Led and fabrication method of same

• US 20060001055A1
• Filed: 02/22/2005
• Published: 01/05/2006
• Est. Priority Date: 02/23/2004
• Status: Abandoned Application

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Ueno, Kazuhiko, Tani, Masanao, Yasuda, Yoshiaki
• Application Number:
  US11/062,772
• Publication Number:
  US 20060001055A1
• Time in Patent Office: Days
• US Class Current: 257/257
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

An LED can include a silicon substrate and a pair of electrodes formed inside a horn that is formed on the silicon substrate by anisotropic etching. The LED can include an LED chip mounted inside the horn, the LED chip being electrically connected to the pair of electrodes. A resin mold made of a resin material can be filled in the horn.

Claims

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38. An LED comprising:

a silicon substrate including a horn formed by anisotropic etching;

a pair of electrodes located inside the horn;

an LED chip located inside the horn, the LED chip being electrically connected to the pair of electrodes; and

a resin mold made of a resin material that is filled in the horn.

39. The LED according to claim 38, wherein

the horn is formed by etching the silicon substrate from an upper surface of the silicon substrate to an intermediate height, and wherein

each electrode is formed so as to extend along the surface of the silicon substrate from a bottom surface of the horn via side surfaces of the horn.

40. The LED according to claim 38, wherein the silicon substrate includes a flat first substrate having a surface on which the electrodes are formed and a second substrate laminated on the first substrate, the second substrate being provided with the horn, and the horn vertically penetrates the second substrate.

41. The LED according to claim 38, wherein the LED chip is die-bonded to one of the pair of electrodes inside the horn and is wire-bonded to the other of the pair of electrodes inside the horn.

42. The LED according to claim 38, wherein the LED chip is mounted so as to straddle the pair of electrodes inside the horn, with electrodes formed at both lower side edges of the LED chip being electrically connected respectively to the pair of electrodes inside the horn.

43. The LED according to claim 38, wherein the silicon substrate is formed with a (100) surface serving as an outer surface, and wherein the side surfaces of the horn are formed as (111) surfaces.

44. The LED according to claim 38, wherein the horn includes a side surface that includes a mirror surface.

45. The LED according to claim 38, wherein an actuator and an IC circuit are located adjacent to the horn on the silicon substrate.

46. The LED according to claim 38, wherein granular phosphors are mixed in with the resin material forming the resin mold.

47. A method of fabricating an LED comprising:

providing a silicon substrate, the silicon substrate having a surface;

forming a horn in the surface of the silicon substrate by anisotropic etching;

locating a pair of electrodes in the horn;

mounting an LED chip inside the horn such that the LED chip is electrically connected to the pair of electrodes; and

filling the interior of the horn with a resin material to form a resin mold.

48. An LED comprising:

a silicon substrate;

a horn formed on the silicon substrate by liquid phase etching;

at least two electrodes located inside the horn; and

at least one LED chip located inside the horn, the LED chip being electrically connected to the electrodes.

1. (canceled)

49. The LED according to claim 48, wherein

the electrodes are drawn out from the horn, and are electrically connected with lead frames.

50. The LED according to claim 48, wherein

the horn is formed by etching the silicon substrate from an upper surface of the silicon substrate to a height above a lower surface so as not to pass completely through the substrate, and wherein

each electrode extends along the surface of the silicon substrate from a bottom surface of the horn via a side surface of the horn.

51. The LED according to claim 48, wherein

the silicon substrate includes a flat first substrate having a surface on which the electrodes are formed and a second substrate laminated on the first substrate, the second substrate being provided with the horn, and the horn vertically penetrates the second substrate.

52. The LED according to claim 48, wherein

each LED chip is die-bonded to one of the electrodes inside the horn and is wire-bonded to another of the electrodes inside the horn.

53. The LED according to claim 48, wherein

the at least one LED chip is mounted so as to straddle two of the electrodes inside the horn, and including chip electrodes formed at both lower side edges of the LED chip being electrically connected respectively to the two electrodes inside the horn.

54. The LED according to claim 48, wherein

the horn includes side surfaces formed as at least one of (111), (110) and (100) surfaces.

55. The LED according to claim 48, wherein

the horn includes side surfaces provided with a mirror surface.

56. The LED according to claim 48, wherein

an actuator is located on the silicon substrate.

57. The LED according to claim 48, wherein

an electronic circuit is located on the silicon substrate.

58. The LED according to claim 48, wherein

the electronic circuit is at least one of a photo-diode, a transistor and an IC.

59. The LED according to claim 48, wherein

a resin is filled in the horn.

60. The LED according to claim 59, wherein

phosphors are mixed in with the resin.

61. The LED according to claim 48, wherein

the horn has a partition wall that surrounds each LED chip respectively.

62. The LED according to claim 61, wherein

an upper end of the partition wall is flat and substantially co-planar with an upper surface of the silicon substrate.

