Semiconductor light emitting device and semiconductor light emitting unit

• US 20050280017A1
• Filed: 06/10/2005
• Published: 12/22/2005
• Est. Priority Date: 06/11/2004
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Oshio, Hiroaki, Takezawa, Hatsuo, Miyakawa, Takeshi, Matsumoto, Iwao
• Granted Patent: US 7,291,866 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

A semiconductor light emitting device comprises: embedding resin; a first lead having a first inner lead section embedded in the embedding resin and a first outer lead section protruding from one side face of the embedding resin; a second lead having a second inner lead section embedded in the embedding resin and a second outer lead section protruding from a side face opposed to the one side face of the embedding resin; a semiconductor light emitting chip mounted on a portion of the first inner lead section exposed in a recess provided on an upper face of the embedding resin; and a wire connecting the semiconductor light emitting chip with the second lead. The first and second inner lead sections and the first and second outer lead sections each have a substantially coplanar rear face. At least a part of the rear face of the first inner lead section and at least a part of the rear face of the second inner lead section are not covered with the embedding resin but are exposed.

Claims

1. A semiconductor light emitting device comprising:

embedding resin;

a first lead having a first inner lead section embedded in the embedding resin and a first outer lead section protruding from one side face of the embedding resin;

a second lead having a second inner lead section embedded in the embedding resin and a second outer lead section protruding from a side face opposed to the one side face of the embedding resin;

a semiconductor light emitting chip mounted on a portion of the first inner lead section exposed in a recess provided on an upper face of the embedding resin; and

a wire connecting the semiconductor light emitting chip with the second lead,

the first and second inner lead sections and the first and second outer lead sections each having a substantially coplanar rear face, and

at least a part of the rear face of the first inner lead section and at least a part of the rear face of the second inner lead section being not covered with the embedding resin but being exposed.

2. A semiconductor light emitting device according to claim 1, wherein the embedding resin has a rear face substantially coplanar with the rear faces of the first and second inner lead sections and the first and second outer lead sections.

3. A semiconductor light emitting device according to claim 1, wherein the portion of the first inner lead section on which the semiconductor light emitting chip is mounted has a thickness greater than that of a tip of the first outer lead section.

4. A semiconductor light emitting device according to claim 1, wherein

the first inner lead section has a first thickened portion having a thickness greater than that of a tip of the first outer lead section,

the first outer lead section has a second thickened portion having a thickness greater than that of a tip thereof, and

the first and second thickened portions are continuously provided.

5. A semiconductor light emitting device according to claim 1, wherein at least a portion of the second inner lead section has a thickness greater than that of a tip of the second outer lead section.

6. A semiconductor light emitting device according to claim 1, wherein the embedding resin is thermoplastic resin.

7. A semiconductor light emitting device according to claim 6, wherein the thermoplastic resin contains titanium oxide.

8. A semiconductor light emitting device according to claim 1, further comprising sealing resin for sealing the semiconductor light emitting chip provided in the recess and the wire.

9. A semiconductor light emitting device according to claim 1, wherein

the first inner lead section has a recess, and

the semiconductor light emitting chip is mounted on a bottom face of the recess.

10. A semiconductor light emitting device according to claim 9, wherein a salient portion is provided around the semiconductor light emitting chip, and the outside of the salient portion as viewed from the semiconductor light emitting chip is filled with resin containing light reflective material.

11. A semiconductor light emitting device according to claim 9, wherein the recess of the first inner lead section has a depth greater than the thickness of the semiconductor light emitting chip.

12. A semiconductor light emitting device according to claim 1, wherein a side face of the recess has a tapered portion having a width decreasing toward a bottom face thereof.

13. A semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting chip is mounted on the first inner lead section with eutectic solder or gold bump.

14. A semiconductor light emitting unit comprising:

a mounting substrate having a first electrode pad and a second electrode pad; and

a semiconductor light emitting device including;

embedding resin;

a first lead having a first inner lead section embedded in the embedding resin and a first outer lead section protruding from one side face of the embedding resin;

a second lead having a second inner lead section embedded in the embedding resin and a second outer lead section protruding from a side face opposed to the one side face of the embedding resin;

a semiconductor light emitting chip mounted on a portion of the first inner lead section exposed in a recess provided on an upper face of the embedding resin; and

a wire connecting the semiconductor light emitting chip with the second lead,

the first and second inner lead sections and the first and second outer lead sections;

each having a substantially coplanar rear face, and

at least a part of the rear face of the first inner lead section and at least a part of the rear face of the second inner lead section being not covered with the embedding resin but being exposed,

one of the first and second outer lead sections being connected with one of the first and second electrode pads, and

other of the first and second outer lead sections being connected with other of the first and second electrode pads.

15. A semiconductor light emitting unit according to claim 14, wherein the mounting substrate further having a contact pad provided between the first and second electrode pads, and at least a rear face of a part where the semiconductor light emitting device is mounted is connected with the contact pad.

16. A semiconductor light emitting unit according to claim 15, wherein the rear face of a part where the semiconductor light emitting device is mounted is connected with the contact pad by a solder.

17. A semiconductor light emitting unit according to claim 14, wherein the embedding resin has a rear face substantially coplanar with the rear faces of the first and second inner lead sections and the first and second outer lead sections.

18. A semiconductor light emitting unit according to claim 14, wherein the portion of the first inner lead section on which the semiconductor light emitting chip is mounted has a thickness greater than that of a tip of the first outer lead section.

19. A semiconductor light emitting unit according to claim 14, wherein

the first inner lead section has a first thickened portion having a thickness greater than that of a tip of the first outer lead section,

the first outer lead section has a second thickened portion having a thickness greater than that of a tip thereof, and

the first and second thickened portions are continuously provided.

20. A semiconductor light emitting unit according to claim 14, wherein at least a portion of the second inner lead section has a thickness greater than that of a tip of the second outer lead section.