Method for stabilizing high pressure oxidation of a semiconductor device
First Claim
1. A furnace comprising:
- a furnace tube having a length and an interior surface for processing semiconductor material therein when operating in a predetermined range of temperature and a range of pressure;
a gas feed coupled to the furnace tube for introducing a gas into the furnace tube; and
a catalyst located within said furnace tube for contacting the gas introduced into the furnace tube.
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Abstract
A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
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Citations
33 Claims
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1. A furnace comprising:
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a furnace tube having a length and an interior surface for processing semiconductor material therein when operating in a predetermined range of temperature and a range of pressure;
a gas feed coupled to the furnace tube for introducing a gas into the furnace tube; and
a catalyst located within said furnace tube for contacting the gas introduced into the furnace tube. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A furnace comprising:
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a furnace tube having a length and an interior surface for processing semiconductor material therein in a predetermined range of temperature and a predetermined range of pressure;
a gas feed coupled to the furnace tube for introducing a gas into the furnace tube;
a catalyst matrix located within the furnace tube for contacting the gas introduced into the furnace tube; and
a gas outlet coupled to the furnace tube for removing gas therefrom. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A furnace comprising:
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a furnace tube having a length and an interior surface for processing semiconductor material therein in a predetermined range of temperature and a predetermined range of pressure;
a gas feed coupled to the furnace tube for introducing N2O gas into the furnace tube;
a catalyst matrix located within the furnace tube for contacting the N2O gas introduced into the furnace tube; and
a gas outlet coupled to the furnace tube for removing the N2O gas therefrom. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification