Heat treatment jig for silicon semiconductor substrate
First Claim
1. A heat treatment jig which comes into contact with silicon semiconductor substrates to be supported, wherein said jig is loaded onto a heat treatment boat in a vertical heat treatment furnace, comprising;
- a configuration of a ring structure or a solid disc structure both with the wall thickness of not less than 1.5 mm but not greater than 6.0 mm;
a minimum deflection displacement of 100 μ
m or less at the contact region with said silicon semiconductor substrate when loaded in said heat treatment boat;
an outer diameter which is not less than 65% of the diameter of relevant silicon semiconductor substrate to be supported; and
a surface roughness (Ra) of not less than 1.0 μ
m but not greater than 100 μ
m at the region to contact with said silicon semiconductor substrates.
1 Assignment
0 Petitions
Accused Products
Abstract
A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.
-
Citations
17 Claims
-
1. A heat treatment jig which comes into contact with silicon semiconductor substrates to be supported, wherein said jig is loaded onto a heat treatment boat in a vertical heat treatment furnace, comprising;
-
a configuration of a ring structure or a solid disc structure both with the wall thickness of not less than 1.5 mm but not greater than 6.0 mm;
a minimum deflection displacement of 100 μ
m or less at the contact region with said silicon semiconductor substrate when loaded in said heat treatment boat;
an outer diameter which is not less than 65% of the diameter of relevant silicon semiconductor substrate to be supported; and
a surface roughness (Ra) of not less than 1.0 μ
m but not greater than 100 μ
m at the region to contact with said silicon semiconductor substrates. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
Specification