implementing voltage level translators at relatively low source voltages are provided. The circuitry and methods utilize voltage protection circuitry to ensure that voltages in the circuitry do not exceed predetermined thresholds that, if exceeded, would cause malfunction. In one embodiment of the invention, voltage level translation circuitry is provided to boost voltage from a source voltage (e.g., V_CC) to a voltage that is higher in potential (e.g., V_CCP) than the source voltage. In another embodiment of the invention, voltage level translation circuitry is provided to pull a ground voltage down to a potential (e.g., V_BB) that is lower in voltage than the ground voltage.

Claims

1. A voltage translator, comprising:

an output node; and

circuitry that receives an input signal having a voltage potential, said circuitry operative to provide a HIGH voltage level and a LOW voltage level to said output node in response to the potential of said input signal, said circuitry comprising;

a plurality of transistors that selectively couple said output node to said HIGH voltage level and said LOW voltage level; and

voltage protection circuitry coupled to a portion of said plurality of transistors that prevents voltage being applied to said portion from exceeding a predetermined source voltage level.

2. The translator defined in claim 1, wherein said predetermined source voltage level is a voltage of at least 0.4 volts.

3. The translator defined in claim 1, wherein said predetermined source voltage level is a voltage that ranges from about 0.4 volts to about 0.8 volts.

4. The translator defined in claim 1, wherein said HIGH voltage level is a voltage greater in voltage than said predetermined source voltage level, and wherein said LOW voltage level is substantially equal to a ground voltage level.

5. The translator defined in claim 1, wherein said LOW voltage level is a voltage less than a ground voltage level, and wherein said HIGH voltage level is substantially equal to said predetermined source voltage level.

6. The translator defined in claim 1, wherein said voltage protection circuitry comprises at least one transistor.

7. The translator defined in claim 1, wherein said portion of said plurality of transistors are thin gate oxide transistors.

8. The translator defined in claim 1, wherein the voltage being applied to said portion of said plurality of transistors is voltage selected from the group consisting of drain-to-source voltage, source-to-drain voltage, gate-to-source voltage, source-to-gate voltage, drain-to-source voltage, source-to-drain voltage, and any combination thereof.

9. The translator defined in claim 1 further comprising:

a second output node that is selectively coupled to said HIGH voltage level and said LOW voltage level in response to an inverse of the potential of said input signal;

first buffer circuitry coupled to said output node;

second buffer circuitry coupled to said second output node; and

wherein said first and second buffer circuitry are operative to selectively couple said HIGH voltage level and said LOW voltage level to utilization circuitry.

10. A method for translating a voltage using a voltage level translator operating at a predetermined source voltage level, said method comprising:

receiving an input signal having a voltage potential;

selectively coupling an output node to either a HIGH voltage level and a LOW voltage level in response to the potential of said input signal, said coupling being performed by a plurality of transistors; and

preventing the voltage being applied to a portion of said plurality of transistors from exceeding said predetermined source voltage level.

11. The method defined in claim 10, wherein said predetermined source voltage level is a voltage of at least 0.4 volts.

12. The method defined in claim 10, wherein said predetermined source voltage level is voltage is a voltage that ranges from about 0.4 volts to about 0.8 volts.

13. The method defined in claim 10, wherein said HIGH voltage level is a voltage greater in voltage than said predetermined source voltage level, and wherein said LOW voltage level is substantially equal to a ground voltage level.

14. The method defined in claim 10, wherein said LOW voltage level is a voltage less than a ground voltage level, and wherein said HIGH voltage level is substantially equal to said predetermined source voltage level.

15. The method defined in claim 10, wherein said portion of said plurality of transistors are thin gate oxide transistors.

16. The method defined in claim 10, wherein the voltage being applied to said portion of said plurality of transistors is voltage selected from the group consisting of drain-to-source voltage, source-to-drain voltage, gate-to-source voltage, source-to-gate voltage, drain-to-source voltage, source-to-drain voltage, and any combination thereof.

17. The method defined in claim 10 further comprising:

buffering said HIGH voltage level and said LOW voltage level being coupled to said output node.

18. A system comprising:

a processor;

a processor controller coupled to said processor;

utilization circuitry coupled to said processor controller via voltage level translator circuitry, wherein said circuitry operating at a predetermined source voltage level and is operative to;

receive an input signal having a voltage potential from said processor controller;

selectively provide an output signal having either a HIGH voltage level or a LOW voltage level to said utilization circuitry in response to the potential of said input signal; and

prevent the voltage being applied to a portion of said circuitry from exceeding said predetermined source voltage level.

