Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same
First Claim
1. A magnetic detecting element comprising:
- a multilayer film comprising a pair of first antiferromagnetic layers, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order on a substrate; and
a pair of magnetization control layers for controlling magnetization of the free magnetic layer, wherein the pair of magnetization control layers has a predetermined space in the track width direction which faces the free magnetic layer, wherein the pinned magnetic layer comprises a first magnetic layer extending in a track width direction in contact with the pair of first antiferromagnetic layers, a second magnetic layer facing the first magnetic layer in a thickness direction, and a nonmagnetic intermediate layer interposed between the first and second magnetic layers, magnetizations of the first and second magnetic layers being antiparallel to each other;
the pair of first antiferromagnetic layers has a predetermined space in the track width direction so that the pair of first antiferromagnetic layers is in contact with both side portions of the first magnetic layer in the thickness direction;
an electric resistance in the space changes in relation to a magnetization direction of the free magnetic layer and a magnetization direction of the second magnetic layer;
wherein a minimum dimension of the space between the pair of magnetization control layers is the same as or smaller than a minimum dimension of the predetermined space in the track width direction of the pair of first antiferrromagnetic layers.
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Accused Products
Abstract
The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized. Furthermore, a magnetic detecting element with high resistance to electrostatic damage (ESD) can be manufactured. Thus, a magnetic detecting element adaptable for a future higher recording density can be provided.
23 Citations
67 Claims
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1. A magnetic detecting element comprising:
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a multilayer film comprising a pair of first antiferromagnetic layers, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order on a substrate; and
a pair of magnetization control layers for controlling magnetization of the free magnetic layer, wherein the pair of magnetization control layers has a predetermined space in the track width direction which faces the free magnetic layer, wherein the pinned magnetic layer comprises a first magnetic layer extending in a track width direction in contact with the pair of first antiferromagnetic layers, a second magnetic layer facing the first magnetic layer in a thickness direction, and a nonmagnetic intermediate layer interposed between the first and second magnetic layers, magnetizations of the first and second magnetic layers being antiparallel to each other;
the pair of first antiferromagnetic layers has a predetermined space in the track width direction so that the pair of first antiferromagnetic layers is in contact with both side portions of the first magnetic layer in the thickness direction;
an electric resistance in the space changes in relation to a magnetization direction of the free magnetic layer and a magnetization direction of the second magnetic layer;
wherein a minimum dimension of the space between the pair of magnetization control layers is the same as or smaller than a minimum dimension of the predetermined space in the track width direction of the pair of first antiferrromagnetic layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 66, 67)
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33. A magnetic detecting element comprising:
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a multilayer film comprising a pair of first antiferromagnetic layers, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order on a substrate; and
a pair of magnetization control layers for controlling magnetization of the free magnetic layer, wherein the pinned magnetic layer comprises a first magnetic layer extending in a track width direction in contact with the pair of first antiferromagnetic layers, a second magnetic layer facing the first magnetic layer in a thickness direction, and a nonmagnetic intermediate layer interposed between the first and second magnetic layers, magnetizations of the first and second magnetic layers being antiparallel to each other;
the pair of first antiferromagnetic layers have a predetermined space in the track width direction so that the pair of first antiferromagnetic layers are in contact with both side portions of the first magnetic layer in the thickness direction;
an electric resistance in the space changes in relation to a magnetization direction of the free magnetic layer and a magnetization direction of the second magnetic layer;
wherein the magnetic detecting element further comprises a nonmagnetic metal layer having the same composition as that of the pair of first antiferromagnetic layers and provided in the space to make contact with the first magnetic layer, the nonmagnetic metal layer provided in the space being a disordered crystal structure layer thinner than the pair of first antiferromagnetic layers;
wherein a crystal of the first magnetic layer is epitaxial or heteroepitaxial with a crystal of the nonmagnetic metal layer, an end surface of the pinned magnetic layer is open near a surface facing a recording medium, and the nonmagnetic metal layer is made of X—
Mn alloy (wherein X is at least one element of Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe); and
