Raman spectroscopy method, Raman spectroscopy system and Raman spectroscopy device

• US 20060001872A1
• Filed: 01/05/2005
• Published: 01/05/2006
• Est. Priority Date: 01/07/2004
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Naya, Masayuki
• Granted Patent: US 7,224,451 B2
• Time in Patent Office: Days
• US Class Current: 356/301
• CPC Class Codes: G01N 21/658 enhancement Raman, e.g. surface plasmons

Abstract

In a Raman spectroscopy, the surface of metal film which is formed on a dielectric substrate in thickness of 50 to 200 nm and is characterized in that a plurality of fine holes satisfying the conditions defined by the following formulae are formed is caused to adsorb the material to be analyzed, light is projected onto the surface and the scattering light scattered by the surface is separated to obtain a spectrum of the scattering light, $\lambda =a{\left(\frac{\varepsilon 1·\mathrm{\varepsilon 2}}{\mathrm{\varepsilon 1}+\mathrm{\varepsilon 2}}\right)}^{\frac{1}{2}}$
d<λ
wherein λ represents the wavelength of the projected light, a represents the cycle of the fine holes, d represents the diameter of the fine holes, ε1 represents the dielectric constant of the metal film and ε2 represents the dielectric constant of the medium around the surface of the metal film.

Claims

1. A Raman spectroscopy method in which a spectrum is obtained by separating scattering light obtained by projecting light of a wavelength of λ

onto a material and light having a wavelength different from λ

is detected, the method comprising the steps of

causing the surface of metal film which is formed on a dielectric substrate in thickness of 50 to 200 nm and is characterized in that a plurality of fine holes satisfying the conditions defined by the following formulae are formed to adsorb the material to be analyzed,

projecting light onto the surface and

separating the scattering light scattered by the surface to obtain a spectrum of the scattering light,

$\mathrm{\lambda <br><br>}=a<br><br>\text{\hspace{1em}<br><br>}<br><br>{\left(\frac{\mathrm{\varepsilon <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>1·<br><br>\mathrm{\varepsilon <br><br>2}}{\mathrm{\varepsilon <br><br>1}+\mathrm{\varepsilon <br><br>2}}\right)}^{\frac{1}{2}}$
d<

λ

wherein λ

represents the wavelength of the projected light, a represents the cycle of the fine holes, d represents the diameter of the fine holes, ε

1 represents the dielectric constant of the metal film and ε

2 represents the dielectric constant of the medium around the surface of the metal film.

2. A Raman spectroscopy method as defined in claim 1 in which light whose central wavelength λ

0 is in the range represented by the following formula is projected,

3. A Raman spectroscopy system in which a spectrum is obtained by separating scattering light obtained by projecting light of a wavelength of λ

onto a material and light having a wavelength different from λ

is detected, the system comprising

a Raman spectroscopy device provided with metal film which is formed on a dielectric substrate in thickness of 50 to 200 nm and is characterized in that a plurality of fine holes satisfying the conditions defined by the following formulae are formed,

a light projecting means which projects light onto the surface of the Raman spectroscopy device in which the fine holes are formed and

a spectral means which separates the light projected by the light projecting means and scattered by the surface to obtain a spectrum of the scattering light,

$\mathrm{\lambda <br><br>}=a<br><br>\text{\hspace{1em}<br><br>}<br><br>{\left(\frac{\mathrm{\varepsilon <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>1·<br><br>\mathrm{\varepsilon <br><br>2}}{\mathrm{\varepsilon <br><br>1}+\mathrm{\varepsilon <br><br>2}}\right)}^{\frac{1}{2}}$
d<

λ

wherein λ

represents the wavelength of the projected light, a represents the cycle of the fine holes, d represents the diameter of the fine holes, ε

1 represents the dielectric constant of the metal film and ε

2 represents the dielectric constant of the medium around the surface of the metal film. 4. A Raman spectroscopy device for use in a Raman spectroscopy in which a spectrum is obtained by separating scattering light obtained by projecting light of a wavelength of λ

onto a material and light having a wavelength different from λ

is detected, the device comprising a dielectric substrate and metal film formed on the substrate in thickness of 50 to 200 nm and is characterized in that a plurality of fine holes satisfying the conditions defined by the following formulae are formed,

$\mathrm{\lambda <br><br>}=a<br><br>\text{\hspace{1em}<br><br>}<br><br>{\left(\frac{\mathrm{\varepsilon <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>1·<br><br>\mathrm{\varepsilon <br><br>2}}{\mathrm{\varepsilon <br><br>1}+\mathrm{\varepsilon <br><br>2}}\right)}^{\frac{1}{2}}$
d<

λ

wherein λ

represents the wavelength of the projected light, a represents the cycle of the fine holes, d represents the diameter of the fine holes, ε

1 represents the dielectric constant of the metal film and ε

2 represents the dielectric constant of the medium around the surface of the metal film.