Integrated transistor module and method of fabricating same
First Claim
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1. An integrated transistor module, comprising:
- a lead frame defining at least one low-side land and at least one high-side land, a stepped portion of said lead frame mechanically and electrically interconnecting said low-side and high-side lands;
a low-side transistor mounted upon said low-side land, a drain of said transistor being electrically connected to said low-side land; and
a high-side transistor mounted upon said high-side land, a source of said high-side transistor electrically connected to said high-side land.
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Abstract
An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.
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Citations
24 Claims
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1. An integrated transistor module, comprising:
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a lead frame defining at least one low-side land and at least one high-side land, a stepped portion of said lead frame mechanically and electrically interconnecting said low-side and high-side lands;
a low-side transistor mounted upon said low-side land, a drain of said transistor being electrically connected to said low-side land; and
a high-side transistor mounted upon said high-side land, a source of said high-side transistor electrically connected to said high-side land. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A synchronous buck converter, comprising:
an integrated subassembly including a lead frame, at least one low-side transistor and at least one high-side transistor, said lead frame defining at least one low-side land and at least one high-side land, a stepped portion of said lead frame mechanically and electrically interconnecting said low-side and high-side lands, said low-side transistor mounted upon said low-side land, a drain of said transistor being electrically connected to said low-side land, said high-side transistor mounted upon said high-side land, a source of said high-side transistor electrically connected to said high-side land. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. An integrated subassembly, comprising:
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a lead frame defining at least one low-side land and at least one high-side land, a stepped portion of said lead frame mechanically and electrically interconnecting said low-side and high-side lands;
a high-side transistor mounted upon said high-side land, a source of said high-side transistor electrically connected to said high-side land; and
a molded portion covering a side of said substrate opposite said high-side land, said molding having an upper surface that is substantially coplanar relative to a side of said substrate opposite said low-side land. - View Dependent Claims (18, 19, 20)
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21. A method of fabricating an integrated transistor module, comprising:
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forming a leadframe that defines at least one low-side land and at least one high-side land vertically offset from said low-side land;
enclosing in an electrically insulating material a portion of said leadframe proximate said high-side land, an upper surface of said insulating material on a side of said leadframe that is opposite said high-side land being substantially coplanar relative to a side of said leadframe opposite said low-side land; and
mounting a high-side transistor upon said high-side land, a source of said high-side transistor being electrically connected to said high-side land. - View Dependent Claims (22, 23, 24)
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Specification