Surface plasmon light emitter structure and method of manufacture
First Claim
1. A light emitting semiconductor device comprising:
- a substrate, the substrate comprising a surface region;
a first type semiconductor material overlying the surface region of the substrate;
an active layer overlying the semiconductor material;
a second type semiconductor material overlying the active layer;
a metal layer overlying the second type semiconductor material;
a surface region on the metal layer;
a spatial spacing between the metal layer and the active layer sufficient to cause an energy coupling between a surface plasmon mode at the surface region of the metal layer and the active layer;
a textured interface region between the metal layer and the second type of semiconductor material to enhance formation of electromagetic radiation from the surface plasmon mode;
whereupon the coupling causes an increase of a level of the electromagnetic radiation to be derived from the active layer.
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Accused Products
Abstract
A method (and resulting structures) for manufacturing light emitting semiconductor devices. The method includes providing a substrate comprising a surface region and forming a metal layer overlying the surface region of the substrate. In a specific embodiment, the metal layer and the surface region are characterized by a spatial spacing between the metal layer and the substrate to cause a coupling between electron-hole pairs generated in the substrate and a surface plasmon mode at an interface region between the metal layer and the surface region. Additionally, the interface region has a textured characteristic between the surface region and the metal layer. The textured characteristics causes emission of electromagnetic radiation through the surface plasmon mode or like mechanism according to a specific embodiment.
255 Citations
54 Claims
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1. A light emitting semiconductor device comprising:
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a substrate, the substrate comprising a surface region;
a first type semiconductor material overlying the surface region of the substrate;
an active layer overlying the semiconductor material;
a second type semiconductor material overlying the active layer;
a metal layer overlying the second type semiconductor material;
a surface region on the metal layer;
a spatial spacing between the metal layer and the active layer sufficient to cause an energy coupling between a surface plasmon mode at the surface region of the metal layer and the active layer;
a textured interface region between the metal layer and the second type of semiconductor material to enhance formation of electromagetic radiation from the surface plasmon mode;
whereupon the coupling causes an increase of a level of the electromagnetic radiation to be derived from the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 20)
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19. The device 1 further comprising an electromagnetic radiation source coupled to the surface region.
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21. A method for fabricating light emitting devices comprising:
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providing a substrate, the substrate comprising a surface region;
forming a first type semiconductor material overlying the surface region of the substrate;
forming am active layer overlying the semiconductor material;
forming a second type semiconductor material overlying the active layer;
forming a textured interface region between the second type semiconductor material and a metal layer to be formed overlying the second type semiconductor material; and
forming a metal layer including a surface region overlying the second type semiconductor material at a spatial spacing between the surface region and the second type semiconductor material to cause a coupling between a surface plasmon mode at the surface region of the metal layer and the active layer;
whereupon the textured interface region enhances formation of a first electromagnetic radiation to be derived from the surface plasmon mode; and
whereupon the coupling associated with the spatial spacing between the surface region of the metal layer and the second type semiconductor material causes an increase of a level of second electromagnetic radiation to be derived from the active layer.
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22. A light emitting semiconductor device comprising:
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a substrate comprising a surface region and a semiconductor region;
a metal layer overlying the surface region of the substrate;
an interface region between the surface region and the metal layer;
a textured characteristic at the interface region;
a spatial spacing between the metal layer and the semiconductor region of the substrate to cause a coupling between electron-hole pairs generated in the semiconductor region of the substrate and a surface plasmon mode at the interface region. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A light emitting semiconductor device comprising:
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a first substrate comprising a first surface region;
a first metal layer overlying the first surface region of the first substrate;
a first interface region between the first surface region and the first metal layer;
a first textured characteristic at the first interface region;
a first spatial spacing between the first metal layer and the first substrate to cause a coupling between electron-hole pairs generated in the first substrate and a surface plasmon mode at the first interface region; and
a second substrate comprising a second surface region;
a second metal layer overlying the second surface region of the second substrate;
a second interface region between the second surface region and the second metal layer;
a second textured characteristic at the second interface region;
a second spatial spacing between the second metal layer and the second substrate to cause a coupling between electron-hole pairs generated in the second substrate and a surface plasmon mode at the second interface region. - View Dependent Claims (37, 38, 39)
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40. A method for manufacturing light emitting semiconductor devices, the method comprising:
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providing a substrate comprising a surface region;
forming a metal layer overlying the surface region of the substrate, the metal layer and the surface region being characterized by a spatial spacing between the metal layer and the substrate to cause a coupling between electron-hole pairs generated in the substrate and a surface plasmon mode at an interface region between the metal layer and the surface region;
whereupon the interface region having a textured characteristic between the surface region and the metal layer. - View Dependent Claims (41, 42, 43, 44, 45, 46)
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47. A light emitting semiconductor device comprising:
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a substrate comprising a surface region, the substrate comprising an active region;
a metal layer overlying the surface region of the substrate;
an interface region between the surface region and the metal layer;
a textured characteristic at the interface region;
a spatial spacing between the metal layer and the active region of the substrate to cause a coupling between electron-hole pairs generated in the substrate and a surface plasmon mode at the interface region;
a first electrode coupled to the substrate;
a second electrode coupled to the metal layer; and
a voltage source coupled between the first electrode and the second electrode to generate electromagnetic radiation in the active region of the substrate, the electromagnetic radiation being enhanced by the coupling between the electron-hole pairs generated by the active region of the substrate and the surface plasmon mode at the interface region. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54)
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Specification