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Method for manufacturing semiconductor substrate and semiconductor substrate

  • US 20050282019A1
  • Filed: 06/08/2005
  • Published: 12/22/2005
  • Est. Priority Date: 06/18/2004
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor substrate comprising:

  • forming an anti-diffusion layer and a peel layer in a substrate; and

    performing heat treatment to peel part of the substrate off along the peel layer, wherein the anti-diffusion layer is formed to inhibit the diffusion of a peeling substance in the peel layer beyond the anti-diffusion layer.

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