Optical films and methods of making the same

• US 20050277063A1
• Filed: 05/27/2005
• Published: 12/15/2005
• Est. Priority Date: 04/15/2004
• Status: Active Grant

• Current Assignee: Ushio Denki Kabushiki Kaisha
• Original Assignee: Abraxis Biosensors, LLC
• Inventors: Wang, Jian Jim, Deng, Xuegong, Nikolov, Anguel N., Sciortino, Paul Jr.
• Granted Patent: US 7,670,758 B2
• Time in Patent Office: Days
• US Class Current: 430/311
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 5/1857 using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
• CPC Class Codes: G02B 5/3025 Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state G02B5/3008, G02B5/3016 take precedence
• CPC Class Codes: G02B 5/3083 Birefringent or phase retarding elements G02B5/3008, G02B5/3016 take precedence; systems for polarisation control G02B27/286; manufacturing phase modulating patterns by lithographic processes G03F7/001
• CPC Class Codes: G02F 1/13363 Birefringent elements, e.g. for optical compensation

Abstract

Films for optical use, articles containing such films, methods for making such films, and systems that utilize such films, are disclosed.

Claims

1. A method, comprising:

filling at least about 10% of a volume of a trench in a surface of a layer of a first material of an article by sequentially forming a plurality of monolayers of a second material different from the first material within the trench, wherein;

the layer transmits about 50% or more of light of wavelength λ

having a first polarization state incident on the layer along a path;

the layer blocks about 80% or more of light of wavelength λ

having a second polarization state incident on the layer along the path, the first and second polarization states being orthogonal; and

is between about 150 nm and about 5,000 nm.

2. The method of claim 1, wherein the trench is formed by etching a continuous layer of the first material.

4. The method of claim 1, wherein the trench is formed lithographically.

5. The method of claim 4, wherein the trench is formed using nano-imprint lithography.

8. The method of claim 4, wherein the trench is formed using holographic lithography.

11. The method of claim 1, wherein the trench has a width of about 1,000 nm or less.

14. The method of claim 1, wherein the trench has a depth of about 100 nm or more.

16. The method of claim 1, wherein the first material comprises a metal.

17. The method of claim 1, wherein the first material comprises at least one metal selected from the group consisting of Al, Au, Ag, and Cu.

22. The method of claim 1, wherein at least about 99% of the volume of the trench is filled by sequentially forming the plurality of monolayers within the trench.

23. The method of claim 1, wherein the layer of the first material and the second material form a continuous layer.

24. The method of claim 1, wherein forming the plurality of monolayers of the second material comprises depositing a monolayer of a precursor and exposing the monolayer of the precursor to a reagent to provide a monolayer of the second material.

35. The method of claim 1, wherein the second material comprises at least one material selected from a group consisting of SiO₂, SiN_x, Si, Al₂O₃, ZrO₂, Ta₂O₅, TiO₂, HfO₂, Nb₂O₅, and MgF₂.

36. The method of claim 1, wherein the layer of the first material comprises additional trenches formed in the surface of the layer.

41. The method of claim 36, wherein the trenches are separated by rows of the first material.

42. The method of claim 1, wherein the layer of the first material forms a surface relief grating.

45. The method of claim 1, wherein the layer transmits about 80% or more of light of wavelength λ

having the first polarization state incident on the layer along the path.

47. The method of claim 1, wherein the layer blocks about 90% or more of light of wavelength λ

having the second polarization state incident on the layer along the path.

50. The method of claim 1, wherein the first and second polarization states are linear polarization states.

56. The method of claim 1, the layer transmits about 50% or more of light of wavelength λ

′

having a first polarization state incident on the layer along a path and the layer blocks about 80% or more of light of wavelength λ

′

having a second polarization state incident on the layer along the path, wherein |λ

-λ

′

| is about 50 nm or more.

57. The method of claim 1, further comprising forming a layer of the second material over the filled trench by sequentially forming monolayers of the second material over the trench.

59. The method of claim 1, further comprising forming an anti-reflection film on a surface of the article.

3. (canceled)

6-7. -7. (canceled)

9-10. -10. (canceled)

12-13. -13. (canceled)

15. (canceled)

18-21. -21. (canceled)

25-34. -34. (canceled)

37-40. -40. (canceled)

43-44. -44. (canceled)

46. (canceled)

48-49. -49. (canceled)

51-55. -55. (canceled)

58. (canceled)

60-61. -61. (canceled)

62. A method, comprising:

forming a polarizing layer using atomic layer deposition.

63. The method of claim 62, wherein forming the polarizing layer comprises forming a grating layer comprising a first material.

64-67. -67. (canceled)

68. An article, comprising:

a continuous layer including rows of a first material alternating with rows of a nanolaminate material,

wherein the continuous layer transmits about 50% or more of light of wavelength λ

having a first polarization state incident on the layer along a path and the layer blocks about 80% or more of light of wavelength λ

having a second polarization state incident on the layer along the path, wherein the first and second polarization states are orthogonal and λ

is between about 150 nm and about 5,000 nm.

69. (canceled)