Semiconductor device and method for manufacturing the same

• US 20050285231A1
• Filed: 06/21/2005
• Published: 12/29/2005
• Est. Priority Date: 06/29/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Goto, Yuugo, Maruyama, Junya, Sugiyama, Eiji, Dozen, Yoshitaka, Yamada, Daiki, Arao, Tatsuya, Tamura, Tomoko, Horikoshi, Nozomi
• Granted Patent: US 7,534,702 B2
• Time in Patent Office: Days
• US Class Current: 257/635
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15788 Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is flied in all directions as the integrated circuit is extremely thin. According to the present invention, multiple holes or grooves reaching the peel layer are provided, and a material body having a pattern shape that does not cover the holes (or grooves) and the device portion is provided, then, gas or liquid containing fluorine halide is introduced to remove selectively the peel layer.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a peel layer over a substrate having an insulating surface;

forming a layer including at least first and second portions over the peel layer;

forming at least one opening reaching the peel layer in the layer including first and second portions;

forming a material body between the first portion and the second portion;

introducing an etching material in the opening;

selectively removing the peel layer by the etching material wherein a portion of the peel layer remains without being etched, and the material body overlaps said portion; and

separating the first portion and the second portion from the substrate having the insulating surface.

2. The method for manufacturing the semiconductor device according to claim 1, wherein the first and second portions each have at least one semiconductor element.

3. The method for manufacturing the semiconductor device according to claim 1, wherein said etching material is gas or liquid containing fluorine halide.

4. The method for manufacturing the semiconductor device according to claim 1, wherein the opening is one or a plurality of a hole.

5. The method for manufacturing the semiconductor device according to claim 1, wherein the opening is one or a plurality of a groove.

6. A method for manufacturing a semiconductor device comprising the steps of:

forming a peel layer over a substrate having an insulating surface;

forming a layer including at least first and second thin film integrated circuits over the peel layer;

forming at least one opening reaching the peel layer in the layer including first and second thin film integrated circuits;

forming a material body over at least a part of a boundary between the first thin film integrated circuit and the second thin film integrated circuit;

introducing an etching material in the opening;

selectively removing the peel layer by the etching material wherein a portion of the peel layer remains without being etched, and the material body overlaps said portion; and

separating the first thin film integrated circuit and the second thin film integrated circuit from the substrate having the insulating surface.

7. The method for manufacturing the semiconductor device according to claim 6, wherein a top surface shape of the material body is a linear shape parallel to one side of the substrate or a lattice shape surrounding the first and second thin film integrated circuits.

8. The method for manufacturing the semiconductor device according to claim 6, wherein the material body is obtained by a screen printing method or a droplet discharging method.

9. The method for manufacturing the semiconductor device according to claim 6, wherein the material body is a material that does not chemically react with the etching material.

10. The method for manufacturing the semiconductor device according to claim 6, wherein said etching material is gas or liquid containing fluorine halide.

11. The method for manufacturing the semiconductor device according to claim 6, wherein the opening is one or a plurality of a hole.

12. The method for manufacturing the semiconductor device according to claim 6, wherein the opening is one or a plurality of a groove.

13. A method for manufacturing a semiconductor device comprising the steps of:

forming a peel layer over a substrate having an insulating surface;

forming a layer including at least first and second thin film integrated circuits over the peel layer;

forming at least one opening reaching the peel layer in the layer including first and second thin film integrated circuits;

forming a material body over at least a part of a boundary between the first thin film integrated circuit and the second thin film integrated circuit;

introducing an etching material in the opening;

selectively removing the peel layer by the etching material wherein a portion of the peel layer remains without being etched, and the material body overlaps said portion;

transferring the first and second thin film integrated circuits to a backing having an adhesion surface; and

dividing the first and second thin film integrated circuits into individual pieces or individual groups.

14. The method for manufacturing the semiconductor device according to claim 13, wherein a top surface shape of the material body is a linear shape parallel to one side of the substrate or a lattice shape surrounding the first and second thin film integrated circuits.

15. The method for manufacturing the semiconductor device according to claim 13, wherein the material body is obtained by a screen printing method or a droplet discharging method.

16. The method for manufacturing the semiconductor device according to claim 13, wherein the material body is a material that does not chemically react with the etching material.

17. The method for manufacturing the semiconductor device according to claim 13, wherein said etching material is gas or liquid containing fluorine halide.

18. The method for manufacturing the semiconductor device according to claim 13, wherein the opening is one or a plurality of a hole.

19. The method for manufacturing the semiconductor device according to claim 13, wherein the opening is one or a plurality of a groove.

20. A semiconductor device that is sealed with a first film and a second film, comprising:

a first insulating film, a layer including a semiconductor element over the first insulating film, and a second insulating film covering the layer including a semiconductor element, between the first film and the second film;

wherein the first film is in contact with the first insulating film and the second film is in contact with the second insulating film.

21. The semiconductor device according to claim 20, wherein the first film has a laminated structure.

22. The semiconductor device according to claim 20, wherein the second film has a laminated structure.

23. The semiconductor device according to claim 20, wherein the first insulating film is an inorganic insulating film containing silicon nitride or silicon oxide as its main components.

24. A semiconductor device that is sealed with a first film and a second film, comprising:

a first insulating film, a layer including a semiconductor element and an antenna over the first insulating film, and a second insulating film covering the layer including a semiconductor element and an antenna over the first insulating film, between the first film and the second film;

wherein the first film is in contact with the first insulating film and the second film is in contact with the second insulating film.

25. The semiconductor device according to claim 24, wherein the first film has a laminated structure.

26. The semiconductor device according to claim 24, wherein the second film has a laminated structure.

27. The semiconductor device according to claim 24, wherein the first insulating film is an inorganic insulating film containing silicon nitride or silicon oxide as its main components.

28. A semiconductor device that is sealed with a first film and a second film, comprising:

a first insulating film, a layer including a semiconductor element over the first insulating film, and an antenna over the layer including a semiconductor element, between the first film and the second film;

wherein the first film is in contact with the first insulating film and the second film is in contact with the antenna.

29. The semiconductor device according to claim 28, wherein the first film has a laminated structure.

30. The semiconductor device according to claim 28, wherein the second film has a laminated structure.

31. The semiconductor device according to claim 28, wherein the first insulating film is an inorganic insulating film containing silicon nitride or silicon oxide as its main components.