Water-barrier performance of an encapsulating film

• US 20050287688A1
• Filed: 05/18/2005
• Published: 12/29/2005
• Est. Priority Date: 06/25/2004
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Won, Tae Kyung, Yadav, Sanjay
• Granted Patent: US 7,183,197 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 8/36 using ionised gases, e.g. ionitriding

Abstract

A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

Claims

1. A method for forming a multilayer encapsulating film over a substrate within a substrate processing system, comprising:

depositing one or more silicon-containing inorganic barrier layers onto the surface of the substrate at a substrate temperature of about 200°

C. or lower, comprising delivering a first mixture of precursors and a hydrogen gas into the substrate processing system; and

depositing one or more low-dielectric constant material layers alternating with the one or more of silicon-containing inorganic barrier layers, comprising delivering a second mixture of precursors into the substrate processing system.

2. The method of claim 1, wherein the thickness of the multilayer encapsulating film is about 15,000 angstroms or more.

3. The method of claim 1, the surface roughness of the multilayer encapsulating film is below about 40 angstroms or less.

4. The method of claim 1, wherein the water-barrier performance of the multilayer encapsulating film is improved to include a water vapor transmission rate (WVTR) of less than about 1.0×

10² grams per square meter per day at a condition of about 38°

C. and about 90% humidity.

5. The method of claim 1, wherein the water-barrier performance of the multilayer encapsulating film is improved with substantially no change of refractive index (RI) after a water test at a condition of about 100°

C. for about 100 hours.

6. The method of claim 1, wherein one layer of the one or more silicon-containing inorganic barrier layers is deposited as the first layer of the multilayer encapsulating film on the substrate surface.

7. The method of claim 1, wherein one layer of the one or more silicon-containing inorganic barrier layers is deposited as the last layer of the multilayer encapsulating film.

8. The method of claim 1, wherein the one or more of silicon-containing inorganic barrier layers is deposited at a substrate temperature from about 20°

C. to about 100°

C.

9. The method of claim 1, wherein the first mixture of precursors comprises a compound selected from the group consisting of silane, SiF₄, Si₂H₆, and combinations thereof.

10. The method of claim 9, wherein the first mixture of precursors further comprises a nitrogen-containing compound selected from the group consisting of ammonia (NH₃), nitrous oxide (N₂O), nitric oxide (NO), nitrogen gas (N₂) and combinations thereof.

11. The method of claim 9, wherein the first mixture of precursors further comprises a compound selected from the group consisting of a carbon-containing gas, an oxygen-containing gas, and combinations thereof.

12. The method of claim 1, wherein the one or more silicon-containing inorganic barrier layers comprise a material selected from the group consisting of silicon nitride, silicon oxynitride, silicon oxide, silicon carbide, and combinations thereof.

13. The method of claim 1, wherein the one or more low-dielectric constant material layers comprise a material selected from the group consisting of amorphous carbon, diamond-like carbon, and combinations thereof.

14. The method of claim 1, wherein the second mixture of precursors comprises a compound selected from the group consisting of acetylene (C₂H₂), ethane (C₂H₆), ethene (C₂H₄), methane (CH₄), propylene (C₃H₆), propyne (C₃H₄), propane (C₃H₈), butane (C₄H₁₀), butylene (C₄H₈), butadiene (C₄H₆), benzene (C_6H6), toluene (C₇H₈), and combinations thereof.

15. The method of claim 1, wherein a power density of the substrate processing system is maintained at between about 0.2 watts/cm² and 0.8 watts/cm² during deposition.

16. The method of claim 1, further comprising cleaning the surface of the substrate by a plasma generated from a gas selected from the group consisting of oxygen-containing gas, hydrogen-containing gas, nitrogen-containing gas, inert gas, and combinations thereof.

17. The method of claim 1, wherein the plurality of silicon-containing inorganic barrier layers and the one or more low-dielectric constant material layers are deposited in a single process chamber inside the substrate processing system.

