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Semiconductor device with a high thermal dissipation efficiency

  • US 20050277280A1
  • Filed: 06/09/2005
  • Published: 12/15/2005
  • Est. Priority Date: 06/15/2004
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising the steps of:

  • providing a carrier having a seed layer;

    providing a patterned mask layer on the seed layer of the carrier, said patterned mask layer having a recess structure;

    depositing a thermally conducting material on the patterned mask layer in the recess structure, thus forming structure elements of a thermally conducting structure;

    depositing a solder on the thermally conducting structure;

    removing the patterned mask layer and the seed layer between the structure elements of the thermally conducting structure;

    attaching the thermally conducting structure to a surface of a semiconductor device via soldering.

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