LIGHT-EMITTING DEVICE
First Claim
1. A light-emitting device comprising:
- a substrate;
a first nitride semiconductor stack formed on the substrate;
a nitride light-emitting layer formed on the first nitride semiconductor stack;
a second nitride semiconductor stack formed on the nitride light-emitting layer comprising a plurality of hexagonal-pyramid cavities extending downward from a surface of the second nitride semiconductor stack opposite to the nitride light-emitting layer; and
a first transparent conductive oxide layer formed on the second nitride semiconductor stack, the plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack being substantially filled with the first transparent conductive oxide layer.
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Accused Products
Abstract
A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.
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Citations
42 Claims
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1. A light-emitting device comprising:
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a substrate;
a first nitride semiconductor stack formed on the substrate;
a nitride light-emitting layer formed on the first nitride semiconductor stack;
a second nitride semiconductor stack formed on the nitride light-emitting layer comprising a plurality of hexagonal-pyramid cavities extending downward from a surface of the second nitride semiconductor stack opposite to the nitride light-emitting layer; and
a first transparent conductive oxide layer formed on the second nitride semiconductor stack, the plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack being substantially filled with the first transparent conductive oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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Specification