Co-packaged control circuit, transistor and inverted diode

• US 20050280125A1
• Filed: 08/24/2005
• Published: 12/22/2005
• Est. Priority Date: 09/04/2002
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Oliver, Stephen, Richard, Hugh D.
• Granted Patent: US 7,202,557 B2
• Time in Patent Office: Days
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/26145 Flow barriers
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/8319 Arrangement of the layer connectors prior to mounting
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A copackaged electronic device comprises a diode device having an anode coupled to a drain electrode of a switching device and a cathode capable of being coupled to an external circuit. The switching device may be controlled by an integrated circuit mounted on a source electrode of the switching device and electrically connected such that the integrated circuit is capable of controlling switching of the switching device. For example, the device is used in a power factor correction circuit. The diode device comprises at least one inverted diode having a solderable anode and a wire-bondable cathode.

Claims

1. A semiconductor package, comprising:

an electrically conductive pad having a top surface and a bottom surface;

a first diode having a first anode and a first cathode opposite of the first anode, the first cathode being mounted and electrically connected to the top surface of the conductive pad;

a second diode having a second cathode and a second anode opposite of the second cathode, the second anode being mounted and electrically connected to the top surface of the conductive pad, whereby said first diode and said second diode are electrically connected in series through said conductive pad;

a first lead electrically connected to said first anode; and

a second lead electrically connected to said second cathode.

2. The semiconductor package of claim 1, further comprising:

another conductive pad, and an insulating body sandwiched between the conductive body and the another conductive body.

3. The semiconductor package of claim 2, wherein the insulating body includes a phase change sheet, or a tape, or an epoxy, or a dielectric coating, or boron nitride layer, or a silicone grease, a silicone/boron nitride composite.

4. The semiconductor package of claim 2, further comprising another semiconductor device disposed on said another conductive pad.

5. The semiconductor package of claim 4, wherein the another semiconductor device is a power MOSFET.

6. The semiconductor package of claim 4, wherein the another semiconductor device is electrically connected to at least one of the diodes.

7. The semiconductor package of claim 4, wherein the another semiconductor device is electrically connected to a corresponding lead.

8. The semiconductor package of claim 1, wherein the bottom surface of the conductive pad is exposed.

9. The semiconductor package of claim 1, wherein said package conforms to the TO-220 standard.

10. The semiconductor package of claim 1, wherein said package conforms to the D2-pak standard.

11. The semiconductor package of claim 1, wherein said package conforms to the TO220FP standard.

12. The semiconductor package of claim 1, wherein said package conforms to the TO247 standard.

13. The semiconductor package of claim 1, wherein said leads extend in the same direction.

14. The semiconductor package of claim 13, wherein said leads are parallel one another.