Plasma processing method, plasma processing apparatus, and computer recording medium
First Claim
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1. A plasma processing method applying processing to a substrate in a process vessel by using plasma, comprising the steps of:
- introducing an inert gas, an oxygen gas, and a nitrogen gas into the process vessel;
making the gases into plasma by an antenna; and
forming an insulating film by applying oxidation processing and nitridation processing at the same time to a surface of the substrate by the plasma.
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Abstract
According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.
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Citations
29 Claims
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1. A plasma processing method applying processing to a substrate in a process vessel by using plasma, comprising the steps of:
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introducing an inert gas, an oxygen gas, and a nitrogen gas into the process vessel;
making the gases into plasma by an antenna; and
forming an insulating film by applying oxidation processing and nitridation processing at the same time to a surface of the substrate by the plasma. - View Dependent Claims (2, 5, 6, 9, 11, 13, 14)
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3. A plasma processing method forming an insulating film onto a substrate in a process vessel by using plasma, comprising the steps of:
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supplying an inert gas, an oxygen gas, and a nitrogen gas into the process vessel;
supplying a microwave into the process vessel through an antenna to make the supplied gases into plasma by the microwave; and
forming the insulating film on the substrate by plasma processing of the inert gas, the oxygen gas, and the nitrogen gas. - View Dependent Claims (4, 7, 8, 10, 12, 15, 16)
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17. A plasma processing apparatus applying plasma processing to a substrate, comprising:
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a process vessel containing the semiconductor substrate;
a microwave introducing portion introducing a microwave through an antenna and a dielectric which are provided to said process vessel; and
a gas supply portion supplying an inert gas, an oxygen gas, and a nitrogen gas to said process vessel, wherein the inert gas, the oxygen gas, and the nitrogen gas are supplied by said gas supply portion into said process vessel, the microwave is introduced through said microwave introducing portion into said process vessel to make the gases into plasma, and oxidation processing and nitridation processing are applied at the same time to a surface of the substrate by the plasma to form an insulating film. - View Dependent Claims (18, 19, 20)
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21. A plasma processing method applying processing to a substrate in a process vessel by using plasma, comprising the steps of:
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introducing an inert gas, an oxygen gas, and a nitrogen gas into the process vessel to form plasma of the inert gas, the oxygen gas, and the nitrogen gas; and
forming an insulating film on the substrate by applying oxidation processing and nitridation processing at the same time to a surface of the substrate by the plasma, wherein electron temperature of the plasma is 1.0 (eV) or less. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A computer recording medium containing software allowing a plasma processing apparatus to execute a plasma processing method,
wherein the plasma processing method comprises the steps of: -
introducing an inert gas, an oxygen gas, and a nitrogen gas into a process vessel to form plasma of the inert gas, the oxygen gas, and the nitrogen gas; and
applying oxidation processing and nitridation processing at the same time to a surface of the substrate by the plasma to form an insulating film on the substrate, wherein electron temperature of the plasma is 1.0 (eV) or less.
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Specification