19. The system defined in claim 18, wherein said utilization circuitry is memory.

20. An integrated circuit that is supplied with a predetermined source voltage level, comprising

an output node;

input circuitry that receives an input signal having a voltage potential;

inverse input circuitry that receives an inverse of said input signal;

translation circuitry coupled to said input circuitry, said inverse input circuitry, said output node, and a voltage source having a predetermined HIGH voltage level, wherein said input circuitry, said inverse input circuitry, and said translation circuitry are operative to selectively couple said output node to a ground voltage level and said predetermined HIGH voltage level;

first voltage protection circuitry coupled to said input circuitry., said translation circuitry, and said predetermined source voltage level, and being operative to prevent the voltage being applied to a first portion of said translation circuitry and said input circuitry from exceeding said predetermined source voltage level; and

second voltage protection circuitry coupled to said inverse input circuitry, said translation circuitry, and said predetermined source voltage level, and being operative to prevent the voltage being applied to a second portion of said translation circuitry and said inverse input circuitry from exceeding said predetermined source voltage level.

21. The integrated circuit defined in claim 20, wherein said output node is coupled to said predetermined HIGH voltage level when said input signal has a voltage potential that is substantially equal to said predetermined source voltage level.

22. The integrated circuit defined in claim 20, wherein said output node is coupled to said ground voltage level when said input signal has a voltage potential that is substantially equal to said ground voltage level.

23. The integrated circuit defined in claim 20, wherein said first voltage protection circuitry is a transistor and wherein said second voltage protection circuitry is a transistor.

24. The integrated circuit defined in claim 20, wherein said predetermined source voltage level is V_CC.

25. The integrated circuit defined in claim 20, wherein the voltage being applied to said first portion and said input circuitry is a voltage selected from the group consisting of drain-to-source voltage, source-to-drain voltage, gate-to-source voltage, source-to-gate voltage, drain-to-source voltage, source-to-drain voltage, and any combination thereof.

26. The integrated circuit defined in claim 20, wherein the voltage being applied to said second portion and said inverse input circuitry is a voltage selected from the group consisting of drain-to-source voltage, source-to-drain voltage, gate-to-source voltage, source-to-gate voltage, drain-to-source voltage, source-to-drain voltage, and any combination thereof.

27. The integrated circuit defined in claim 20, wherein said predetermined HIGH voltage level is a voltage higher in potential than said predetermined source voltage level.

28. Voltage level translation circuitry, comprising:

a first output node;

a second output node;

a cross-coupled circuitry coupled to a predetermined voltage level and to said first and second output nodes;

first and second input circuitry that receive an input signal having a voltage potential ranging from a LOW voltage level to a HIGH voltage level, said first and second input circuitry operating in connection with said cross-coupled circuitry to selectively couple said first and second output nodes to said predetermined voltage level and said LOW voltage level;

wherein said first input circuitry comprises;

a first transistor having its drain coupled to said second output node, its gate connected to said predetermined voltage level, and its source coupled to a first connection node;

a second transistor having its drain connected to said first connection node, its gate coupled to receive said input signal, and its source coupled to ground; and

a third transistor having its source coupled to said predetermined voltage level, its gate coupled to receive said input signal, and its drain is coupled to said first connection node, said third transistor operative to maintain said first connection node at said predetermined voltage level when said input signal is at said LOW voltage level; and

wherein said second input circuitry comprises;

a fourth transistor having its drain coupled to said first output node, its gate connected to said predetermined voltage level, and its source coupled to a second connection node;

a fifth transistor having its drain connected to said second connection node, its gate coupled to receive the inverse of said input signal, and its source coupled to ground; and

an sixth transistor having its source coupled to said predetermined voltage level, its gate coupled to receive the inverse of said input signal, and its drain is coupled to said second connection node, said sixth transistor operative to maintain said second connection node at said predetermined voltage level when said input signal is at said HIGH voltage level.

29. The circuitry defined in claim 28, wherein said first, second, fourth, and fifth transistors comprise n-channel transistors, and wherein said third and sixth transistors comprise p-channel transistors.

30. The circuitry defined in claim 28, wherein said cross-coupled circuitry comprises:

a seventh transistor having its source coupled to said predetermined voltage level, its gate coupled to said first output node, and its drain coupled to said second output node; and

an eighth transistor having its source coupled to said predetermined voltage level, its gate coupled to said second output node, and its drain coupled to said first output node.

31. The circuitry defined in claim 28, wherein said first, second, third, fourth, fifth, and sixth transistors comprise thin gate oxide transistors.

