Conductive structures in integrated circuits

• US 20050285272A1
• Filed: 08/31/2005
• Published: 12/29/2005
• Est. Priority Date: 03/01/1999
• Status: Abandoned Application

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Farrar, Paul A.
• Application Number:
  US11/216,693
• Publication Number:
  US 20050285272A1
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76871 Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
• CPC Class Codes: H01L 21/76874 for electroless plating
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288

Abstract

A connective structure is formed by first depositing an insulator over a planarized surface. A trench is etched in the insulator. A barrier layer is deposited on the insulator. A seed layer is deposited on the barrier layer. The barrier layer and seed layer are selectively removed from areas of the insulator leaving an exposed seed area. A conductor is deposited on the exposed seed area. As many of these connective structures as desired may be stacked in an integrated circuit structure.

Claims

1. A connective structure comprising:

an insulator above a planarized surface, the insulator having a trench, the trench having a trench surface;

a barrier layer above the trench surface;

a seed layer above the barrier layer; and

a conductor above the seed layer.

2. The connective structure of claim 1, wherein the insulator has a depth, the trench has a depth and the depth of the trench is about equal to the depth of the insulator.

3. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer above the trench surface;

a seed layer above the barrier layer; and

a conductor above the seed layer.

4. The connective structure of claim 3, wherein the oxide layer is a silicon dioxide layer.

5. The connective structure of claim 3, wherein the oxide layer is a fluorinated silicon oxide layer.

6. A connective structure comprising:

a polymer layer above the planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer above the trench surface;

a seed layer above the barrier layer; and

a conductor above the seed layer.

7. The connective structure of claim 6, wherein the polymer layer is a polyimide layer.

8. The connective structure of claim 6, wherein the polymer layer is a foamed polymer layer.

9. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface;

a seed layer selected from the group consisting of gold, silver, and copper above the barrier layer; and

a conductor above the seed layer.

10. The connective structure of claim 9, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

11. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface;

a seed layer of gold above the barrier layer; and

a gold layer above the seed layer.

12. The connective structure of claim 11, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

13. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface; and

a gold layer above the barrier layer.

14. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface;

a seed layer of silver above the barrier layer; and

a silver layer above the barrier layer.

15. The connective structure of claim 14, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

16. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface; and

a silver layer above the barrier layer.

17. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface;

a seed layer of copper above the barrier layer; and

a copper layer above the seed layer.

18. The connective structure of claim 17, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

19. A connective structure comprising:

an oxide layer above the planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer tantalum above the trench surface; and

a copper layer above the barrier layer.

20. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface;

a seed layer selected from the group consisting of gold, silver, and copper above the barrier layer; and

a conductor layer above the seed layer.

21. The connective structure of claim 20, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

22. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface;

a seed layer of gold above the barrier layer; and

a gold layer above the seed layer.

23. The connective structure of claim 22, wherein the barrier layer has a depth of between fifty and one-thousand angstroms.

24. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface; and

a gold layer above the barrier layer.

25. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface;

a seed layer of silver above the barrier layer; and

a silver layer above the seed layer.

26. The connective structure of claim 25, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

27. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface; and

a silver layer above the barrier layer.

28. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface;

a seed layer of copper above the barrier layer; and

a copper layer above the seed layer.

29. The connective structure of claim 28, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

30. A connective structure comprising:

a polymer layer above a planarized surface, the polymer layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of titanium, zirconium, and hafnium above the trench surface;

a seed layer of copper above the barrier layer; and

a copper layer above the seed layer.

31. A connective structure comprising:

an oxide layer above a planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer selected from the group consisting of zirconium and titanium above the trench surface;

a seed layer of aluminum-copper above the barrier layer; and

a conductor above the seed layer.

32. The connective structure of claim 31, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.

33. A connective structure comprising:

an oxide layer above a planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer selected of zirconium above the trench surface;

a seed layer of aluminum-copper above the barrier layer; and

an aluminum layer above the seed layer.

34. The connective structure of claim 33, wherein the barrier layer has a depth of between fifty and one-thousand angstroms.

35. The connective structure of claim 33, wherein the aluminum layer fills the trench.

36. A connective structure comprising:

an oxide layer above a planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer of titanium above the trench surface;

a seed layer of aluminum-copper above the barrier layer; and

an aluminum layer above the seed layer.

37. The connective structure of claim 36, wherein the barrier layer has a depth o between fifty angstroms and one-thousand angstroms.

38. The connective structure of claim 36, where the aluminum layer fills the trench.

39. A connective structure comprising:

an oxide layer above a planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer of tantalum nitride above the trench surface;

a seed layer of copper above the barrier layer;

an conductor layer above the seed layer; and

a tantalum nitride layer above the conductor layer.

40. The connective structure of claim 39, wherein the depth of the barrier layer is approximately one-hundred angstroms.

41. The connective structure of claim 39, wherein the seed layer is approximately five-hundred angstroms of copper.

42. The connective structure of claim 39, wherein the barrier layer is between fifty angstroms and one-thousand angstroms.

43. The connective structure of claim 39, wherein the trench has a top and the seed layer is approximately five-hundred angstroms below the top of the trench.

44. The connective structure of claim 39, wherein the barrier layer has a depth of approximately five-hundred angstroms.

45. The connective structure of claim 39, wherein the oxide layer is a silicon dioxide layer.

46. The connective structure of claim 39, wherein the oxide layer is a fluorinated silicon oxide layer.

47. A connective structure comprising:

an oxide layer above a planarized surface, the oxide layer having a trench, the trench having a trench surface;

a barrier layer of tantalum nitride above the trench surface;

a seed layer of copper above the barrier layer;

a copper layer above the seed layer; and

a tantalum nitride layer above the copper layer.

48. The connective structure of claim 47, wherein the barrier layer has a depth of approximately one-hundred angstroms.

49. The connective structure of claim 47, wherein the seed layer has a depth of approximately five-hundred angstroms.

50. The connective structure of claim 47, wherein the barrier layer has a depth of between approximately fifty angstroms and one-thousand angstroms.

51. The connective structure of claim 47, wherein the trench has a top and the copper is approximately five-hundred angstroms below the top of the trench.

52. The connective structure of claim 47, wherein the tantalum nitride above the copper is deposited to a depth of approximately five-hundred angstroms.

53. The connective structure of claim 47, wherein the oxide layer is a silicon dioxide layer.

54. The connective structure of claim 47, wherein the oxide layer is a fluorinated silicon oxide layer.

55. A computer system comprising:

a processor;

a device coupled to the processor; and

a connective structure coupled to the device, the connective structure comprising;

an insulator above a planarized surface, the insulator having a trench, the trench having a trench surface;

a barrier layer above the trench surface;

a seed layer above the barrier layer; and

a conductor above the seed layer.

56. The computer system of claim 55, wherein the insulator has a depth, the trench has a depth and the depth of the trench is about equal to the depth of the insulator.

57. The computer system of claim 55, wherein the insulator layer includes an oxide layer.

58. The computer system of claim 57, wherein the oxide layer includes a silicon dioxide layer.

59. The computer system of claim 57, wherein the oxide layer is a fluorinated silicon oxide layer.

60. The computer system of claim 55, wherein the insulator layer includes a polymer.

61. The computer system of claim 60, wherein the polymer is a polyimide layer.

62. The computer system of claim 60, wherein the polymer is a foamed polymer layer.

63. The computer system of claim 55, wherein the barrier layer includes tantalum and wherein the seed layer is selected from the group consisting of gold, silver, and copper above the barrier layer.

64. The computer system of claim 63, wherein the barrier layer has a depth of between fifty angstroms and one-thousand angstroms.