Systems and apparatus for atomic-layer deposition

• US 20060000412A1
• Filed: 08/29/2005
• Published: 01/05/2006
• Est. Priority Date: 05/02/2002
• Status: Abandoned Application

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ahn, Kie Y., Forbes, Leonard
• Application Number:
  US11/215,451
• Publication Number:
  US 20060000412A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas

Abstract

The present inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary method entails providing an outer chamber enclosing a substrate, forming an inner chamber within the outer chamber, and introducing an oxidant into the inner chamber, and introducing an aluminum precursor into the inner chamber. The inner chamber has a smaller volume than the outer chamber, which ultimately requires less time to fill and purge and thus promises to reduce cycle times for deposition of materials, such as aluminum oxide.

Claims

1. An atomic-layer deposition system comprising:

a chamber; and

a gas-distribution fixture in the chamber, the fixture including a gas-distribution surface having a first plurality of holes and a second plurality of holes and a gas-confinement member extending from the gas-distribution surface around the first and second plurality of holes, wherein the first and second pluralities of holes are isolated from each other such that gases that flow into the first and second pluralities of holes do not mix inside the gas-distribution fixture.

2. The atomic-layer deposition system of claim 1, wherein the gas-confinement member surrounds all the holes.

3. The atomic-layer deposition system of claim 1, wherein the gas-confinement member consists essentially of a material different from that of the gas-distribution surface.

4. The atomic-layer deposition system of claim 1, wherein the gas-distribution surface is substantially planar and includes silicon and silicon oxide.

5. The atomic-layer deposition system of claim 1, wherein the atomic-layer deposition system includes an RF source coupled to wafer holder.

6. The atomic-layer deposition system of claim 1, wherein the atomic-layer deposition system includes:

a wafer holder having a wafer-support surface confronting the gas-distribution surface;

a first source to couple a precursor to the first plurality of holes in the gas-distribution fixture; and

a second source to couple an oxidant to the second plurality of holes in the gas-distribution fixture.

7. The atomic-layer deposition system of claim 6, wherein the gas-confinement member extends perpendicularly from the gas-distribution surface toward the wafer-support surface.

8. The atomic-layer deposition system of claim 6, wherein the wafer-support surface is substantially parallel to the gas-distribution surface.

9. The atomic-layer deposition system of claim 6, wherein the first source includes trimethylaluminum as the precursor and the second source includes water as the oxidant.

10. An atomic-layer deposition system comprising:

a chamber;

a gas-distribution fixture in the chamber, the fixture including;

a gas-distribution member including;

a plurality of first channels and a plurality of second channels; and

a gas-distribution surface having a plurality of first holes and a plurality of second holes, with each of the first holes in fluid communication with at least one of the first channels and each of the second holes in fluid communication with at least one the second channels, the plurality of first holes isolated from the plurality of second holes such that gases that flow into the plurality of first holes and the plurality of second holes do not mix inside the gas-distribution fixture; and

a gas-confinement member within the first chamber and extending around the plurality of first holes and the plurality of second holes;

a wafer holder having a wafer-support surface confronting the first and second holes;

a first source to couple a precursor to the plurality of first channels; and

a second source to couple an oxidant to the plurality of second holes.

11. The atomic-layer deposition system of claim 10, wherein the gas-confinement member extends perpendicularly relative to the gas-distribution surface.

12. The atomic-layer deposition system of claim 10, wherein the gas-confinement member surrounds all the holes.

13. The atomic-layer deposition system of claim 10, wherein the gas-confinement member consists essentially of a material different from that of the gas-distribution surface.

14. The atomic-layer deposition system of claim 10, wherein the gas-distribution surface is substantially planar and includes silicon.

15. The atomic-layer deposition system of claim 10, wherein the first source includes trimethylaluminum as the precursor and the second source includes water as the oxidant.

16. An atomic-layer deposition system comprising:

a first chamber for confining gases;

a second chamber within the first chamber for at least partially containing a substrate during deposition; and

a gas-distribution fixture in the second chamber, the fixture including a gas-distribution surface having a first plurality of holes and a second plurality of holes and a gas-confinement member extending from the gas-distribution surface around the first and second plurality of holes, wherein the first and second pluralities of holes are isolated from each other such that gases that flow into the first and second pluralities of holes do not mix inside the gas-distribution fixture.

17. The atomic-layer deposition system of claim 16, wherein the first chamber is a right cylindrical chamber.

18. The atomic-layer deposition system of claim 16, wherein the second chamber includes a surface of a substrate-support structure.

19. The atomic-layer deposition system of claim 16, wherein atomic-layer deposition system includes a supply essentially of trimethylaluminum coupled to the second chamber and a supply essentially of water coupled to the second chamber.

20. An atomic-layer deposition system comprising:

a first chamber having an interior sidewall; and

a second chamber within the first chamber, the second chamber including;

a gas-distribution fixture in the second chamber including a gas-distribution member having a first plurality of holes and a second plurality of holes that define a gas-distribution surface, wherein the first and second pluralities of holes are isolated from each other such that gases that flow into the first and second pluralities of holes do not mix inside the gas-distribution fixture;

a gas-confinement surface at least partly encircling the plurality of holes, the gas-confinement surface spaced from the interior sidewall of the first chamber and nonparallel to the gas-distribution surface; and

a wafer-support surface confronting the gas-distribution surface.

21. The atomic-layer deposition system of claim 20, wherein the gas-confinement surface is substantially perpendicular to the gas-distribution surface.

22. The atomic-layer deposition system of claim 20, wherein the wafer support surface is substantially parallel to the gas-distribution surface.

23. The atomic-layer deposition system of claim 20, wherein the gas-confinement surface consists essentially of a material different from that of the gas-distribution surface.

24. The atomic-layer deposition system of claim 20, wherein the gas-distribution surface is substantially planar and includes silicon.

25. The atomic-layer deposition system of claim 20, wherein the atomic-layer deposition system includes:

a first source to couple an aluminum precursor to the second chamber; and

a second source to couple an oxidant to the second chamber.

26. An atomic-layer deposition system comprising:

a first chamber having an interior sidewall;

a second chamber within the first chamber, the second chamber including;

a gas-distribution fixture in the second chamber including a gas-distribution member having a first plurality of holes and a second plurality of holes that define a gas-distribution surface, wherein the first and second pluralities of holes are isolated from each other such that gases that flow into the first and second pluralities of holes do not mix inside the gas-distribution fixture;

a gas-confinement wall at least partly encircling the plurality of holes, the gas-confinement wall spaced from the interior sidewall of the first chamber and nonparallel to the gas-distribution surface; and

a wafer-support surface confronting the gas-distribution surface;

a first source to couple a precursor to the second chamber; and

a second source to couple an oxidant to the second chamber.

27. The atomic-layer deposition system of claim 26, wherein the wafer-support surface contacts the gas-confinement wall.

28. The atomic-layer deposition system of claim 26, wherein the gas-confinement wall is substantially perpendicular to the gas-distribution surface and the wafer-support surface.

29. The atomic-layer deposition system of claim 26, wherein the wall has a uniform height measured from the gas-distribution surface.

30. The atomic-layer deposition system of claim 26, wherein the wall consists essentially of a stainless steel.

31. The atomic-layer deposition system of claim 26, wherein the atomic-layer deposition system includes a first plurality of channels in fluid communication with a first subset of the holes and second plurality of channels in fluid communication with a second subset of the holes.

32. The atomic-layer deposition system of claim 26, wherein the first source includes trimethylaluminum as the precursor and the second source includes water as the oxidant.