further wherein in the vicinity of an interface with a central portion of the first magnetic layer or over the entire region of the nonmagnetic metal layer, the nonmagnetic metal layer assumes a face-centered cubic lattice (fcc) structure in which an equivalent crystal plane represented by a {111} plane is preferentially oriented in parallel with the interface. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A magnetic detecting element comprising:
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a multilayer film comprising a pair of first antiferromagnetic layers, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order on a substrate; and
a pair of magnetization control layers for controlling magnetization of the free magnetic layer, wherein the pinned magnetic layer comprises a first magnetic layer extending in a track width direction in contact with the pair of first antiferromagnetic layers, a second magnetic layer facing the first magnetic layer in a thickness direction, and a nonmagnetic intermediate layer interposed between the first and second magnetic layers, magnetizations of the first and second magnetic layers being antiparallel to each other;
the pair of first antiferromagnetic layers has a predetermined space in the track width direction so that the pair of first antiferromagnetic layers is in contact with both side portions of the first magnetic layer in the thickness direction;
an electric resistance in the space changes in relation to a magnetization direction of the free magnetic layer and a magnetization direction of the second magnetic layer;
wherein the magnetic detecting element further comprises a nonmagnetic metal layer having the same composition as that of the pair of first antiferromagnetic layers and provided in the space to make contact with the first magnetic layer, the nonmagnetic metal layer provided in the space being a disordered crystal structure layer thinner than the pair of first antiferromagnetic layers;
wherein a crystal of the first magnetic layer is epitaxial or heteroepitaxial with a crystal of the nonmagnetic metal layer, an end surface of the pinned magnetic layer is open near a surface facing a recording medium, and the nonmagnetic metal layer is made of X—
Mn alloy (wherein X is at least one element of Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe); and
wherein in the vicinity of an interface with the nonmagnetic metal layer, at least a central portion of the first magnetic layer of the pinned magnetic layer facing the nonmagnetic metal layer in the thickness direction assumes a face-centered cubic lattice (fcc) structure in which an equivalent crystal plane represented by a {111} plane is preferentially oriented in parallel with the interface, and in the vicinity of an interface with the nonmagnetic intermediate layer, the central portion assumes a body-centered cubic lattice (bcc) structure in which an equivalent crystal plane represented by a {110} plane is preferentially oriented in parallel with the interface. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54)
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55. A magnetic detecting element comprising:
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a multilayer film comprising a pair of first antiferromagnetic layers, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order on a substrate; and
a pair of magnetization control layers for controlling magnetization of the free magnetic layer, wherein the pinned magnetic layer comprises a first magnetic layer extending in a track width direction in contact with the pair of first antiferromagnetic layers, a second magnetic layer facing the first magnetic layer in a thickness direction, and a nonmagnetic intermediate layer interposed between the first and second magnetic layers, magnetizations of the first and second magnetic layers being antiparallel to each other;
the pair of first antiferromagnetic layers has a predetermined space in the track width direction so that the pair of first antiferromagnetic layers is in contact with both side portions of the first magnetic layer in the thickness direction;
an electric resistance in the space changes in relation to a magnetization direction of the free magnetic layer and a magnetization direction of the second magnetic layer;
wherein the magnetic detecting element further comprises a nonmagnetic metal layer having the same composition as that of the pair of first antiferromagnetic layers and provided in the space to make contact with the first magnetic layer, the nonmagnetic metal layer provided in the space being a disordered crystal structure layer thinner than the pair of first antiferromagnetic layers;
wherein a crystal of the first magnetic layer is epitaxial or heteroepitaxial with a crystal of the nonmagnetic metal layer, an end surface of the pinned magnetic layer is open near a surface facing a recording medium, and the nonmagnetic metal layer is made of X—
Mn alloy (wherein X is at least one element of Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe); and
wherein a value obtained by dividing a difference between a distance of nearest neighbor atoms of the nonmagnetic metal layer and that of a central portion of the first magnetic layer of the pinned magnetic layer in a planar direction parallel to the interface by a distance between nearest neighbor atoms of the first magnetic layer is 0.05 to 0.20. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63, 64, 65)
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Specification