Semiconductor devices shared element(s) apparatus and method

• US 20060003475A1
• Filed: 06/30/2004
• Published: 01/05/2006
• Est. Priority Date: 06/30/2004
• Status: Active Grant

• Current Assignee: Motorola Solutions, Inc.
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Zhang, Jie, Wielgus, Jerzy, Gamota, Daniel R., Brazis, Paul W., Adewole, Hakeem B.
• Granted Patent: US 7,244,626 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 71/13 using printing techniques, e.g. ink-jet printing or screen printing
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

Two or more semiconductor devices (21 and 22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23 and 24). At least one such printed component (25) is shared by both such semiconductor devices.

Claims

1. A method to facilitate fabrication of at least two semiconductor devices on a shared substrate comprising:

providing the shared substrate;

forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least one integral printed device element comprised of at least one ink.

2. The method of claim 1 wherein providing the shared substrate further comprises providing a flexible shared substrate.

3. The method of claim 2 wherein providing a flexible shared substrate further comprises providing a polyester shared substrate.

4. The method of claim 1 wherein forming at least a first and second semiconductor device on the shared substrate further comprises forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least a dielectric layer.

5. The method of claim 1 wherein forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least one integral printed device element comprised of at least one ink further comprises forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least a bias electrode.

6. The method of claim 1 wherein forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least one integral printed device element comprised of at least one ink further comprises forming at least a first and second semiconductor device that each have a corresponding discrete semiconductor element.

7. The method of claim 1 wherein forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least one integral printed device element comprised of at least one ink further comprises forming at least a first and second semiconductor device that each share a discrete semiconductor element.

8. The method of claim 1 wherein forming at least a first and second semiconductor device on the shared substrate, wherein the first and second semiconductor devices additionally share at least one integral printed device element comprised of at least one ink further comprises forming a multi-active device circuit.

9. The method of claim 8 wherein forming a multi-active device circuit further comprises forming an inverter circuit.

10. The method of claim 9 wherein the inverter circuit consists of at least three semiconductor devices, wherein all three of the at least three semiconductor devices share at least a bias electrode.

11. An apparatus comprising:

a substrate;

a first semiconductor device formed on the substrate and being comprised of a first plurality of printed elements comprised of at least one ink;

a second semiconductor device formed on the substrate and being comprised of a second plurality of elements, wherein at least one element of the second plurality of elements comprises an element that further comprises an element of the first plurality of printed elements.

12. The apparatus of claim 11 wherein the substrate comprises a flexible substrate.

13. The apparatus of claim 12 wherein the flexible substrate comprises a polyester substrate.

14. The apparatus of claim 12 wherein the flexible substrate comprises a paper substrate.

15. The apparatus of claim 11 wherein the at least one element of the second plurality of elements that comprises an element that further comprises an element of the first plurality of printed elements comprises a dielectric layer.

16. The apparatus of claim 11 wherein the at least one element of the second plurality of elements that comprises an element that further comprises an element of the first plurality of printed elements comprises a bias electrode.

17. The apparatus of claim 16 wherein the bias electrode comprises a drain electrode of the first semiconductor device and a source electrode of the second semiconductor device.

18. The apparatus of claim 11 wherein the at least one element of the second plurality of elements that comprises an element that further comprises an element of the first plurality of printed elements comprises a semiconductor element.

19. The apparatus of claim 11 wherein at least one of the second plurality of elements is printed on the substrate.

20. The apparatus of claim 19 wherein all of the second plurality of elements are printed on the substrate.

21. A method comprising:

providing a printing substrate;

printing, on the printing substrate, each of;

a first plurality of elements as comprise a first semiconductor device; and

a second plurality of elements as comprise a second semiconductor device;

such that at least one element of the first plurality of elements also comprises one of the second plurality of elements.

22. The method of claim 21 wherein printing comprises at least one of:

screen printing;

offset printing;

gravure printing;

xerographic printing;

flexography printing;

inkjetting;

microdispensing;

stamping.

23. The method of claim 21 wherein the at least one element comprises a dielectric element.

24. The method of claim 21 wherein the at least one element comprises a bias electrode.

25. The method of claim 21 wherein the at least one element comprises a semiconductor element.