Method of peeling off and method of manufacturing semiconductor device

• US 20050282357A1
• Filed: 08/09/2005
• Published: 12/22/2005
• Est. Priority Date: 08/10/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei
• Granted Patent: US 7,361,573 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.

Claims

1. A semiconductor device manufacturing method comprising:

forming a first material layer having tensile stress over a substrate;

forming a second material layer having a compressive stress over said first material layer;

forming an insulating layer over said second material layer;

forming an element over said insulating layer;

sticking a supporting body to said element;

subsequently peeling said supporting body from said substrate by physical means within said second material layer or in the interface of said second material layer; and

sticking a transfer body to said insulating layer or said second material layer to sandwich said element between said supporting body and said transfer body.

2. A method according to claim 1, wherein said supporting body is a film substrate or a substrate.

3. A method according to claim 1, wherein said transfer body is a film substrate or a substrate.

4. A method according to claim 1, wherein heating treatment or laser beam radiating treatment is carried out before sticking said supporting body to said element.

5. A method according to claim 1, wherein heating treatment or laser beam radiating treatment is carried out before the peeling-off by said physical means.

6. A method according to claim 1, wherein said element is a thin film transistor having a semiconductor layer as an active layer and a step of forming said semiconductor layer is carried out by crystallizing a semiconductor layer having an amorphous structure by heating treatment or laser beam radiating treatment to crystallize and form a semiconductor layer having a crystalline structure.

7. A method according to claim 1, wherein said supporting body is a counter substrate and said element has a pixel electrode and a liquid crystal is packed between said pixel electrode and said counter substrate.

8. A method according to claim 1, wherein said supporting body is a sealing material and said element is a light emitting element.

18. A method according to claim 1 wherein said semiconductor device is incorporated in one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a cellular phone, an electronic book, and a display.

9. A semiconductor device manufacturing method comprising:

forming a first material layer over a substrate;

forming a second material layer having a compressive stress over said first material layer;

forming an insulating layer over said second material layer;

forming an element over said insulating layer;

sticking a supporting body to said element;

subsequently peeling said supporting body off said substrate by physical means within said second material layer or in the interface of said second material layer; and

sticking a transfer body to said insulating layer or said second material layer to sandwich said element between said supporting body and said transfer body.

10. A method according to claim 9, wherein said first material layer has a compressive stress immediately after the formation and has a tensile stress immediately before the peeling-off.

11. A method according to claim 9, wherein said supporting body is a film substrate or a substrate.

12. A method according to claim 9, wherein said transfer body is a film substrate or a substrate.

13. A method according to claim 9, wherein heating treatment or laser beam radiating treatment is carried out before sticking said supporting body to said element.

14. A method according to claim 9, wherein heating treatment or laser beam radiating treatment is carried out before the peeling-off by said physical means.

15. A method according to claim 9, wherein said element is a thin film transistor having a semiconductor layer as an active layer and a step of forming said semiconductor layer is carried out by crystallizing a semiconductor layer having an amorphous structure by heating treatment or laser beam radiating treatment to crystallize and form a semiconductor layer having a crystalline structure.

16. A method according to claim 9, wherein said supporting body is a counter substrate and said element has a pixel electrode and a liquid crystal is packed between said pixel electrode and said counter substrate.

17. A method according to claim 9, wherein said supporting body is a sealing material and said element is a light emitting element.

19. A method according to claim 9 wherein said semiconductor device is incorporated in one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, digital camera, a cellular phone, an electronic book, and a display.