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Water-barrier performance of an encapsulating film

  • US 20050287688A1
  • Filed: 05/18/2005
  • Published: 12/29/2005
  • Est. Priority Date: 06/25/2004
  • Status: Active Grant
First Claim
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1. A method for forming a multilayer encapsulating film over a substrate within a substrate processing system, comprising:

  • depositing one or more silicon-containing inorganic barrier layers onto the surface of the substrate at a substrate temperature of about 200°

    C. or lower, comprising delivering a first mixture of precursors and a hydrogen gas into the substrate processing system; and

    depositing one or more low-dielectric constant material layers alternating with the one or more of silicon-containing inorganic barrier layers, comprising delivering a second mixture of precursors into the substrate processing system.

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