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Diffusion barrier process for routing polysilicon contacts to a metallization layer

  • US 20050287793A1
  • Filed: 06/29/2004
  • Published: 12/29/2005
  • Est. Priority Date: 06/29/2004
  • Status: Abandoned Application
First Claim
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1. A portion of an integrated circuit, comprising:

  • a polysilicon contact plug in contact with a first active area of the integrated circuit and a liner material overlying the polysilicon plug; and

    a metal contact in contact with a second active area of the integrated circuit; and

    wherein the metal contact and the liner material of the polysilicon contact plug are formed concurrently.

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