Method for stabilizing high pressure oxidation of a semiconductor device

• US 20050279283A1
• Filed: 08/23/2005
• Published: 12/22/2005
• Est. Priority Date: 08/31/1999
• Status: Abandoned Application

• Current Assignee: Dave Chapek, Gealy, F. Daniel, Husam N. Al-Shareef, Randhir Thakur, Scott Deboer
• Original Assignee: Dave Chapek, Gealy, F. Daniel, Husam N. Al-Shareef, Randhir Thakur, Scott Deboer
• Inventors: Gealy, F. Daniel, Thakur, Randhir, Chapek, Dave, DeBoer, Scott, Al-Shareef, Husam N.
• Application Number:
  US11/210,607
• Publication Number:
  US 20050279283A1
• Time in Patent Office: Days
• US Class Current: 118/724
• CPC Class Codes: C30B 33/005 Oxydation
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: Y10S 438/903 Catalyst aided deposition

Abstract

A method and apparatus for preventing N₂O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N₂O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N₂O and a temperature range of 600° to 750° C., which are the conditions that lead to the N₂O going super critical. By preventing the N₂O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

Claims

1. A furnace comprising:

a furnace tube having a length and an interior surface for processing semiconductor material therein when operating in a predetermined range of temperature and a range of pressure;

a gas feed coupled to the furnace tube for introducing a gas into the furnace tube; and

a catalyst located within said furnace tube for contacting the gas introduced into the furnace tube.

2. The furnace according to claim 1, wherein the predetermined range of temperature includes 600°

C. to 750°

C.

3. The furnace according to claim 1, wherein the catalyst matrix comprises:

a tube liner placed along a portion of a length of the interior surface of the furnace tube, the tube liner including a plurality of openings therein.

4. The furnace according to claim 3, wherein the tube liner comprises:

a base material having a plurality of openings formed therein; and

a catalyst material covering a portion of the base material.

5. The furnace according to claim 4, wherein the base material comprises stainless steel.

6. The furnace according to claim 5, wherein the catalyst material is selected from a group consisting of lead, platinum, iridium or palladium.

7. The furnace according to claim 5, wherein the catalyst material is selected from a group consisting of rhodium, nickel, or silver.

8. The furnace according to claim 1, wherein the predetermined range of pressure includes a range of five atmospheres to twenty-five atmospheres.

9. The furnace according to claim 1, wherein the predetermined range of pressure is at least five atmospheres.

10. The furnace according to claim 1, further comprising a gas outlet connected to the furnace tube.

11. A furnace comprising:

a furnace tube having a length and an interior surface for processing semiconductor material therein in a predetermined range of temperature and a predetermined range of pressure;

a gas feed coupled to the furnace tube for introducing a gas into the furnace tube;

a catalyst matrix located within the furnace tube for contacting the gas introduced into the furnace tube; and

a gas outlet coupled to the furnace tube for removing gas therefrom.

12. The furnace according to claim 11, wherein the predetermined range of temperature includes 600°

C. to 750°

C.

13. The furnace according to claim 11, wherein the catalyst matrix comprises:

a tube liner placed along a portion of a length of the interior surface of the furnace tube, the tube liner including a plurality of openings therein.

14. The furnace according to claim 13, wherein the tube liner comprises:

a base material having a plurality of openings formed therein; and

a catalyst material covering a portion of the base material.

15. The furnace according to claim 14, wherein the base material is formed in a honeycomb configuration.

16. The furnace according to claim 14, wherein the base material is formed in a hexagonal configuration.

17. The furnace according to claim 14, wherein the base material comprises stainless steel.

18. The furnace according to claim 14, wherein the base material comprises a structural ceramic.

19. The furnace according to claim 14, wherein the catalyst material is selected from a group consisting of lead, platinum, iridium or palladium.

20. The furnace according to claim 14, wherein the catalyst material is selected from a group consisting of rhodium, nickel, or silver.

21. The furnace according to claim 11, wherein the predetermined range of pressure includes a range of five atmospheres to twenty-five atmospheres.

22. The furnace according to claim 11, wherein the predetermined range of pressure is at least five atmospheres.

23. A furnace comprising:

a furnace tube having a length and an interior surface for processing semiconductor material therein in a predetermined range of temperature and a predetermined range of pressure;

a gas feed coupled to the furnace tube for introducing N₂O gas into the furnace tube;

a catalyst matrix located within the furnace tube for contacting the N₂O gas introduced into the furnace tube; and

a gas outlet coupled to the furnace tube for removing the N₂O gas therefrom.

24. The furnace according to claim 23, wherein the predetermined range of temperature includes 600°

C. to 750°

C.

25. The furnace according to claim 23, wherein the catalyst matrix comprises:

a tube liner placed along a portion of a length of the interior surface of the furnace tube, the tube liner including a plurality of openings therein.

26. The furnace according to claim 25, wherein the tube liner comprises:

a base material having a plurality of openings formed therein; and

a catalyst material covering a portion of the base material.

27. The furnace according to claim 26, wherein the base material is formed in a honeycomb configuration.

28. The furnace according to claim 26, wherein the base material is formed in a hexagonal configuration.

29. The furnace according to claim 26, wherein the base material comprises at least one of stainless steel and a structural ceramic.

30. The furnace according to claim 26, wherein the catalyst material is selected from a group consisting of lead, platinum, iridium or palladium.

31. The furnace according to claim 26, wherein the catalyst material is selected from a group consisting of rhodium, nickel, or silver.

32. The furnace according to claim 23, wherein the predetermined range of pressure includes a range of five atmospheres to twenty-five atmospheres.

33. The furnace according to claim 23, wherein the predetermined range of pressure is at least five atmospheres.