18. The method of claim 1, wherein the multilayer encapsulating film is deposited over a device and lengthens the lifetime of the device to be more than about 1440 hours, tested under a condition of about 60°

C. and at high humidity of about 85%.

35. The method of claim 1, wherein the multilayer encapsulating film is deposited over a device and lengthens the lifetime of the device to be more than about 1440 hours, tested under a condition of about 60°

C. and at high humidity of about 85%.

19. A method for forming a multilayer encapsulating film onto a substrate placed in a substrate processing system, comprising:

depositing a plurality of silicon-containing inorganic barrier layers onto the surface of the substrate, comprising delivering a silicon-containing compound into the substrate processing system; and

depositing one or more low-dielectric constant material layers in between the one or more silicon-containing inorganic barrier layers at a substrate temperature of about 200°

C. or lower, comprising delivering a carbon-containing compound and a hydrogen gas into the substrate processing system.

20. The method of claim 19, wherein the film uniformity of the one or more low-dielectric constant material layers is improved to about ±

10% or less.

21. The method of claim 19, wherein the one or more silicon-containing inorganic barrier layers is deposited at a substrate temperature from about 20°

C. to about 100°

C.

22. The method of claim 19, wherein one layer of the plurality of silicon-containing inorganic barrier layers is deposited as the first layer of the multilayer encapsulating film on the substrate surface.

23. The method of claim 19, wherein one layer of the plurality of silicon-containing inorganic barrier layers is deposited as the last layer of the multilayer encapsulating film.

24. The method of claim 19, wherein the plurality of silicon-containing inorganic barrier layers comprise a material selected from the group consisting of silicon nitride, silicon oxynitride, silicon oxide, silicon carbide, and combinations thereof.

25. The method of claim 19, wherein the one or more low-dielectric constant material layers comprise a material selected from the group consisting of amorphous carbon, diamond-like carbon, and combinations thereof.

26. The method of claim 19, wherein the carbon-containing compound comprises a compound selected from the group consisting of acetylene (C₂H₂), ethane (C₂H₆), ethene (C₂H₄), methane (CH₄), propylene (C₃H₆), propyne (C₃H₄), propane (C₃H₈), butane (C₄H₁₀), butylene (C₄H₈), butadiene (C₄H₆), benzene (C₆H₆), toluene (C₇H₈), and combinations thereof.

27. The method of claim 19, wherein the one or more silicon-containing inorganic barrier layers and the one or more low-dielectric constant material layers are deposited in a single process chamber inside the substrate processing system.

28. The method of claim 19, wherein the multilayer encapsulating film is deposited over a device and lengthens the lifetime of the device to be more than about 1440 hours, tested under a condition of about 60°

C. and at high humidity of about 85%.

29. A method for depositing an encapsulating layer, having one or more layers of silicon-containing inorganic barrier materials and low-dielectric constant materials, onto a substrate in a substrate processing system, comprising:

delivering a first mixture of precursors for a silicon-containing inorganic barrier layer and delivering a hydrogen gas into the substrate processing system;

controlling the temperature of the substrate to a temperature of about 150°

C. or lower and generating a plasma to deposit the silicon-containing inorganic barrier layer on the surface of the substrate;

delivering a second mixture of precursors for a low-dielectric constant material layer and delivering a hydrogen gas into the substrate processing system;

controlling the temperature of the substrate to a temperature of about 150°

C. or lower and generating a plasma to deposit the low-dielectric constant material layer onto the surface of the silicon-containing inorganic barrier layer; and

depositing the encapsulating layer onto the substrate by repeating the above mentioned steps until a thickness of the encapsulating layer of about 15,000 angstroms or more is obtained.

30. The method of claim 29, wherein the silicon-containing inorganic barrier layer comprises a material selected from the group consisting of silicon nitride, silicon oxynitride, silicon oxide, silicon carbide, and combinations thereof.

31. The method of claim 29, wherein the low-dielectric constant material layer comprises a material selected from the group consisting of amorphous carbon, diamond-like carbon, and combinations thereof.

32. The method of claim 29, wherein a silicon-containing inorganic barrier layers is deposited on the surface of the substrate as the last material layer of the encapsulating layer.

33. The method of claim 29, wherein the temperature of the substrate is maintained at about 20°

C. to about 100°

C.

34. The method of claim 29, wherein the silicon-containing inorganic barrier layers and the low-dielectric constant material layers are deposited in a single process chamber inside the substrate processing system.