Dual damascene process
First Claim
1. A method of photoresist processing on a substrate over which is formed composite layers of insulation comprising a first layer of dielectric and a second layer of dielectric, the method comprising:
- forming a first photoresist layer over said composite layers of insulation;
patterning a via hole pattern in said first photoresist layer by exposing to radiation of a first sensitivity;
forming a second photoresist layer over via patterned and said first photoresist layer;
patterning a trench line pattern in second photoresist layer by exposing to radiation of a second sensitivity;
etching said second layer of dielectric underlying first layer of photoresist using the via hole pattern layer;
etching said composite layer of insulation, thereby transferring said trench line pattern into said second layer of dielectric and transferring said via hole pattern into said first layer of dielectric; and
filling the trench line and via hole openings with metal.
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Accused Products
Abstract
A method of photoresist processing includes forming a first photoresist layer over composite layers of dielectric insulation and a top insulating layer and patterning a via hole pattern in the first photoresist layer by exposing to radiation of a first sensitivity. A second photoresist layer is formed over via patterned and the first photoresist layer. A trench line pattern is formed in the second photoresist layer by exposing to radiation of a second sensitivity. The layers are then etched and the trench line and via hole openings are filled with metal.
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Citations
20 Claims
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1. A method of photoresist processing on a substrate over which is formed composite layers of insulation comprising a first layer of dielectric and a second layer of dielectric, the method comprising:
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forming a first photoresist layer over said composite layers of insulation;
patterning a via hole pattern in said first photoresist layer by exposing to radiation of a first sensitivity;
forming a second photoresist layer over via patterned and said first photoresist layer;
patterning a trench line pattern in second photoresist layer by exposing to radiation of a second sensitivity;
etching said second layer of dielectric underlying first layer of photoresist using the via hole pattern layer;
etching said composite layer of insulation, thereby transferring said trench line pattern into said second layer of dielectric and transferring said via hole pattern into said first layer of dielectric; and
filling the trench line and via hole openings with metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of dual damascene patterning by use of two-layered photoresist process, having different wavelength sensitivities for each layer, comprising:
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providing a substrate over which is formed composite layers of insulation wherein said composite layers comprise a first layer of dielectric separated from a second layer of dielectric by an intermediate etch stop layer of dielectric;
forming a first photoresist layer over said composite layers of insulation;
patterning a via hole pattern in said first photoresist layer composed by exposing to radiation of a first sensitivity and developing said first photoresist layer by using a via hole mask;
forming a second photoresist layer over said first photoresist layer;
patterning a trench line pattern in said second photoresist layer by exposing to radiation of a second sensitivity and developing said second photoresist layer by using a trench line mask;
etching, in two-step process, said second layer of dielectric underlying said first layer of photoresist and transferring said via hole pattern into said second layer of dielectric;
etching said intermediate etch stop layer of dielectric under said second layer of dielectric and transferring said via hole pattern in said layer of photoresist into said intermediate etch stop layer of dielectric;
etching said composite layer of insulation transferring said trench line pattern into said first layer of photoresist and into said second layer of dielectric to form a trench line opening, and at the same time transferring said via hole pattern- into said intermediate etch stop layer of dielectric and into said first layer of dielectric to form a via hole opening;
removing said layers of photoresist and any exposed insulating material in the trench line opening and via hole opening;
depositing metal into the trench line and via hole opening with subsequent removal of excess metal by chemical mechanical polishing back, to form inlaid conducting interconnects lines and contact vias, in a dual damascene process. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for patterning in a semiconductor wafer having a dielectric layer with a lower portion and an upper portion over the lower portion, the method comprising:
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providing a first photoresist layer over the upper dielectric layer portion, the first photoresist layer sensitive to first radiation;
patterning and developing a via hole in the first photoresist layer using the first radiation;
providing a second photoresist layer over the patterned and developed first photoresist layer, the second photoresist layer filling the via hole and being sensitive to a second radiation;
patterning and developing the second photoresist layer to form a trench over the filled via hole, using the second radiation;
etching the upper and lower dielectric layer portions to form a trench pattern in the upper dielectric layer portion that corresponds to the trench pattern formed in the second photoresist layer and a via hole pattern in the lower dielectric layer portion that corresponds to the via hole in the first photoresist layer.
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Specification