Method of manufacturing thin film transistor panel
First Claim
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1. A method of manufacturing a thin film transistor panel, the method comprising:
- forming a first signal line on a substrate;
forming in sequence a first insulating layer and a semiconductor layer on the first signal line;
patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer; and
forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer.
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Abstract
A method of manufacturing a thin film transistor panel is provided, which includes forming a first signal line on a substrate. The method also includes forming in sequence a first insulating layer and a semiconductor layer on the first signal line. The method further includes patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer. The method also includes forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer.
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Citations
25 Claims
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1. A method of manufacturing a thin film transistor panel, the method comprising:
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forming a first signal line on a substrate;
forming in sequence a first insulating layer and a semiconductor layer on the first signal line;
patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer; and
forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a thin film transistor panel, the method comprising:
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forming a first signal line on a substrate;
forming in sequence a first insulating layer and a semiconductor layer on the first signal line;
patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer, the patterned first insulating layer having a first contact hole to expose a portion of the first signal line;
forming a second signal line on the patterned semiconductor layer and the patterned insulating layer;
applying a second insulating layer on the second signal line; and
patterning the second insulating layer to have a second contact hole at the substantially same location as the first contact hole. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification