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Method for stabilizing high pressure oxidation of a semiconductor device

  • US 20050279283A1
  • Filed: 08/23/2005
  • Published: 12/22/2005
  • Est. Priority Date: 08/31/1999
  • Status: Abandoned Application
First Claim
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1. A furnace comprising:

  • a furnace tube having a length and an interior surface for processing semiconductor material therein when operating in a predetermined range of temperature and a range of pressure;

    a gas feed coupled to the furnace tube for introducing a gas into the furnace tube; and

    a catalyst located within said furnace tube for contacting the gas introduced into the furnace tube.

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