Water-barrier performance of an encapsulating film
First Claim
1. A method for forming a multilayer encapsulating film over a substrate within a substrate processing system, comprising:
- depositing one or more silicon-containing inorganic barrier layers onto the surface of the substrate at a substrate temperature of about 200°
C. or lower, comprising delivering a first mixture of precursors and a hydrogen gas into the substrate processing system; and
depositing one or more low-dielectric constant material layers alternating with the one or more of silicon-containing inorganic barrier layers, comprising delivering a second mixture of precursors into the substrate processing system.
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Abstract
A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.
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Citations
35 Claims
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1. A method for forming a multilayer encapsulating film over a substrate within a substrate processing system, comprising:
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depositing one or more silicon-containing inorganic barrier layers onto the surface of the substrate at a substrate temperature of about 200°
C. or lower, comprising delivering a first mixture of precursors and a hydrogen gas into the substrate processing system; and
depositing one or more low-dielectric constant material layers alternating with the one or more of silicon-containing inorganic barrier layers, comprising delivering a second mixture of precursors into the substrate processing system. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 35)
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19. A method for forming a multilayer encapsulating film onto a substrate placed in a substrate processing system, comprising:
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depositing a plurality of silicon-containing inorganic barrier layers onto the surface of the substrate, comprising delivering a silicon-containing compound into the substrate processing system; and
depositing one or more low-dielectric constant material layers in between the one or more silicon-containing inorganic barrier layers at a substrate temperature of about 200°
C. or lower, comprising delivering a carbon-containing compound and a hydrogen gas into the substrate processing system. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method for depositing an encapsulating layer, having one or more layers of silicon-containing inorganic barrier materials and low-dielectric constant materials, onto a substrate in a substrate processing system, comprising:
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delivering a first mixture of precursors for a silicon-containing inorganic barrier layer and delivering a hydrogen gas into the substrate processing system;
controlling the temperature of the substrate to a temperature of about 150°
C. or lower and generating a plasma to deposit the silicon-containing inorganic barrier layer on the surface of the substrate;
delivering a second mixture of precursors for a low-dielectric constant material layer and delivering a hydrogen gas into the substrate processing system;
controlling the temperature of the substrate to a temperature of about 150°
C. or lower and generating a plasma to deposit the low-dielectric constant material layer onto the surface of the silicon-containing inorganic barrier layer; and
depositing the encapsulating layer onto the substrate by repeating the above mentioned steps until a thickness of the encapsulating layer of about 15,000 angstroms or more is obtained. - View Dependent Claims (30, 31, 32, 33, 34)
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Specification