Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement
First Claim
1. A method of programming a phase-change memory device, comprising controlling an amount of current supplied to a phase-change material of the phase-change memory device based on a measure of resistance of the phase-change material during programming of the phase-change memory device.
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Accused Products
Abstract
Programming phase-change memory devices and driver circuits for programming phase-change memory devices are provided that control an amount of current supplied to a phase-change material of the phase-change memory device based on a measure of resistance of the phase-change material during programming of the phase-change memory device. Such control may be based on detected voltage or current. The amount of current supplied to the phase-change material may be increased until the measured voltage level changes with respect to a reference voltage value and the current maintained constant if the measured voltage level has changed with respect to the reference voltage value. The change of the measured voltage level with respect to the reference voltage may be the measured voltage level falling below the reference voltage value.
37 Citations
32 Claims
- 1. A method of programming a phase-change memory device, comprising controlling an amount of current supplied to a phase-change material of the phase-change memory device based on a measure of resistance of the phase-change material during programming of the phase-change memory device.
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14. A phase-change memory device, comprising:
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a phase-change memory cell comprising a phase-change material;
a detection circuit configured to measure a voltage and/or current of a data line coupled to the phase-change memory cell; and
a controller circuit coupled to the phase-change memory cell and configured to control an amount of current supplied to the phase-change material of the phase-change memory cell based on an output of the detection circuit. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A phase-change memory device, comprising:
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a phase-change memory cell comprising a phase-change material; and
means for controlling an amount of current supplied to the phase-change material of the phase-change memory cell based on a measure of resistance of the phase-change material during programming of the phase-change memory cell. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. A phase-change memory write drive circuit, comprising:
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a current detection circuit coupled to a data line of a phase-change memory;
a current generation circuit responsive to a control signal and coupled to the data ine of the phase-change memory and configured to supply current to the data line of the phase-change memory responsive to the control signal and to increase an amount of current supplied to the data line of the phase-change memory until the current detection circuit indicates that a current measured by the current detection circuit is greater than a reference current and maintain the amount of current supplied to the phase-change memory when the current measured by the current detection circuit indicates that the measured current is greater than the reference current.
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32. A phase-change memory write drive circuit, comprising:
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a voltage detection circuit coupled to a data line of a phase-change memory;
a current generation circuit responsive to a control signal and coupled to the data line of the phase-change memory and configured to supply current to the data line of the phase-change memory responsive to the control signal and to increase an amount of current supplied to the data line of the phase-change memory until the voltage detection circuit indicates that a voltage measured by the voltage detection circuit is less than a reference voltage and maintain the amount of current supplied to the phase-change memory when the voltage measured by the voltage detection circuit indicates that the measured voltage is less than the reference voltage.
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Specification