32. The circuitry defined in claim 28, wherein said HIGH voltage level is V_CC.

33. The circuitry defined in claim 28, wherein said predetermined voltage level is V_CCP.

34. An integrated circuit that is supplied with a predetermined source voltage level, comprising

an output node;

input circuitry that receives an input signal h00aving a voltage potential;

inverse input circuitry that receives an inverse of said input signal;

translation circuitry coupled to said input circuitry, said inverse input circuitry, said output node, and a voltage source having a predetermined LOW voltage level, wherein said input circuitry, said inverse input circuitry, and said translation circuitry are operative to selectively couple said output node to a said predetermined source voltage level and said predetermined LOW voltage level;

first voltage protection circuitry coupled to said input circuitry, said translation circuitry, and ground, and being operative to prevent the voltage being applied to a first portion of said translation circuitry and said input circuitry from exceeding said predetermined source voltage level; and

second voltage protection circuitry coupled to said inverse input circuitry, said translation circuitry, and ground, and being operative to prevent the voltage being applied to a second portion of said translation circuitry and said inverse input circuitry from exceeding said predetermined source voltage level.

35. The integrated circuit defined in claim 34, wherein said output node is coupled to said predetermined source voltage level when said input signal has a voltage potential that is substantially equal to said predetermined source voltage level.

36. The integrated circuit defined in claim 34, wherein said output node is coupled to said predetermined LOW voltage level when said input signal has a voltage potential that is substantially equal to a ground voltage level.

37. The integrated circuit defined in claim 34, wherein said first voltage protection circuitry is a transistor and wherein said second voltage protection circuitry is a transistor.

38. The integrated circuit defined in claim 34, wherein said predetermined source voltage level is V_CC.

39. The integrated circuit defined in claim 34, wherein the voltage being applied to said first portion and said input circuitry is a voltage selected from the group consisting of drain-to-source voltage, source-to-drain voltage, gate-to-source voltage, source-to-gate voltage, drain-to-source voltage, source-to-drain voltage, and any combination thereof.

40. The integrated circuit defined in claim 34, wherein the voltage being applied to said second portion and said inverse input circuitry is a voltage selected from the group consisting of drain-to-source voltage, source-to-drain voltage, gate-to-source voltage, source-to-gate voltage, drain-to-source voltage, source-to-drain voltage, and any combination thereof.

41. The integrated circuit defined in claim 34, wherein said predetermined LOW voltage level is a voltage lower in potential than said ground voltage level.

42. Voltage level translator circuitry, comprising:

a first output node;

a second output node;

a cross-coupled circuitry coupled to a predetermined voltage level and to said first and second output nodes;

first and second input circuitry that receive an input signal having a voltage potential ranging from a LOW voltage level to a HIGH voltage level, said first and second input circuitry operating in connection with said cross-coupled circuitry to selectively couple said first and second output nodes to said predetermined voltage level and said HIGH voltage level;

wherein said first input circuitry comprises;

a first transistor having its source coupled to a source voltage level, its gate coupled to receive said input signal, and its drain coupled to a first connection node;

a second transistor having its source connected to said first connection node, its gate coupled to ground, and its drain coupled to said second output node; and

a third transistor having its drain coupled to said first connection node, its gate coupled to receive said input signal, and its source coupled to ground, said third transistor operative to pull said first connection node to ground when said input signal is at said HIGH voltage level; and

wherein said second input circuitry comprises;

a fourth transistor having its source coupled to said source voltage level, its gate coupled to receive the inverse of said input signal level, and its drain coupled to a second connection node;

a fifth transistor having its source connected to said second connection node, its gate coupled to ground, and its drain coupled to said first output node; and

a sixth transistor having its drain coupled to said second connection node, its gate coupled to receive the inverse of said input signal, and its source coupled to ground, said third transistor operative to pull said second connection node to ground when said input signal is at said LOW voltage level.

43. The circuitry defined in claim 42, wherein said first, second, fourth, and fifth transistors comprise p-channel transistors, and wherein said third and sixth transistors comprise n-channel transistors.

44. The circuitry defined in claim 42, wherein said cross-coupled circuitry comprises:

a seventh transistor having its source coupled to said predetermined voltage level, its gate coupled to said first output node, and its drain coupled to said second output node; and

an eighth transistor having its source coupled to said predetermined voltage level, its gate coupled to said second output node, and its drain coupled to said first output node.

45. The circuitry defined in claim 42, wherein said first, second, third, fourth, fifth, and sixth transistors comprise thin gate oxide transistors.

46. The circuitry defined in claim 42, wherein said predetermined source voltage level is V_CC.

47. The circuitry defined in claim 42, wherein said predetermined voltage level is V_BB.

48. The circuitry defined in claim 42, wherein said predetermined source voltage level is substantially equal to said HIGH voltage level.