63. The LED according to claim 61, wherein

an upper end of the partition has a crest line that is substantially co-planar with an upper surface of the silicon substrate.

64. The LED according to claim 61, wherein

the side surface of the partition wall has one of a flat, convex and concave form.

65. The LED according to claim 61, wherein

a side surface of the partition is formed as at least one of a (111), a (110) and a (100) surface.

63-1. The LED according to claim 61, wherein

an upper end of the partition has a crest line located lower than an upper surface of the silicon substrate.

66. An LED comprising:

a silicon substrate;

a horn formed on the silicon-substrate by liquid phase etching;

at least two contact-holes formed on the silicon substrate by liquid phase etching;

at least two electrodes extending from an inside of the horn to a lower end of the contact-holes; and

at least one LED chip located inside the horn, the LED chip being electrically connected to the electrodes.

69. The LED according to claim 66, wherein

a metal thin film is provided on a lower surface of the silicon substrate at least in a region of the horn.

70. The LED according to claim 69, wherein

the silicon substrate connectable to a heat-radiating member via the metal thin film.

67. An LED comprising:

a silicon substrate;

a horn formed on the silicon substrate by liquid phase etching;

at least two contact-edges formed on the silicon substrate by liquid phase etching;

at least two electrodes extending from an inside of the horn to a lower end of the contact-edges; and

at least one LED chip located inside the horn, the LED chip being electrically connected to the electrodes.

68. The LED according to claim 67, wherein

the silicon substrate has an LED-mounted side on which the LED is located, and has a rectangular form as viewed from the LED-mounted side, and at least one of the contact-edges is formed at least on one of four corners of the rectangular form.

71. The LED according to claim 67, wherein

a lens is located on the horn.

72. The LED according to claim 71, wherein

the lens is a convex lens.

73. The LED according to claim 71, wherein

the lens is a spherical lens.

74. The LED according to claim 71, wherein

a recess for positioning the lens is formed adjacent the horn on the silicon substrate.

84. The LED according to claim 67, wherein

a metal thin film is provided on the lower surface of the silicon substrate at least in the region of the horn.

75. A method of fabricating an LED comprising:

forming a horn on a silicon substrate by liquid phase etching;

forming at least two electrodes inside the horn;

mounting at least one LED chip inside the horn such that the LED chip is electrically connected to the electrodes.

76. The method according to claim 75, further comprising:

filling the interior of the horn with a resin material to form a resin mold.

77. The method according to claim 75, wherein

forming a horn on the silicon substrate by liquid phase etching includes forming a plurality of horns adjacent each other, and forming a partition wall between the horns.

78. The method according to claim 77, wherein

forming the partition wall includes forming an upper end of the partition wall such that it is substantially co-planar with, or lower than, an upper surface of the silicon substrate.

79. The method according to claim 77, wherein

a surface of the partition wall has one of a convex and a concave form.

80. A method of fabricating an LED comprising:

providing a silicon substrate;

forming an oxidized film on a surface of the silicon substrate;

patterning the oxidized film so as to expose each portion of the silicon substrate that is to form a contact-hole;

forming a shallow recess in each portion that is to form a contact-hole by liquid phase etching;

patterning the oxidized film so as to expose each portion of the silicon substrate that is to form a horn;

forming horns and contact-holes on the silicon substrate by liquid phase etching;

providing an insulating film on the surface of the silicon substrate;

forming electrode-patterns on the silicon substrate;

mounting at least one LED chip inside each horn such that the LED chip is electrically connected to the electrodes; and

cutting out at least a portion of the silicon substrate.

81. A method of fabricating an LED comprising:

providing a silicon substrate;

forming an oxidized film on a surface of the silicon substrate;

patterning the oxidized film so as to expose each portion of the silicon substrate that is to form a through-bore;

forming a shallow recess in each portion that is to form a through-bore by liquid phase etching;

patterning the oxidized film so as to expose each portion of the silicon substrate that is to form a horn;

forming horns and through-bores on the silicon substrate by liquid phase etching;

providing an insulating film on the surface of the silicon substrate;

providing electrode-patterns on the silicon substrate;

mounting at least one LED chip inside each horn such that the LED chip is electrically connected to the electrodes; and

cutting out at least a portion of the silicon substrate so as to cross each through-bore and form a contact edge.

82. A method of fabricating an LED comprising:

forming at least two electrodes on a first silicon substrate;

forming through-bores on a second silicon substrate by liquid phase etching and forming a horn on a side wall of each through-bore;

bonding the first and second silicon substrates to each other so as to expose the electrodes in each through-bore; and

mounting at least one LED chip inside the horn such that the LED chip is electrically connected to the electrodes.

83. The method according to claim 82, further including:

at least one of

forming a mirror surface in an inner surface of each through-bore,

filling the interior of the horn with a resin material to form a resin mold, and

insulating the surfaces of silicon substrates by oxidized film.