Novel conductive elements for thin film transistors used in a flat panel display
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Abstract
Provided is a structure for conductive members in a TFT display. The structure is aluminum based and is heat treated. When heat treated, no hillocks are formed because of the presence of a titanium layer. Furthermore, TiAl3 is not formed because of the presence of a TiN diffusion layer between the aluminum and the Ti layers. This novel structure has a low resistivity and is therefore suited for large displays that use thin film transistors to drive the pixels.
63 Citations
28 Claims
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1. (canceled)
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2. A thin film transistor, comprising a source electrode, a drain electrode, a gate electrode, and a semiconductor layer:
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wherein one of the source electrode, the drain electrode, and the gate electrode includes an orderly stacked structure of a titanium layer, an aluminum-based metal layer, and a titanium layer; and
wherein a diffusion prevention layer is interposed between at least one of the titanium layers and the aluminum-based layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10)
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11. (canceled)
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12. A flat panel display, comprising a plurality of sub-pixels driven by thin film transistors, each of the thin film transistors including a source electrode, a drain electrode, a gate electrode, and a semiconductor layer;
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wherein at least one of the source electrode, the drain electrode, and the gate electrode including an orderly stacked structure of a titanium layer, an aluminum-based metal layer, and a titanium layer; and
wherein a diffusion prevention layer is interposed between at least one of the titanium layers and the aluminum-based layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. (canceled)
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22. A flat panel display, comprising:
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driving circuits disposed along edges of said display;
a plurality of sub-pixels driven by thin film transistors; and
conductive lines connecting the driving circuits disposed along edges of said display to each of said plurality of sub-pixels;
wherein said conductive lines includes an orderly stacked structure of a titanium layer, an aluminum-based metal layer, and a titanium layer; and
wherein a diffusion prevention layer is interposed between at least one of the titanium layers and the aluminum-based layer. - View Dependent Claims (23, 25)
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24. (canceled)
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26. A method of manufacturing a thin film transistor, the method comprising;
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forming a source electrode;
forming a drain electrode;
forming a gate electrode; and
forming a semiconductor layer;
wherein at least one of the source electrode, the drain electrode, and the gate electrode is formed as an orderly stacked structure of a titanium layer, an aluminum-based metal layer, and a titanium layer; and
wherein a diffusion prevention layer is interposed between at least one of the titanium layers and the aluminum-based layer.
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27. A method of manufacturing a flat panel display, the method comprising:
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forming a plurality of sub-pixels driven by thin film transistors, each of the thin film transistors formed to include;
a source electrode;
a drain electrode;
a gate electrode; and
a semiconductor layer;
wherein at least one of the source electrode, the drain electrode, and the gate electrode is formed as an orderly stacked structure of a titanium layer, an aluminum-based metal layer, and a titanium layer; and
wherein a diffusion prevention layer is interposed between at least one of the titanium layers and the aluminum-based layer.
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28. A method of manufacturing a flat panel display, the method comprising:
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forming driving circuits disposed along edges of said display;
forming a plurality of sub-pixels driven by thin film transistors; and
forming conductive lines connecting the driving circuits disposed along edges of said display to each of said plurality of sub-pixels;
wherein said conductive lines are formed as an orderly stacked structure of a titanium layer, an aluminum-based metal layer, and a titanium layer; and
wherein a diffusion prevention layer is interposed between at least one of the titanium layers and the aluminum-based layer.
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Specification