Radiopaque coating for biomedical devices

• US 20050288773A1
• Filed: 06/13/2005
• Published: 12/29/2005
• Est. Priority Date: 01/22/2004
• Status: Abandoned Application

• Current Assignee: Isoflux Incorporated
• Original Assignee: Isoflux Incorporated
• Inventors: Glocker, David A., Romach, Mark M.
• Application Number:
  US11/151,583
• Publication Number:
  US 20050288773A1
• Time in Patent Office: Days
• US Class Current: 623/1.44
• CPC Class Codes: A61F 2/82 Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents stent-grafts for tubular structures of the body other than blood vessels A61F2/04; stent-grafts for blood vessels A61F2/07; instruments specially adapted for placement or removal of stents or stent-grafts A61F2/95; for closing wounds, or holding wounds closed A61B17/04 - A61B17/115; dilators A61M29/00
• CPC Class Codes: A61F 2250/0098 radio-opaque, e.g. radio-opaque markers

Abstract

A medical device has a porous radiopaque coating that can withstand the high strains inherent in the use of such devices without delamination. A coating of Ta is applied to a medical device, such as a stent, by vapor deposition so that the thermomechanical properties of the stent are not adversely affected. The coating preferable has high emissivity. The coating is applied via a generally oblique coating flux or a low energy coating flux.

Claims

1. A medical device comprising:

a. a body at least partially comprising a radio transparent material; and

b. a porous Ta coating on at least a portion of the body;

wherein the Ta coating is sufficiently thick so that the device is radiopaque and the Ta coating is able to withstand the strains produced in the use of the device without unacceptable flaking;

wherein the Ta is applied to the body via one of a generally oblique coating flux or a low energy coating flux.

2. The medical device of claim 1 in which said Ta coating consists primarily of the bcc crystalline phase.

3. The medical device of claim 1 in which said coating thickness is between approximately 3 and 10 microns.

4. The medical device of claim 1 in which said device is a stent.

5. The medical device of claim 1 in which said device is a guidewire.

6. The medical device of claim 1 wherein the device is an intraluminal device.

7. The medical device of claim 1 wherein the Ta coating is applied to the body by a physical vapor deposition process.

8. The medical device of claim 7 wherein the physical vapor deposition process includes one of the group of sputtering, cathodic arc deposition or thermal evaporation.

9. The medical device of claim 1 further comprising a material in the Ta coating, wherein the material is intended to diffuse out over time.

10. A process for depositing a Ta layer on a medical device consisting of the steps of:

a. maintaining a background pressure of inert gas in a sputter coating system containing at least one Ta sputter target;

b. applying a voltage to said Ta target to cause sputtering; and

c. sputtering for a period of time to produce the desired coating thickness;

wherein the Ta layer has an emissivity in the visible spectrum of at least 80% and wherein the Ta is applied to the medical device via one of a generally oblique coating flux or a low energy coating flux.

11. The process of claim 10 wherein the equilibrium temperature of said device during deposition is controlled indirectly by said process.

12. The process of claim 10 in which the equilibrium temperature is between 150 and 450 C.

13. The process of claim 10 in which a voltage is applied to said medical device during said process.

14. The process of claim 13 in which said voltage comprises an initial high voltage to preclean said device for a first period of time.

15. The process of claim 14 in which said initial high voltage is between 100 and 500 volts.

16. The process of claim 14 in which said first period of time is between 1 minute and 20 minutes.

17. The process of claim 13 in which said voltage comprises a second, lower voltage applied for a second period of time.

18. The process of claim 17 in which said lower voltage is between 10 and 100 volts.

19. The process of claim 17 in which said second period of time is between 1 hour and 5 hours.

20. The process of claim 10 in which said inert gas is from the group comprising Ar, Kr and Xe.

21. The process of claim 10 in which said voltage produces a deposition rate of 1 to 5 microns per hour.

22. The process of claim 10 wherein the Ta layer is porous.

23. The process of claim 22 further comprising the steps of incorporating a material into the pores, wherein the material is intended to diffuse out over time.

24. A medical device comprising:

a. a body having an outer layer; and

b. a radiopaque coating on at least a portion of the outer layer;

wherein the coating is applied via one of a generally oblique coating flux or a low energy coating flux using a physical vapor deposition process.

25. A medical device comprising:

a. a body at least partially comprising a radio transparent material;

b. a Ta coating on at least a portion of the body;

wherein the Ta coating is able to withstand the strains produced in the use of the device without unacceptable flaking and wherein the Ta is applied to the body via one of the generally oblique coating flux or a low energy coating flux.